Inkjet printing high mobility indium-zinc-tin oxide thin film transistor

Zhao Ze-Xian; Xu Meng; Peng Cong; Zhang Han; Chen Long-Long; Zhang Jian-Hua; Li Xi-Feng

doi:10.7498/aps.73.20240361

Abstract

Metal oxide thin film transistor has been widely used in flat panel display industry because of its low leakage current, high mobility and large area uniformity. Besides, with the development of printed display technology, inkjet printing process can fabricate the customizable patterns on diverse substrates with no need of vacuum or lithography to be used, thus significantly reducing cost and receiving more and more attention. In this paper, we use inkjet printing technology to prepare a bottom gate bottom contact thin film transistor (TFT) by using indium-zinc-tin-oxide (IZTO) semiconductor. The surface morphology of the printed IZTO film is modified by adjusting the solvent composition and solute concentration of the printing precursor ink. The experimental result show that the use of binary solvents can effectively overcome the coffee ring shape caused by the accumulation of solute edge in the volatilization process of a single solvent, ultimately presenting a uniform and flat contour surface. Further increase in solute concentration is in favor of formation of convex surface topology. The reason for the formation of the flat surface of the oxide film is the balance between the inward Marangoni reflux of the solute and the outward capillary flow during volatilization. In addition, IZTO thin film transistor printed with binary solvents exhibits excellent electrical properties. The ratio of width/length = 50/30 exhibits a high on-off ratio of 1.21×10⁹, a high saturation field-effect mobility is 16.6 cm²/(V·s), a low threshold voltage is 0.84 V, and subthreshold swing is 0.24 V/dec. The uniform and flat active layer thin film pattern can form good contact with the source leakage electrode, and the contact resistances of TFT devices with different width-to-length ratios are less than 1000 Ω, which can reach the basic conditions of high mobility thin film transistors prepared by inkjet printing. Therefore, using solvent mixture provides a universal and simple way to print oxide films with required surface topology, and present a visible path for inkjet printing of high-mobility thin film transistors.

Keywords:

Authors and contacts

1.
School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
2.
Key Laboratory of Advanced Display and System Application of Ministry of Education, Shanghai University, Shanghai 200072, China

Corresponding author: Li Xi-Feng, lixifeng@shu.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3603805).

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References

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图 1 IZTO TFT器件的光学显微镜图像, 插图显示截面示意图

Figure 1. Microscope images of the IZTO TFT device, where the inset shows the schematic cross section.

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图 2 IZTO前驱体墨水的热重曲线(实线)和热重微分曲线(虚线)

Figure 2. The TGA curve (solid lines) and DTG curve (dotted lines) of IZTO precursor ink.

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图 3 不同溶剂、不同浓度下的IZTO薄膜的表面轮廓图

Figure 3. Surface profiles of IZTO films with different solvents and concentrations.

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图 4 印刷薄膜的凝胶化过程机理

Figure 4. Mechanism about gelation process of the printing film.

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图 5 (a) 单溶剂和(b)二元溶剂制备IZTO薄膜的O 1s峰的XPS光谱

Figure 5. XPS spectra of O 1s peaks of IZTO films prepared with (a) single solvent and (b) binary solvents.

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图 6 IZTO TFT器件转移特性曲线

Figure 6. Transfer characteristic curves of IZTO TFT devices.

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图 7 IZTO TFT器件的(a), (b)输出与(c), (d)转移曲线　(a), (c)凸状轮廓; (b), (d)平坦轮廓

Figure 7. (a), (b) Output and (c), (d) transfer curves of IZTO TFT device: (a), (c) Convex profile and (b), (d) uniform flat profile.

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图 8 喷墨打印10个IZTO TFT器件的转移特性曲线汇总图

Figure 8. Summary of transfer characteristic curves of 10 IZTO TFT devices fabricated by inkjet printing.

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图 9 不同沟道宽长比的IZTO TFT器件的转移特性曲线

Figure 9. Transfer characteristic curves of IZTO TFT devices with different aspect ratios.

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图 10 沟道长度为10—30 μm时IZTO TFT 获得的总电阻与沟道长度(R_T-L)图

Figure 10. Total resistance vs. channel length (R_T-L) plots obtained from IZTO TFTs with a channel length of 10–30 μm.

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表 1 不同浓度、溶剂下对应的IZTO墨水的物理参数

Table 1. Structural parameters of IZTO ink of different concentration and solvents.

IZTO墨水样品	ρ/(g·cm^–3)	η/cP	γ/(mN·m^–1)	Z
c = 0.2 mol/L, 2-MOE	1.04	4.05	34.4	6.59
c = 0.2 mol/L, 2-MOE+EG	1.07	6.90	38.1	4.14
c = 0.4 mol/L, 2-MOE+EG	1.10	8.44	39.1	3.48

DownLoad: CSV

表 2 喷墨打印法制备TFT器件的性能对比

Table 2. Performance comparison of TFT devices prepared by inkjet printing method.

成膜方式	μ_sat/(cm²·V^–1·s^–1)	V_TH/V	S.S/(V·dec^–1)	I_on/I_off	关态电流/A	文献
喷墨打印	4.63	–1.44	0.18	>10⁷	<10^–12	[8]
喷墨打印	1.3	0.14	0.44	2.3×104	<10^–9	[10]
喷墨打印	4.6	0.9	—	>10⁵	1×10^–10	[28]
喷墨打印	3.0	–0.51	0.21	1.59×10⁷	5×10^–13	[29]
磁控溅射	13.6	1.04	0.18	5.65×10⁶	2×10^–12	[30]
喷墨打印	16.6	0.84	0.24	1.21×10⁹	≤10^–13	本文

DownLoad: CSV

表 3 喷墨打印IZTO TFT的电性能参数平均值

Table 3. Average electrical performance parameters of inkjet printed IZTO TFT.

	μ/(cm²·V^–1·s^–1)	V_TH/V	S.S/(mV·dec^–1)
Average value	11 ± 2	0.6 ± 0.15	90 ± 15

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表 4 不同沟道宽长比的IZTO为有源层TFT器件性能对比

Table 4. Structural parameters of IZTO TFT devices with different aspect ratios.

W/L	μ_sat/ (cm²·V^–1·s^–1)	V_TH/ V	S.S/(V·dec^–1)	I_on/I_off
50/30	16.6	0.84	0.24	1.21×10⁹
50/20	14.9	0.73	0.15	2.79×10⁹
50/10	11.5	0.57	0.10	3.74×10⁹

DownLoad: CSV

map

[1]	荆斌, 徐萌, 彭聪, 陈龙龙, 张建华, 李喜峰 2022 71 138502 Google Scholar Jing B, Xu M, Peng C, Chen L L, Zhang J H, Li X F 2022 Acta Phys. Sin. 71 138502 Google Scholar
[2]	Chu S, Hollberg L, Bjorkholm J E, Bolot S, Fuchs P, Knobelspies S, Temel O, Sevilla G T, Gilshtein E, Andres C, Shorubalko I, Liu Y, Troester G, Tiwari A A N, Romanyuk Y E 2019 Adv. Electron. Mater. 5 1800843 Google Scholar
[3]	Song O, Rhee D, Kim J, Jeon Y, Mazánek V, Söll A, Kwon Y A, Cho J H, Kim Y H, Kang J, Sofer Z 2022 npj 2D Mater. Appl. 6 64 Google Scholar
[4]	Liang K, Li D W, Ren H H, Zhao M M, Wang H, Ding M F, Xu G W, Zhao X L, Long S B, Zhu S Y, Sheng P, Li W B, Lin X, Zhu B W 2021 Nano-Micro Lett. 13 164 Google Scholar
[5]	Kwon J, Baek S, Lee Y, Tokito S, Jung S 2021 Langmuir 37 10692 Google Scholar
[6]	Deegan R D, Bakajin O, Dupont T F, Huber G, Nagel S R, Witten T A 1997 Nature 389 827 Google Scholar
[7]	兰林峰, 陈宝中, 彭俊彪, 曹镛 2021 高分子材料科学与工程 37 150 Google Scholar Lan L F, Chen B Z, Peng J B, Cao Y 2021 Polym. Mater. Sci. Eng. 37 150 Google Scholar
[8]	Li Y Z, Lan L F, Gao P, He P H, Dai X, Cao H, Liang L, Peng J B 2019 IEEE Electron Device Lett. 40 228 Google Scholar
[9]	Ryu S O, Ha C H, Jun H Y, Ryu S O 2020 J. Electron. Mater. 49 2003 Google Scholar
[10]	Gillan L, Li S, Lahtinen J, Chang C H, Alastalo A, Leppäniemi J 2021 Adv. Mater. Interfaces 8 2100728 Google Scholar
[11]	Matavz A, Ursic U, Mocivnik J, Richter D, Humar M, Copar S, Malic B, Bobnar V 2022 J. Colloid Interface Sci. 608 1718 Google Scholar
[12]	Sun D W, Chen C H, Zhang J, Wu X M, Chen H P, Guo T L 2018 Appl. Phys. Lett. 112 012102 Google Scholar
[13]	Zhu Z N, Zhang J H, Zhou Z W, Ning H L, Cai W, Wei J L, Zhou S X, Yao R H, Lu X B, Peng J B A 2019 ACS Appl. Mater. Interfaces 11 5193 Google Scholar
[14]	Zhu Z N, Ning H L, Cai W, Wei J L, Zhou S X, Yao R H, Lu X B, Zhang J H, Zhou Z W, Peng J B A 2018 Langmuir 34 6413 Google Scholar
[15]	Still T, Yunker P J, Yodh A G 2012 Langmuir 28 4984 Google Scholar
[16]	Hu H L, Zhu J G, Chen M S, Guo T L, Li F S 2018 Appl. Surf. Sci. 441 295 Google Scholar
[17]	Zhong X, Duan F 2016 Eur. Phys. J. B 39 18 Google Scholar
[18]	Oh G, Jeong W, Jung N, Kang S H, Weon B M 2022 Phys. Rev. Appl. 17 024010 Google Scholar
[19]	Kim D, Jeong S, Park B K, Moon J 2006 Appl. Phys. Lett. 89 264101 Google Scholar
[20]	Kim M G, Kim H S, Ha Y G, He J Q, Kanatzidis M G, Facchetti A, Marks T J 2010 J. Am. Chem. Soc. 132 10352 Google Scholar
[21]	朱乐永, 高娅娜, 李喜峰, 张建华 2015 64 168501 Google Scholar Zhu L Y, Gao Y N, Zhang J H, Li X F 2015 Acta Phys. Sin. 64 168501 Google Scholar
[22]	Choi S, Kim K T, Park S K, Kim Y H 2019 Materials 12 852 Google Scholar
[23]	Friederich A, Binder J R, Bauer W 2013 J. Am. Ceram. Soc. 96 2093 Google Scholar
[24]	Ishizuka H, Fukai J 2018 Exp. Fluids 59 4 Google Scholar
[25]	Li Y Z, He P H, Chen S T, Lan L F, Dai X Q, Peng J B 2019 ACS Appl. Mater. Interfaces 11 28052 Google Scholar
[26]	Park J, Moon J 2006 Langmuir 22 3506 Google Scholar
[27]	Huang H, Hu H L, Zhu J G, Guo T L 2017 J. Electron. Mater. 46 4497 Google Scholar
[28]	陶洪, 罗浩德, 宁洪龙, 姚日晖, 蔡炜, 郑喜凤, 汪洋, 王铂, 曹慧, 彭俊彪 2021 液晶与显示 36 663 Google Scholar Tao H, Luo H D, Ning H L, Yao R H, Cai W, Zheng X F, Wang Y, Wang B, Cao H, Peng, J B 2021 Chin. J. Liq. Cryst. Disp. 36 663 Google Scholar
[29]	Chen S T, Li Y Z, Lin Y L, He P H, Long T, Deng C H, Chen Z, Chen G S, Tao H, Lan L F, Peng J B 2020 Coatings 10 425 Google Scholar
[30]	Fan C L, Hsin T C, Yu X W, Lin Z C 2024 Mater. Sci. Semicond. Process. 172 1396 Google Scholar
[31]	Weber C, Oberberg M, Weber D, Bock C, Pham D V, Kunze U 2014 Adv. Mater. Interfaces 1 1400137 Google Scholar
[32]	林奕龙, 陈思婷, 吴永波, 兰林锋, 彭俊彪 2021 液晶与显示 36 1239 Google Scholar Lin Y L, Chen S T, Wu Y B, Lan L F, Peng J B A 2021 Chin. J. Liq. Cryst. Disp. 36 1239 Google Scholar

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