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Properties of low-frequency noise in the amorphous InZnO thin film transistors have been investigated in this paper. Due to the emission and trapping processes of carriers between trapping states located in the interface between the IZO layer and gate insulator, the drain current spectral density shows a 1/fγ(γ =0.75) low-frequency noise behavior. In addition, the normalized drain current spectral density is decreased linearly with the increase of gate length and width. This property confirms that the low-frequency noise in the IZO TFTs is due to the flicker noise in the channel, the contribution of source/drain contact and parasitic resistances can be ignored. Finally, based on the number fluctuation theory and the mobility fluctuation theory, the γ and average Hooge's parameters have been extracted to estimate the quality of devices and materials.
[1] Lan L, Xiong N, Xiao P, Li M, Xu H, Yao R, Wen S, Peng J 2013 Appl. Phys Lett. 102 242102
[2] Zhang G M, Guo L Q, Zhao K S, Yan Z H 2013 Acta Phys. Sin. 62 137201 (in Chinese)[张耕铭, 郭立强, 赵孔胜, 颜钟惠 2013 62 137201]
[3] Huang Y C, Liu D F, Liang J S, Gong H M 2005 Acta Phys. Sin. 54 2261 (in Chinese)[黄杨程, 刘大福, 梁晋穗等 2005 54 2261]
[4] Fung T C, Baek G, Kanicki J 2010 J. Appl. Phys. 108 074518
[5] Kim S, Jeon Y, Lee J H, Ahn B D, Park S Y, Park J H, Kim J H, Park J, Kim D M, Kim D H 2010 IEEE Electron Device Lett. 31 1236
[6] Lee J M, Cheong W S, Hwang C S, Cho I T, Kwon H I, Lee J H 2009 IEEE Electron Device Lett. 30 505
[7] Choi H S, Jeon S, Kim H, Shin J, Kim C, Chung U I 2011 IEEE Electron Device Lett. 32 1083
[8] 9812B noise analyzer user's manual. 2008 (ProPlus Design Solutions, Inc.)
[9] Vandamme L K J, Hooge 2008 IEEE Trans. Electron Device 55 3070
[10] Dimitriadis C A, Brini J, Lee J I, Farmakis F V, Kamarinos 1999 J. Appl. Phys. 85 3934
[11] Hooge F N 1994 IEEE Trans. Electron Device 41 1926
[12] Rigaud D, Valenza M, Rhayem J 2002 IEE Proc. Circuits Devices Syst. 149 75
[13] Ghibaudo G, Roux O, Nguyen-Duc C, Balestra F, Brini J 1991 Phys. Status Solidi A 124 571
[14] Ioannidis E G, Tsormpatzoglou A, Tassis D H, Dimitriadis, Templier F, Kamarinos G 2010 J. Appl. Phys. 108 106103
[15] Vandamme L K J, Hooge F N 2008 IEEE Trans. Electron Device 55 3070
[16] Mercha A, Pichon L, Carin R, Mourgues K, Bonnaud O 2001 Thin Solid Films 383 303
[17] Rhayem J, Rigaud D, Valenza M, Szydlo, Lebrun H 2000 J. Appl. Phys. 87 1983
[18] Vandamme L K J, Feyaerts R, Trefan G, Detcheverry C 2002 J. Appl. Phys. 91 719
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[1] Lan L, Xiong N, Xiao P, Li M, Xu H, Yao R, Wen S, Peng J 2013 Appl. Phys Lett. 102 242102
[2] Zhang G M, Guo L Q, Zhao K S, Yan Z H 2013 Acta Phys. Sin. 62 137201 (in Chinese)[张耕铭, 郭立强, 赵孔胜, 颜钟惠 2013 62 137201]
[3] Huang Y C, Liu D F, Liang J S, Gong H M 2005 Acta Phys. Sin. 54 2261 (in Chinese)[黄杨程, 刘大福, 梁晋穗等 2005 54 2261]
[4] Fung T C, Baek G, Kanicki J 2010 J. Appl. Phys. 108 074518
[5] Kim S, Jeon Y, Lee J H, Ahn B D, Park S Y, Park J H, Kim J H, Park J, Kim D M, Kim D H 2010 IEEE Electron Device Lett. 31 1236
[6] Lee J M, Cheong W S, Hwang C S, Cho I T, Kwon H I, Lee J H 2009 IEEE Electron Device Lett. 30 505
[7] Choi H S, Jeon S, Kim H, Shin J, Kim C, Chung U I 2011 IEEE Electron Device Lett. 32 1083
[8] 9812B noise analyzer user's manual. 2008 (ProPlus Design Solutions, Inc.)
[9] Vandamme L K J, Hooge 2008 IEEE Trans. Electron Device 55 3070
[10] Dimitriadis C A, Brini J, Lee J I, Farmakis F V, Kamarinos 1999 J. Appl. Phys. 85 3934
[11] Hooge F N 1994 IEEE Trans. Electron Device 41 1926
[12] Rigaud D, Valenza M, Rhayem J 2002 IEE Proc. Circuits Devices Syst. 149 75
[13] Ghibaudo G, Roux O, Nguyen-Duc C, Balestra F, Brini J 1991 Phys. Status Solidi A 124 571
[14] Ioannidis E G, Tsormpatzoglou A, Tassis D H, Dimitriadis, Templier F, Kamarinos G 2010 J. Appl. Phys. 108 106103
[15] Vandamme L K J, Hooge F N 2008 IEEE Trans. Electron Device 55 3070
[16] Mercha A, Pichon L, Carin R, Mourgues K, Bonnaud O 2001 Thin Solid Films 383 303
[17] Rhayem J, Rigaud D, Valenza M, Szydlo, Lebrun H 2000 J. Appl. Phys. 87 1983
[18] Vandamme L K J, Feyaerts R, Trefan G, Detcheverry C 2002 J. Appl. Phys. 91 719
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