Research on least-squares fitting calculation of the field-effect mobility

Chen Yue-Ning; Xu Zheng; Zhao Su-Ling; Sun Qin-Jun; Yin Fei-Fei; Dong Yu-Hang

doi:10.7498/aps.59.8113

Abstract

In this article,organic thin-film transistors (OTFTs) with top-gate and bottom contact geometry based on pentacene as active layer were fabricated. The experimental data of the I-V were obtained from the organic thin-film transistors. The field-effect mobility of the OTFT was calculated by fitting of theoretical calculation to the experimental data. We find that field-effect mobility values have great difference by different fitting methods. We calculate the field-effect mobility by least-squares fitting method to the experimental data of the I-V away from the center of the linear region of the transfer characteristics curves 1/2 range. The inherent inaccuracy of other fitting method can be reduced. The results is the nearest field-effect mobility obtained with other methods.

Keywords:

Authors and contacts

(1)Institute of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information(Beijing Jiaotong University),Ministry of Education,Beijing 100044,China; (2)Institute of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information(Beijing Jiaotong University),Ministry of Education,Beijing 100044,China;Physics Department,Liaoning University,Shenyang 110036,China; (3)Physics Department,Liaoning University,Shenyang 110036,China

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Cited By

[1]	Han S H,Kim J H,Janga J,Cho S M,Oh M H,Le S H,Choo D J 2006 Appl. Phys. Lett. 88 073519
[2]	Bana D,Han S,Lu Z H,Oogarah T,Spring Thorpe A J,Liu H C 2007 Appl. Phys. Lett. 90 093108
[3]	Lee S H,Choo D J 2007 Appl. Phys. Lett. 90 033502
[4]	Zhang F J,Aollmer A,Zhang J,Xu Z,Rabe J P,Koch N,Org 2007 Electron. 8 606
[5]	Gundlach D J,Zhou L,Nichols J A 2006 Appl. Phys. 100 024509
[6]	Tian X Y,Xu Z,Zhao S L,Zhang F J 2009 Chin. Phys. B 18 5078
[7]	Tian X Y,Xu Z,Zhao S L,Zhang F J 2010 Chin. Phys. B 19 018103
[8]	Jackson T N 2005 Nature (London) 4 581
[9]	Berggren M 2007 Nature (London) 6 3
[10]	David J G 2007 Nature (London) 6 173
[11]	Liang W,Daniel Fine,Ananth Dodabalapurb 2004 Appl. Phys. Lett. 85 6386
[12]	Wang J,Wang H B,Yan X J,Huang H C,Yana D H 2005 Appl. Phys. Lett. 87 093507
[13]	Berliocchil M,Manentil M,Bolognesil A,Carlol A D,Luglil P,Paolesse R,Mandoy F,Natale C D,Proietti E,Petrocco G 2004 Semicond. Sci. Technol. 19 354
[14]	Antoniadis H,Hsieh B R,Abkowitz M A 1993 Appl. Phys. Lett. 62 3167
[15]	Lin L B,Jenekhe S A,Borsenberger P M 1996 Appl. Phys. Lett. 69 3495
[16]	Wei Z Q,Yang Q X,Sun G J 2001 Journal of Optoelectronics ·Laser 12 930 (in Chinese) [魏振乾、杨庆鑫、孙桂娟等 2001 光电子〖17] Yuan G C,Xu Z,Zhao S L,Zhang F J 2008 Chin. Phys. B 17 1887
[17]	Singh T B,Sariciftci N S 2006 Annu. Rev. Mater. Res. 36 199
[18]	Dimitrakopoulos C D,Mascaro D J 2001 IBM J. Res. Dev. 45 11

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Catalog

Vol. 59, Issue 11 - 2010-06-05

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