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In this paper, bottom-gate-top-contact structured thin-film transistors (TFTs) are fabricated by solution-processing of hafnium oxide (HfO2) dielectrics and zinc-indium-tin-oxide (ZITO) semiconductors. Solution-processed HfO2 films are annealed at different temperatures, and the 500℃ annealed HfO2 dielectrics can exhibit optimizing film properties such as smooth surfaces (the RMS value of HfO2 films is less than 1 nm), low leakage current density (1.25×10-7 A/cm2 at 1 MV/cm), high transmittance (above 80% at the wavelength ranging from 400 to 800 nm) and high relative dielectric constant (about 12). The smooth surface of HfO2 dielectrics is attributed to the decreased charge trapping states at the interface between the HfO2 dielectrics and ZITO semiconductors, and thus improves the device electrical performance and stability. Hence, TFT devices of HfO2 dielectrics annealed at 500℃ show a high saturated field effect mobility of more than 100 cm2·V-1·s-1 a low threshold voltage of -0.5 V, an on-to-off current ratio of 5×106 and a small subthreshold swing of 105 mV/dec. An almost negligible threshold voltage shift is observed under a positive bias stress for 1000 s, indicating the excellent stability of HfO2 TFT devices.
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Keywords:
- thin film transistor /
- hafnium oxide /
- zinc indium tin oxide /
- high mobility
[1] Tsay C Y, Cheng C H, Wang Y W 2012 Ceram. Int. 38 1677
[2] Lin W K, Liu K C, Chang S T, Li C S 2012 Thin Solid Films 520 3079
[3] Bobade S M, Shin J H, Cho Y J, You J S, Choi D K 2009 Appl. Surf. Sci. 255 7831
[4] Panda D, Tseng T Y 2013 Thin Solid Films 531 1
[5] Li X F, Xin E L, Zhang J H 2013 IEEE Trans. Electron Devices 60 3413
[6] Wu C H, Chang K M, Huang S H, Deng I C, Wu C J, Chiang W H, Chang C C 2012 IEEE Electron Device Lett. 33 552
[7] Gong Y P, Li A D, Qian X, Zhao C, Wu D 2009 J. Phys. D: Appl. Phys. 42 015405
[8] Son H, Kim J, Yang J, Cho D, Yi M 2011 Curr. Appl. Phys. 11 S135
[9] Khairnar A G, Mahajan A M 2013 Solid State Sci. 15 24
[10] Son D H, Kim D H, Sung S J, Jung E A, Kang J K 2010 Curr. Appl. Phys. 10 e157
[11] Kim M G, Kim H S, Ha Y G, He J, Kanatzidis M G, Facchetti A, Marks T J 2010 J. Am. Chem. Soc. 132 10352
[12] Pu H, Li H, Yang Z, Zhou Q, Dong C, Zhang Q 2013 ECS Solid State Lett. 2 N35
[13] Zhu L Y, Gao Y N, Li X F, Sun X W, Zhang J H 2014 J. Mater. Res. 29 1620
[14] Ma C Y, Wang W J, Wang J, Miao C Y, Li S L, Zhang Q Y 2013 Thin Solid Films 545 279
[15] Chen F H, Hung M N, YangJ F, Kuo S Y, Her J L, Matsuda Y H, Pan T M 2013 J. Phys. Chem. Sol. 74 570
[16] Lee C G, Dodabalapur A 2012 J. Electron. Mater. 41 895
[17] Gao Y N, Li X F, Zhang J H 2014 Acta Phys. Sin. 63 118502 (in Chinese) [高娅娜, 李喜峰, 张建华 2014 63 118502]
[18] Hsu C H, Yan S F 2011 J. Am. Ceram. Soc. 94 822
[19] Zhao Y P, Wang G C, Lu T M, Palasantzas G, De Hosson J Th M 1999 Phys. Rev. B 60 9157
[20] Son D H, Kim D H, Kim J H, Sung S J, Jung E A, Kang J K 2010 Electrochem. Solid-State Lett. 13 H274
[21] Li F M, Bayer B C, Hofmann S, Speakman S P, Ducati C, Milne W I, Flewitt A J 2013 Phys. Status Solidi B 250 957
[22] Park J H, Lee S J, Lee T I, Kim J H, Kim C H, Chae G S, Ham M H, Baik H K, Myoung J M 2013 J. Mater. Chem. C 1 1840
[23] Kamiya T, Nomura K, Hosono H 2010 Adv. Mater. 11 044305
[24] Xin E L, Li X F, Chen L L, Shi J F, Li C Y, Zhang J H 2012 Chin. J. Lumin. 33 1149 (in Chinese) [信恩龙, 李喜峰, 陈龙龙, 石继锋, 李春亚, 张建华 2012 发光学报 33 1149]
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[1] Tsay C Y, Cheng C H, Wang Y W 2012 Ceram. Int. 38 1677
[2] Lin W K, Liu K C, Chang S T, Li C S 2012 Thin Solid Films 520 3079
[3] Bobade S M, Shin J H, Cho Y J, You J S, Choi D K 2009 Appl. Surf. Sci. 255 7831
[4] Panda D, Tseng T Y 2013 Thin Solid Films 531 1
[5] Li X F, Xin E L, Zhang J H 2013 IEEE Trans. Electron Devices 60 3413
[6] Wu C H, Chang K M, Huang S H, Deng I C, Wu C J, Chiang W H, Chang C C 2012 IEEE Electron Device Lett. 33 552
[7] Gong Y P, Li A D, Qian X, Zhao C, Wu D 2009 J. Phys. D: Appl. Phys. 42 015405
[8] Son H, Kim J, Yang J, Cho D, Yi M 2011 Curr. Appl. Phys. 11 S135
[9] Khairnar A G, Mahajan A M 2013 Solid State Sci. 15 24
[10] Son D H, Kim D H, Sung S J, Jung E A, Kang J K 2010 Curr. Appl. Phys. 10 e157
[11] Kim M G, Kim H S, Ha Y G, He J, Kanatzidis M G, Facchetti A, Marks T J 2010 J. Am. Chem. Soc. 132 10352
[12] Pu H, Li H, Yang Z, Zhou Q, Dong C, Zhang Q 2013 ECS Solid State Lett. 2 N35
[13] Zhu L Y, Gao Y N, Li X F, Sun X W, Zhang J H 2014 J. Mater. Res. 29 1620
[14] Ma C Y, Wang W J, Wang J, Miao C Y, Li S L, Zhang Q Y 2013 Thin Solid Films 545 279
[15] Chen F H, Hung M N, YangJ F, Kuo S Y, Her J L, Matsuda Y H, Pan T M 2013 J. Phys. Chem. Sol. 74 570
[16] Lee C G, Dodabalapur A 2012 J. Electron. Mater. 41 895
[17] Gao Y N, Li X F, Zhang J H 2014 Acta Phys. Sin. 63 118502 (in Chinese) [高娅娜, 李喜峰, 张建华 2014 63 118502]
[18] Hsu C H, Yan S F 2011 J. Am. Ceram. Soc. 94 822
[19] Zhao Y P, Wang G C, Lu T M, Palasantzas G, De Hosson J Th M 1999 Phys. Rev. B 60 9157
[20] Son D H, Kim D H, Kim J H, Sung S J, Jung E A, Kang J K 2010 Electrochem. Solid-State Lett. 13 H274
[21] Li F M, Bayer B C, Hofmann S, Speakman S P, Ducati C, Milne W I, Flewitt A J 2013 Phys. Status Solidi B 250 957
[22] Park J H, Lee S J, Lee T I, Kim J H, Kim C H, Chae G S, Ham M H, Baik H K, Myoung J M 2013 J. Mater. Chem. C 1 1840
[23] Kamiya T, Nomura K, Hosono H 2010 Adv. Mater. 11 044305
[24] Xin E L, Li X F, Chen L L, Shi J F, Li C Y, Zhang J H 2012 Chin. J. Lumin. 33 1149 (in Chinese) [信恩龙, 李喜峰, 陈龙龙, 石继锋, 李春亚, 张建华 2012 发光学报 33 1149]
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