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Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng. Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays. Acta Physica Sinica,
2021, 70(11): 116102.
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Fan Qin-Hua, Zu Yan-Qing, Li Lu, Dai Jin-Fei, Wu Zhao-Xin. Research progress of stability of luminous lead halide perovskite nanocrystals. Acta Physica Sinica,
2020, 69(11): 118501.
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Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong. Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica,
2018, 67(17): 178501.
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Liu Feng-Bin, Chen Wen-Bin, Cui Yan, Qu Min, Cao Lei-Gang, Yang Yue. A first principles study on the active adsorbates on the hydrogenated diamond surface. Acta Physica Sinica,
2016, 65(23): 236802.
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Yuan Jun-Hui, Xie Qing-Xing, Yu Nian-Nian, Wang Jia-Fu. Effects of surface regulation on monolayers SbAs and BiSb. Acta Physica Sinica,
2016, 65(21): 217101.
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Xiao Mei-Xia, Liang You-Ping, Chen Yu-Qin, Liu-Meng. Strain field tuning the electronic and magnetic properties of semihydrogenated two-bilayer GaN nanosheets. Acta Physica Sinica,
2016, 65(2): 023101.
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Zhu Le-Yong, Gao Ya-Na, Zhang Jian-Hua, Li Xi-Feng. High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductor. Acta Physica Sinica,
2015, 64(16): 168501.
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Wang Li-Shi, Xu Jian-Ping, Shi Shao-Bo, Zhang Xiao-Song, Ren Zhi-Rui, Ge Lin, Li Lan. Influence of ZnS modification on the I-V performance of ZnO nanorods：P3HT composite films. Acta Physica Sinica,
2013, 62(19): 196103.
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Zheng Li-Si, Feng Miao, Zhan Hong-Bing. Effects of surface modification on nonlinear optical performance of gold nanoparticles. Acta Physica Sinica,
2012, 61(5): 054212.
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Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei. Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification. Acta Physica Sinica,
2012, 61(22): 228502.
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Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen. Study of zinc tin oxide thin-film transistor. Acta Physica Sinica,
2011, 60(3): 037305.
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2011, 60(3): 037201.
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Xu Tian-Ning, Wu Hui-Zhen, Zhang Ying-Ying, Wang Xiong, Zhu Xia-Ming, Yuan Zi-Jian. Fabrication and performance of indium oxide based transparent thin film transistors. Acta Physica Sinica,
2010, 59(7): 5018-5022.
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Sun Qin-Jun, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Gao Li-Yan, Tian Xue-Yan, Wang Yong-Sheng. Contact effect in organic thin film transistors. Acta Physica Sinica,
2010, 59(11): 8125-8130.
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Chen Yue-Ning, Xu Zheng, Zhao Su-Ling, Sun Qin-Jun, Yin Fei-Fei, Dong Yu-Hang. Research on least-squares fitting calculation of the field-effect mobility. Acta Physica Sinica,
2010, 59(11): 8113-8117.
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Liu Yu-Rong, Chen Wei, Liao Rong. Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene). Acta Physica Sinica,
2010, 59(11): 8088-8092.
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Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Xu Na, Sun Qin-Jun, Xu Xu-Rong. Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage. Acta Physica Sinica,
2009, 58(7): 4941-4947.
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Li He, Li Xue-Dong, Li Juan, Wu Chun-Ya, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Li-Zhu. Investigation on the improvement of the stability and uniformity of solution-based metal-induced crystallization poly-Si using surface-embellishment. Acta Physica Sinica,
2008, 57(4): 2476-2480.
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Huang Jin-Hua, Zhang Kun, Pan Nan, Gao Zhi-Wei, Wang Xiao-Ping. Enhancing ultraviolet photoresponse of ZnO nanowire device by surface functionalization. Acta Physica Sinica,
2008, 57(12): 7855-7859.
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia. Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica,
2003, 52(4): 830-833.
doi: 10.7498/aps.52.830
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