氢化非晶硅薄膜晶体管的低频噪声特性

刘远; 何红宇; 陈荣盛; 李斌; 恩云飞; 陈义强

doi:10.7498/aps.66.237101

摘要

针对氢化非晶硅薄膜晶体管（hydrogenated amorphous silicon thin film transistor，a-Si：H TFT）的低频噪声特性展开实验研究.由测量结果可知，a-Si：H TFT的低频噪声特性遵循1/fγ（f为频率，γ ≈ 0.92）的变化规律，主要受迁移率随机涨落效应的影响.基于与迁移率涨落相关的载流子数随机涨落模型（ΔN-Δμ模型），在考虑源漏接触电阻、局域态俘获及释放载流子效应等情况时，对器件低频噪声特性随沟道电流的变化进行分析与拟合.基于a-Si：H TFT的亚阈区电流-电压特性提取器件表面能带弯曲量与栅源电压之间的关系，通过沟道电流噪声功率谱密度提取a-Si：H TFT有源层内局域态密度及其分布.实验结果表明：局域态在禁带内随能量呈e指数变化，两种缺陷态在导带底密度分别约为6.31×1018和1.26×1018 cm-3·eV-1，特征温度分别约为192和290 K，这符合非晶硅层内带尾态密度及其分布特征.最后提取器件的平均Hooge因子，为评价非晶硅材料及其稳定性提供参考.

关键词:

Abstract

Low-frequency noise in the hydrogenated amorphous silicon thin film transistor is investigated in this paper. The drain current noise spectral density shows a 1/fγ (γ ≈ 0.92, f represents frequency) behavior which ascribes to fluctuations of the interfacial trapped charges due to the dynamic trapping and de-trapping of free carriers into slow oxide traps and localized traps. The normalized noise has the power law dependence on overdrive voltage, and the power law coefficient is about -1 which illustrates that the flicker noise is dominated by mobility fluctuation mechanism. By considering the contact resistance, and emission and trapping processes of carriers between localized states in the Si/SiNx interface, the variation of low frequency noise with drain current is analyzed and fitted by use of the theory of carrier number fluctuation with correlated mobility fluctuation (ΔN-Δμ model). Furthermore, the relationship between surface band-bending and gate voltage is extracted based on subthreshold current-voltage characteristics, and thus the density of localized states is then extracted through the measurement of drain current noise power spectral density. The experimental results show an exponential localized state distribution in the band-gap while densities of two defect modes at the bottom of conduction band NT1 and NT2 are about 6.31×1018 and 1.26×1018 cm-3·eV-1, and corresponding characteristic temperatures TT1 and TT2 are about 192 and 290 K, which is similar to the reported distribution of tail states in the amorphous silicon layer. Finally, the average Hooge's parameter is extracted to estimate the quality of devices and materials.

Keywords:

作者及机构信息

1.
工业和信息化部电子第五研究所, 电子元器件可靠性物理及其应用技术国家重点实验室, 广州 510610;

2.
华南理工大学微电子学院, 广州 510640;

3.
北京大学深圳研究生院信息工程学院, 深圳 518005;

4.
南华大学电气工程学院, 衡阳 421001

通信作者: 陈荣盛, Chenrs@scut.edu.cn

基金项目: 国家自然科学基金（批准号：61574048）、广东省科技重大专项（批准号：2015B090912002）和广州市珠江科技新星专项（批准号：201710010172）资助的课题.

Authors and contacts

1.
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI, Guangzhou 510610, China;

2.
School of Microelectronics, South China University of Technology, Guangzhou 510640, China;

3.
School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518005, China;

4.
School of Electrical Engineering, University of South China, Hengyang 421001, China

Corresponding author: Chen Rong-Sheng, Chenrs@scut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61574048), the Science and Technology Research Project of Guangdong, China (Grant No. 2015B090912002), and the Pearl River S&T Nova Program of Guangzhou, China (Grant No. 201710010172).

参考文献

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[2]	Hu Z J, Wang L L, Liao C W, Zeng L M, Lee C Y, Lien A, Zhang S D 2015 IEEE Trans. Electron Dev. 62 4037
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[10]	Jung K D, Kim Y C, Park B G, Shin H, Lee J D 2009 IEEE Trans. Electron Dev. 56 431
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[12]	Xu Y, Minari T, Tsukagoshi K, Gwoziecki R, Coppard R, Balestra F, Chroboczek J A, Ghibaudo G 2010 Appl. Phys. Lett. 97 033503
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[19]	Jayaraman R, Sodini C G 1989 IEEE Trans. Electron Dev. 36 1773
[20]	Dimitriadis C A, Brini J, Lee J I, Farmakis F V, Kamarinos G 1999 J. Appl. Phys. 85 3934
[21]	Hooge F N 1994 IEEE Trans. Electron Dev. 41 1926
[22]	Liu Y, Wu W J, Li B, En Y F, Wang L, Liu Y R 2014 Acta Phys. Sin. 63 098503 (in Chinese)[刘远, 吴为敬, 李斌, 恩云飞, 王磊, 刘玉荣 2014 63 098503]
[23]	Fung T C, Baek G, Kanicki J 2010 J. Appl. Phys. 108 074518
[24]	Ghibaudo G, Roux Q, Dguyen-Dug C H, Balestra F, Brini J 1991 Phys. Stat. Sol. 124 571
[25]	Choi H S, Jeon S, Kim H, Shin J, Kim C, Chung U I 2011 IEEE Trans. Electron Dev. 32 1083
[26]	Dimitriadis C A, Farmakis F A, Kamarinos G, Brini J 2002 J. Appl. Phys. 91 9919
[27]	Ghibaudo G, Boutchacha T 2002 Microelectron. Relia. 42 573
[28]	Vandamme L K J 1994 IEEE Trans. Electron Dev. 41 2176
[29]	Delker C J, Zi Y L, Yang C, Jane D B 2013 IEEE Trans. Electron Dev. 60 2900
[30]	He H Y, Zheng X R, Zhang S D 2015 IEEE Electron. Dev. Lett. 36 1056
[31]	Pichon L, Cretu B, Boukhenoufa A 2009 Thin Solid Films 517 6367
[32]	Liu Y, Wu W J, Qiang L, Wang L, En Y F, Li B 2015 Chin. Phys. Lett. 32 088506
[33]	Vandamme L K J, Hooge F N 2008 IEEE Trans. Electron Dev. 55 3070
[34]	Mercha A, Pichon L, Carin R, Mourgues K, Bonnaud O 2001 Thin Solid Films 383 303
[35]	Vandamme L K J, Feyaerts R, Trefan G, Detcheverry C 2002 J. Appl. Phys. 91 719

施引文献

[1]	Nathan A, Kumar A, Sakariya K, Servati P, Sambandan S, Striakhilev D 2004 IEEE J. Solid-State Circ. 39 1477
[2]	Hu Z J, Wang L L, Liao C W, Zeng L M, Lee C Y, Lien A, Zhang S D 2015 IEEE Trans. Electron Dev. 62 4037
[3]	Deane S, Wehrspohn R B, Powell M J 1998 Phys. Rev. B 58 12625
[4]	He H Y, He J, Deng W L, Wang H, Liu Y, Zheng X R 2014 IEEE Trans. Electron Dev. 61 3744
[5]	Liu Y, Yao R H, Li B, Deng W L 2008 J. Disp. Technol. 4 180
[6]	Rhayem J, Valenza M, Rigaud D, Szydlo N, Lebrun H 1998 J. Appl. Phys. 83 3660
[7]	Rigaud D, Valenza M, Rhayem J 2002 IET Proc. Circuits Devices Syst. 149 75
[8]	Hatzopoulos A T, Arpatzanis N, Tassis H, Dimitriadis C A, Templier F, Oudwan M, Kamarinos G 2007 Solid-State Electron. 51 726
[9]	Tai Y H, Chang C Y, Hsieh C L, Yang Y H, Chao W K, Chen H E 2014 IEEE Electron Dev. Lett. 35 229
[10]	Jung K D, Kim Y C, Park B G, Shin H, Lee J D 2009 IEEE Trans. Electron Dev. 56 431
[11]	Chen C Y, Kanicki J 1998 Solid-State Electron. 42 705
[12]	Xu Y, Minari T, Tsukagoshi K, Gwoziecki R, Coppard R, Balestra F, Chroboczek J A, Ghibaudo G 2010 Appl. Phys. Lett. 97 033503
[13]	Kimura M, Nakanishi T, Nomura K, Kamiya T, Hosono H 2008 Appl. Phys. Lett. 92 133512
[14]	Xu P R, Qiang L, Yao R H 2015 Acta Phys. Sin. 64 137101 (in Chinese)[徐飘荣, 强蕾, 姚若河 2015 64 137101]
[15]	Bae H, Choi H, Oh S, Kim D H, Bae J, Kim J, Kim Y H, Kim D M 2013 IEEE Electron Dev. Lett. 34 57
[16]	Lee J, Jun S, Jang J, Bae H, Kim H, Chung J W, Choi S J, Kim D H, Lee J, Kim D M 2013 IEEE Electron Dev. Lett. 34 1521
[17]	Servati P, Nathan A 2002 IEEE Trans. Electron Dev. 49 812
[18]	Wang J, Liu Y, Liu Y R, Wu W J, Luo X Y, Liu K, Li B, En Y F 2016 Acta Phys. Sin. 65 128501 (in Chinese)[王静, 刘远, 刘玉荣, 吴为敬, 罗心月, 刘凯, 李斌, 恩云飞 2016 65 128501]
[19]	Jayaraman R, Sodini C G 1989 IEEE Trans. Electron Dev. 36 1773
[20]	Dimitriadis C A, Brini J, Lee J I, Farmakis F V, Kamarinos G 1999 J. Appl. Phys. 85 3934
[21]	Hooge F N 1994 IEEE Trans. Electron Dev. 41 1926
[22]	Liu Y, Wu W J, Li B, En Y F, Wang L, Liu Y R 2014 Acta Phys. Sin. 63 098503 (in Chinese)[刘远, 吴为敬, 李斌, 恩云飞, 王磊, 刘玉荣 2014 63 098503]
[23]	Fung T C, Baek G, Kanicki J 2010 J. Appl. Phys. 108 074518
[24]	Ghibaudo G, Roux Q, Dguyen-Dug C H, Balestra F, Brini J 1991 Phys. Stat. Sol. 124 571
[25]	Choi H S, Jeon S, Kim H, Shin J, Kim C, Chung U I 2011 IEEE Trans. Electron Dev. 32 1083
[26]	Dimitriadis C A, Farmakis F A, Kamarinos G, Brini J 2002 J. Appl. Phys. 91 9919
[27]	Ghibaudo G, Boutchacha T 2002 Microelectron. Relia. 42 573
[28]	Vandamme L K J 1994 IEEE Trans. Electron Dev. 41 2176
[29]	Delker C J, Zi Y L, Yang C, Jane D B 2013 IEEE Trans. Electron Dev. 60 2900
[30]	He H Y, Zheng X R, Zhang S D 2015 IEEE Electron. Dev. Lett. 36 1056
[31]	Pichon L, Cretu B, Boukhenoufa A 2009 Thin Solid Films 517 6367
[32]	Liu Y, Wu W J, Qiang L, Wang L, En Y F, Li B 2015 Chin. Phys. Lett. 32 088506
[33]	Vandamme L K J, Hooge F N 2008 IEEE Trans. Electron Dev. 55 3070
[34]	Mercha A, Pichon L, Carin R, Mourgues K, Bonnaud O 2001 Thin Solid Films 383 303
[35]	Vandamme L K J, Feyaerts R, Trefan G, Detcheverry C 2002 J. Appl. Phys. 91 719

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