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Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm2/V ·s, threshold voltage of -2 V, and current on/off ratio of 104.
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Keywords:
- zinc tin oxide /
- thin-film transistors /
- field effect mobility
[1] Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣、 王智欣、 虞佳乐、 徐海红 2009 58 8566]
[2] Transactions on Electron Devices 54 2856
[3] Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Huang J Z, Song D D, Zhu H N, Huang J Y, Xu S 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才、 徐 征、 赵谡玲、 张福 [3] Gupta D, Anand M, Ryu S W, Choi Y K, Yoo S 2008 Appl. Phys. Lett. 93 224106
[4] Carcia P F, McLean R S, Reilly M H, Nunes G 2003 Appl. Phys. Lett. 82 1117
[5] Masuda S, Kitamura K, Okumura Y, Miyatake S, Tabata H, Kawai T 2003 J. Appl. Phys. 93 1624
[6] Oh M S, Han J I, Lee K, Lee B H, Sung M M, Im S 2010 Electrochemical and Solid-State Letters 13 194
[7] Avis C, Kim S H, Hur J H, Jang J, Milne W I 2009 Electrochemical and Solid-State Letters 12 93
[8] Zhang Q, Saraf L V, Hua F 2007 Nanotechnology 18 195204
[9] Sun J, Lu A X, Wang L P, Hu Y, Wan Q 2009 Nanotechnology 20 335204
[10] Lim W, Douglas E A, Lee J, Jang J H, Craciun V 2009 J. Vac. Sci. Technol. B 27 2128
[11] Paine D C, Yaglioglu B, Beiley Z, Lee S H 2008 Thin Solid Film. 516 5894
[12] Wu H Z, Liang J, Jin G F, Lao Y F, Xu T L 2007 IEEE
[13] Zhu X M, Wu H Z, Wang S J, Zhang Y Y, Cai C F, Si J X, Yuan Z J, Du X Y, Dong S R 2009 J. Semicond. 30 033001
[14] Cheng S H, Ling Z Y, Huang F 2002 Acta Phys. Sin. 51 668 (in Chinese) [程珊华、 宁兆元、 黄 峰 2002 51 668]
[15] Xu T N, Wu H Z, Zhang Y Y,Wang X,Zhu X M,Yuan Z J 2010 Acta Phys. Sin. 59 616 (in Chinese) [徐天宁、 吴惠桢、 张莹莹、 王 雄、 朱夏明、 原子健 2010 59 616]
[16] Chiang H Q, Wager J F, Hoffman R L, Jeong J, Keszler D A 2005 Appl. Phys. Lett. 86 013503
[17] Jackson W B, Hoffman R L, Herman G S 2005 Appl. Phys. Lett. 87 193503
[18] Grrn P, Hlzer P, Riedl T, Kowalsky W, Wang J, Weimann T, Hinze P, Kipp S 2007 Appl. Phys. Lett. 90 063502
[19] Han S Y, Lee D H, Herman G S, Chang C H 2009 J. Display Technology 5 520
[20] Chiang H Q, McFarlane B R, Hong D, Presley R E, Wager J F 2008 Journal of Non-Crystalline Solids 354 2826
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[1] Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣、 王智欣、 虞佳乐、 徐海红 2009 58 8566]
[2] Transactions on Electron Devices 54 2856
[3] Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Huang J Z, Song D D, Zhu H N, Huang J Y, Xu S 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才、 徐 征、 赵谡玲、 张福 [3] Gupta D, Anand M, Ryu S W, Choi Y K, Yoo S 2008 Appl. Phys. Lett. 93 224106
[4] Carcia P F, McLean R S, Reilly M H, Nunes G 2003 Appl. Phys. Lett. 82 1117
[5] Masuda S, Kitamura K, Okumura Y, Miyatake S, Tabata H, Kawai T 2003 J. Appl. Phys. 93 1624
[6] Oh M S, Han J I, Lee K, Lee B H, Sung M M, Im S 2010 Electrochemical and Solid-State Letters 13 194
[7] Avis C, Kim S H, Hur J H, Jang J, Milne W I 2009 Electrochemical and Solid-State Letters 12 93
[8] Zhang Q, Saraf L V, Hua F 2007 Nanotechnology 18 195204
[9] Sun J, Lu A X, Wang L P, Hu Y, Wan Q 2009 Nanotechnology 20 335204
[10] Lim W, Douglas E A, Lee J, Jang J H, Craciun V 2009 J. Vac. Sci. Technol. B 27 2128
[11] Paine D C, Yaglioglu B, Beiley Z, Lee S H 2008 Thin Solid Film. 516 5894
[12] Wu H Z, Liang J, Jin G F, Lao Y F, Xu T L 2007 IEEE
[13] Zhu X M, Wu H Z, Wang S J, Zhang Y Y, Cai C F, Si J X, Yuan Z J, Du X Y, Dong S R 2009 J. Semicond. 30 033001
[14] Cheng S H, Ling Z Y, Huang F 2002 Acta Phys. Sin. 51 668 (in Chinese) [程珊华、 宁兆元、 黄 峰 2002 51 668]
[15] Xu T N, Wu H Z, Zhang Y Y,Wang X,Zhu X M,Yuan Z J 2010 Acta Phys. Sin. 59 616 (in Chinese) [徐天宁、 吴惠桢、 张莹莹、 王 雄、 朱夏明、 原子健 2010 59 616]
[16] Chiang H Q, Wager J F, Hoffman R L, Jeong J, Keszler D A 2005 Appl. Phys. Lett. 86 013503
[17] Jackson W B, Hoffman R L, Herman G S 2005 Appl. Phys. Lett. 87 193503
[18] Grrn P, Hlzer P, Riedl T, Kowalsky W, Wang J, Weimann T, Hinze P, Kipp S 2007 Appl. Phys. Lett. 90 063502
[19] Han S Y, Lee D H, Herman G S, Chang C H 2009 J. Display Technology 5 520
[20] Chiang H Q, McFarlane B R, Hong D, Presley R E, Wager J F 2008 Journal of Non-Crystalline Solids 354 2826
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