氧化物薄膜晶体管研究进展

兰林锋; 张鹏; 彭俊彪

doi:10.7498/aps.65.128504

摘要

氧化物半导体材料因其载流子迁移率高、制备温度低、电学均匀性好、对可见光透明和成本低等优势, 被认为是最适合驱动有机发光二极管的薄膜晶体管(TFT)的半导体有源材料之一. 目前氧化物TFT已成功地应用在平板显示的驱动背板上. 本文从氧化物TFT的历史和发展状况出发, 先介绍了氧化物半导体材料及其载流子输运机理, 然后详细介绍了氧化物TFT的结构、制备方法以及电学稳定性, 接着介绍了近些年来氧化物TFT的应用情况, 最后总结了氧化物TFT存在的问题以及今后研究的方向.

关键词:

Abstract

Oxide semiconductor is regarded as one of most suitable active materials of thin-film transistors (TFTs) for driving organic light-emitting diodes because of its advantages of high mobility, low-temperature processing, good electrical uniformity, visible-light transparency, and low cost. Currently oxide TFTs have been successfully applied to the backplanes of the flat-panel displays. This review gives a comprehensive understanding of the development process of oxide TFTs. In the present article, we review the major trend in the field of oxide TFTs. First, the questions of how to achieve high-mobility and high-stability oxide semiconductors are introduced, and the carrier transport mechanism is also addressed. Next, the device structures and the fabrication processes of the oxide TFTs are introduced. The electrical instability of the oxide TFTs is also discussed, which is critical for their applications in backplanes of the flat-panel displays. Especially, the mechanism of the threshold voltage instability of the oxide TFTs under negative bias illuminant stress is discussed in detail. Finally, the applications of oxide TFTs in flat-panel displays, such as active matrix organic light-emitting diodes and flexible displays, are addressed.

Keywords:

作者及机构信息

1.
华南理工大学, 发光材料与器件国家重点实验室, 广州 510640

通信作者: 兰林锋, lanlinfeng@scut.edu.cn

基金项目: 国家高技术研究发展计划 (批准号: 2014AA033002)、国家重点基础研究发展计划(批准号: 2015CB655000)和国家自然科学基金(批准号: 61204087, 51173049)资助的课题.

Authors and contacts

1.
State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, China

Corresponding author: Lan Lin-Feng, lanlinfeng@scut.edu.cn

Funds: Project supported by the National High Technology Research and Developmeng Program of China (Grant No. 2014AA033002), the National Basic Research Program of China (Grant No. 2015CB655000), and the National Natural Science Foundation of China (Grant Nos. 61204087, 51173049).

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施引文献

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