基于栅绝缘层表面修饰的有机场效应晶体管迁移率的研究进展

石巍巍; 李雯; 仪明东; 解令海; 韦玮; 黄维

doi:10.7498/aps.61.228502

摘要

栅绝缘层的表面性质对有机场效应晶体管(OFETs)的半导体薄膜的形貌、晶粒生长的有序性和载流子的传输有着重大的影响.研究表明, 通过改进栅绝缘层的表面性质, 可以有效提高有机场效应晶体管的迁移率. 本文综述了OFETs绝缘层表面的粗糙度和表面能对OFETs迁移率的影响, 重点探讨了栅绝缘层表面修饰常用的方法, 即自组装单层(SAMs)修饰和聚合物修饰与迁移率改进之间的研究进展.最后, 展望了该研究方向未来可能的发展趋势.

关键词:

Abstract

The surface property of the dielectric has a significant influence on growth, morphology, order of the organic semiconductor, and charge carrier transport. The relevant research shows that the mobility of organic field-effect transistor could be effectively improved via ameliorating the surface property of the dielectric. The purpose of this review is to introduce the main factors, including the roughness and the surface energy of dielectric, which exert a tremendous influence on the field effect mobility of OFET, and chiefly describe the progress of the two common methods used for the dielectric modification, viz., the self-assembled monolayer modification and the polymer modification. Finally, the novel applications at present are summarized in this review and some perspectives on the research trend are proposed.

Keywords:

作者及机构信息

1.
南京邮电大学信息材料与纳米技术研究院, 有机电子与信息显示国家重点实验室培育基地, 南京 210046;

2.
南京邮电大学信息材料与光电工程学院, 南京 210046

基金项目: 国家重点基础研究发展计划(批准号: 2009CB930600, 2012CB933301, 2012CB723402)、国家自然科学基金(批准号: 61077070, 21144004, 60977023)、教育部博士点基金(批准号: 20113223120003)、江苏省自然科学基金(批准号: BK2011761, SBK201122680)、江苏省高校自然科学基础研究面上项目(批准号: 11KJB510017)、南京邮电大学人才科研启动基金(批准号: NY211022, NY210002, NY210030) 和江苏省高校优秀科技创新团队(批准号: TJ209035).

Authors and contacts

1.
Key Laboratory for Organic Electronics & Information Diaplays and Institute of Advanced Materials, Nanjing 210046, China;

2.
Institute of Optoelectronics Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China

Funds: Project supported by the National Basic Research Program of China (Grants Nos. 2009CB930600, 2012CB933301, 2012CB723402), the National Natural Science Foundation of China (Grant Nos. 61077070, 21144004, 60977023), the Key Project of Chinese Ministry of Education, China (Grant No. 20113223120003 ), the NSF of Jiangsu Province, China (Grants Nos. BK2011761, SBK201122680), the NSF of the Education Committee of Jiangsu Province, China (Grant No. 11KJB510017), NJUPT (Grants Nos. NY211022, NY210002, NY210030), and the Creative Research Group of Jiangsu College Council (Grant No TJ209035).

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施引文献

[1]	Veres J, Ogier S, Lloyd G, de Leeuw D 2004 Chem. Mater. 16 4543
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[3]	Savage R C, Mativetsky J M, Orgiu E, Palma M, Gbabode G, Geerts Y H, Samori P 2011 J. Mater. Chem. 21 206
[4]	Yoon M H, Kim C, Facchetti A, Marks T J 2006 J. Am. Chem. Soc. 128 12851
[5]	Shekar B C, Lee J Y, Rhee S W 2004 Korean J. Chem. Eng. 21 267
[6]	Chung Y Y, Verploegen E, Vailionis A, Sun Y, Nishi Y, Murmann B, Bao Z A 2011 Nano Lett. 11 1161
[7]	Katsuta S, Miyagi D, Yamada H, Okujima T, Mori S, Nakayama K, Uno H 2011 Org. Lett. 13 1454
[8]	Kim S H, Hong K, Jang M, Jang J, Anthony J E, Yang H, Park C E 2010 Adv. Mater. 22 4809
[9]	Liao K C, Ismail A G, Kreplak L, Schwartz J, Hill I G 2010 Adv. Mater. 22 3081
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[12]	DiBenedetto S A, Facchetti A, Ratner M A, Marks T J 2009 Adv. Mater. 21 1407
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[71]	Kim C, Facchetti A, Marks T J 2007 Science 318 76
[72]	Kim S H, Jang M, Yang H, Park C E 2010 J. Mater. Chem. 20 5612
[73]	Sun X, Zhang L, Di C-a, Wen Y, Guo Y, Zhao Y, Yu G, Liu Y 2011 Adv. Mater. 1
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[75]	Lu Y X, Lee W H, Lee H S, Jang Y, Cho K 2009 Appl. Phys. Lett. 94 113303
[76]	Hwang D K, Kim C S, Choi J M, Lee K, Park J H, Kim E, Baik H K, Kim J H, Im S 2006 Adv. Mater. 18 2299
[77]	Gelinck G H, Huitema H E A, Van Veenendaal E, Cantatore E, Schrijnemakers L, Van der Putten J, Geuns T C T, Beenhakkers M, Giesbers J B, Huisman B H, Meijer E J, Benito E M, Touwslager F J, Marsman A W, Van Rens B J E, De Leeuw D M 2004 Nat. Mater. 3 106
[78]	McCarthy M A, Liu B, Donoghue E P, Kravchenko I, Kim D Y, So F, Rinzler A G 2011 Science 332 570
[79]	Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3051
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[82]	Dutta S, Lewis S D, Dodabalapur A 2011 Appl. Phys. Lett. 98 213504
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[84]	Tobjörk Dösterbacka R 2011 Adv. Mater. 23 1961
[85]	Kim S JLee J S 2010 Nano Lett. 10 2884
[86]	Leong W L, Mathews N, Tan B, Vaidyanathan S, Dotz F, Mhaisalkar S 2011 J. Mater. Chem. 21 5203

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