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由于铟镓锌氧化物(IGZO) 薄膜具有高迁移率和高透过率的特点, 它作为有源层被广泛的应用于薄膜晶体管(TFT). 本文利用磁控溅射方法制备了TFT的有源层IGZO和源漏电极, 用简单低成本的掩膜法控制沟道的尺寸, 制备了具有高迁移率、底栅结构的n型非晶铟镓锌氧化物薄膜晶体管 (IGZO-TFT). 利用X 射线衍射仪(XRD) 和紫外可见光分光光度计分别测试了IGZO薄膜的衍射图谱和透过率图谱, 研究了IGZO薄膜的结构和光学特性. 通过测试IGZO-TFT的输出特性和转移特性曲线, 讨论了IGZO有源层厚度对IGZO-TFT特性的影响. 制备的IGZO-TFT器件的场效应迁移率高达15.6 cm2·V-1·s-1, 开关比高于107.Indium gallium zinc oxide (IGZO) is widely used in thin-film transistors (TFT) as an active layer due to its high mobility and transmittance. The amorphous n-type indium gallium zinc oxide thin-film transistors (IGZO-TFT) of bottom gate with high mobility were prepared, the active layer, source and drain electrode of the TFT were prepared by using magnetron sputtering method, and a low cost mask was used to control the size of the channel. The diffraction pattern and transmittance spectrum were measured by using X-ray diffraction and ultraviolet-visible spectrophotometer, respectively. The structural and optical properties of the IGZO thin film were studied. The dependence of active layer thickness on the performance was analyzed by testing the output characteristics and transfer property of IGZO-TFT. The field effect mobility of the IGZO-TFT reaches 15.6 cm2·V-1·s-1, and the on/off ratio is higher than 107.
[1] Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣, 王智欣, 虞佳乐, 徐海红 2009 58 8556]
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[8] Kamiya T, Nomura K, Hosono H 2010 Sci. Technol. Adv. Mater. 11 044305
[9] Wang X, Cai X K, Yan Z J Zhu X M, Qiu D J, Wu H Z 2011 Acta Phys. Sin. 60 037305 (in Chinese) [王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 60 037305]
[10] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488
[11] Barquinha P, Pimentel A, Marques A, Pereira L, Martins R, Fortunato E 2006 Journal of Non-Crystalline Solids 352 1749
[12] Wang Y, Sun X W, Goh G K L, Demir H V, Yu H Y 2011 IEEE Trans. Electron Device 58 480
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[15] Greve D W 1998 Field Effect Devices and Applications: Devices for Portable Low Power, and Imaging Systems (1st Edn.) (Englewood Cliffs NJ: Prentice-Hall ) p287288
[16] Chiang H Q 2007 Ph. D. Dissertation (Corvallis: Oregon State University)
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[1] Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣, 王智欣, 虞佳乐, 徐海红 2009 58 8556]
[2] Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Huang J Z, Song D D, Zhu H N, Huang J Y, Xu S R 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才, 徐征, 赵谡玲, 张福俊, 姜薇薇, 黄金昭, 宋丹丹, 朱海娜, 黄金英, 徐叙瑢 2008 57 5911]
[3] Xu T Y, Wu H Z, Zhang Y Y, Wang X, Zhu X M, Yan Z J 2010 Acta Phys. Sin. 59 5018 (in Chinese) [徐天宇, 吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健 2010 59 5018]
[4] Zhang L, Li J, Zhang X W, Jiang X Y, Zhang Z L 2009 Appl. Phys. Lett. 95 072112
[5] Dehuff N L, Kettenring E S, Hong D, Chiang H Q, Wager J F 2005 J. Appl. Phys. 97 064505
[6] Yabuta H, Sano M, Abe K, Aiba T, Den T, Kumomi H, Nomura K, Kamiya T, Hosono H 2006 Appl. Phys. Lett. 89 112123
[7] Chiang H Q, Wager J F, Hoffman R L, Jeong J, Keszler D A 2005 Appl. Phys. Lett. 86 013503
[8] Kamiya T, Nomura K, Hosono H 2010 Sci. Technol. Adv. Mater. 11 044305
[9] Wang X, Cai X K, Yan Z J Zhu X M, Qiu D J, Wu H Z 2011 Acta Phys. Sin. 60 037305 (in Chinese) [王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 60 037305]
[10] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488
[11] Barquinha P, Pimentel A, Marques A, Pereira L, Martins R, Fortunato E 2006 Journal of Non-Crystalline Solids 352 1749
[12] Wang Y, Sun X W, Goh G K L, Demir H V, Yu H Y 2011 IEEE Trans. Electron Device 58 480
[13] Li C S, Li Y N, Wu Y L, Ong B S, Loutfy R O 2009 J. Mater. Chem. 19 1626
[14] Martin S, Chiang C S, Nahm J Y, Li T, Kanicki J, Ugai Y 2001 Jpn. J. Appl. Phys. 40 530
[15] Greve D W 1998 Field Effect Devices and Applications: Devices for Portable Low Power, and Imaging Systems (1st Edn.) (Englewood Cliffs NJ: Prentice-Hall ) p287288
[16] Chiang H Q 2007 Ph. D. Dissertation (Corvallis: Oregon State University)
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