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Hafnium indium zinc oxide (HIZO) thin film transistors with zirconium aluminum oxide (AZO) gate dielectric were fabricated by solution-process. The HIZO and AZO oxide thin films have smooth surfaces with root-mean-square roughness of 0.62 nm and 0.35 nm respectively. The thin film transistor with channel length = 6 μm and the ratio of width/length =5 exhibits a high saturation field-effect mobility of 21.3 cm2/V·s, a low threshold voltage of 0.3 V, a high on-off ratio of 4.3×107 and a small subthreshold swing of 0.32 V/dec. And these properties of TFT may be impacted by highly-coherent and low trapping states interface between the AZO dielectric and HIZO semiconductors.
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Keywords:
- thin film transistor /
- zirconium aluminum oxide /
- mobility
[1] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488
[2] Park J C, Kim S, Kim S, Kim C, Song I, Park Y, Jung U I, Kim D H, Lee J S 2010 Adv. Mater. 22 5512
[3] Park J S, Maeng W J, Kim H S, Park J S 2012 Thin Solid Films 520 1679
[4] Li X, Li Q, Zhang J H 2013 J. Sol-Gel Sci. Technol. 66 497
[5] Zhang B, Liu Y, Agarwal S, Yeh M-L, Katz H E 2011 ACS Appl. Mater. Interfaces 3 4254
[6] Gao Bo X, Qiu Xia X 2009 Chin. Phys. B 18 768
[7] Lee I K, Lee S W, Gu J g, Kim K S, Cho W J 2013 Jpn. J. Appl. Phys. 52 06GE05
[8] Li X F, Xin E L, Zhang J H 2013 IEEE Trans. Electron Devices 60 3413
[9] Adamopoulos G, Thomas S, Bradley D D C, McLachlan M A, Anthopoulos T D 2011 Appl. Phys. Lett. 98 123503
[10] Ji Bin F, Hong Xia L, Fei M, Qing Qing Z, Yue H 2013 Chin. Phys. B 22 027702
[11] Fortunato E, Barquinha P, Martins R 2012 Adv. Mater. 24 2945
[12] Pei Z, Pereira L, ç G, Barquinha P, Franco N, Alves E, Rego A, Martins R, Fortunato E 2009 Electrochem. Solid-State Lett. 12 G65
[13] Robertson J 2004 Eur. Phys. J. Appl. Phys. 28 265
[14] Jeong W H, Kim G H, Shin H S, Du Ahn B, Kim H J, Ryu M K, Park K B, Seon J B, Lee S Y 2010 Appl. Phys. Lett. 96 093503
[15] Park J H, Yoo Y B, Lee K H, Jang W S, Oh J Y, Chae S S, Baik H K 2013 ACS Appl. Mater. Interfaces 5 410
[16] Kim G H, Shin H S, Du Ahn B, Kim K H, Park W J, Kim H J 2009 J. Electrochem. Soc. 156 H7
[17] Wang X C, Yuan Z J, Zhu X M, Qiu D J, Wu H Z Acta Phys. Sin. 60 037305 in Chinese 2011 60 037305 (in Chinese) [王雄才, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 60 037305]
[18] Lee C G, Dodarbalapur A 2012 J. Electron. Mater. 41 895
[19] Zhang L, Li J, Zhang X W, Jiang X Y, Zhang Z L 2009 Appl. Phys. Lett. 95 072112
[20] Peng J, Sun Q, Wang S, Wang H Q, Ma W 2013 Appl. Phys. Lett. 103 061603
[21] Jang K, Raja J, Kim J, Park C, Lee Y J, Yang J, Kim H, Yi J 2013 Semicond. Sci. Technol. 28 085015
[22] Heo Y W, Cho K M, Sun S Y, Kim S Y, Lee J H, Kim J J, Norton D, Pearton S 2011 J. Vac. Sci. Technol. B 29 021203
[23] Yang W, Song K, Jeong Y, Jeong S, Moon J 2013 J. Mater. Chem. C 1 4275
[24] Li X F, Xin E L, Shi J F, Chen L L, Li C Y, Zhang J H Acta Phys. Sin. 62 108503 in Chinese 2013 62 108503 (in Chinese) [李喜峰, 信恩龙, 石继锋, 陈龙龙, 李春亚, 张建华 2013 62 108503]
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[1] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488
[2] Park J C, Kim S, Kim S, Kim C, Song I, Park Y, Jung U I, Kim D H, Lee J S 2010 Adv. Mater. 22 5512
[3] Park J S, Maeng W J, Kim H S, Park J S 2012 Thin Solid Films 520 1679
[4] Li X, Li Q, Zhang J H 2013 J. Sol-Gel Sci. Technol. 66 497
[5] Zhang B, Liu Y, Agarwal S, Yeh M-L, Katz H E 2011 ACS Appl. Mater. Interfaces 3 4254
[6] Gao Bo X, Qiu Xia X 2009 Chin. Phys. B 18 768
[7] Lee I K, Lee S W, Gu J g, Kim K S, Cho W J 2013 Jpn. J. Appl. Phys. 52 06GE05
[8] Li X F, Xin E L, Zhang J H 2013 IEEE Trans. Electron Devices 60 3413
[9] Adamopoulos G, Thomas S, Bradley D D C, McLachlan M A, Anthopoulos T D 2011 Appl. Phys. Lett. 98 123503
[10] Ji Bin F, Hong Xia L, Fei M, Qing Qing Z, Yue H 2013 Chin. Phys. B 22 027702
[11] Fortunato E, Barquinha P, Martins R 2012 Adv. Mater. 24 2945
[12] Pei Z, Pereira L, ç G, Barquinha P, Franco N, Alves E, Rego A, Martins R, Fortunato E 2009 Electrochem. Solid-State Lett. 12 G65
[13] Robertson J 2004 Eur. Phys. J. Appl. Phys. 28 265
[14] Jeong W H, Kim G H, Shin H S, Du Ahn B, Kim H J, Ryu M K, Park K B, Seon J B, Lee S Y 2010 Appl. Phys. Lett. 96 093503
[15] Park J H, Yoo Y B, Lee K H, Jang W S, Oh J Y, Chae S S, Baik H K 2013 ACS Appl. Mater. Interfaces 5 410
[16] Kim G H, Shin H S, Du Ahn B, Kim K H, Park W J, Kim H J 2009 J. Electrochem. Soc. 156 H7
[17] Wang X C, Yuan Z J, Zhu X M, Qiu D J, Wu H Z Acta Phys. Sin. 60 037305 in Chinese 2011 60 037305 (in Chinese) [王雄才, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 60 037305]
[18] Lee C G, Dodarbalapur A 2012 J. Electron. Mater. 41 895
[19] Zhang L, Li J, Zhang X W, Jiang X Y, Zhang Z L 2009 Appl. Phys. Lett. 95 072112
[20] Peng J, Sun Q, Wang S, Wang H Q, Ma W 2013 Appl. Phys. Lett. 103 061603
[21] Jang K, Raja J, Kim J, Park C, Lee Y J, Yang J, Kim H, Yi J 2013 Semicond. Sci. Technol. 28 085015
[22] Heo Y W, Cho K M, Sun S Y, Kim S Y, Lee J H, Kim J J, Norton D, Pearton S 2011 J. Vac. Sci. Technol. B 29 021203
[23] Yang W, Song K, Jeong Y, Jeong S, Moon J 2013 J. Mater. Chem. C 1 4275
[24] Li X F, Xin E L, Shi J F, Chen L L, Li C Y, Zhang J H Acta Phys. Sin. 62 108503 in Chinese 2013 62 108503 (in Chinese) [李喜峰, 信恩龙, 石继锋, 陈龙龙, 李春亚, 张建华 2013 62 108503]
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