Study of ZnO photoconductive X-ray detector

Zhao Xiao-Long; Kang Xue; Chen Liang; Zhang Zhong-Bing; Liu Jin-Liang; Ouyang Xiao-ping; Peng Wen-Bo; He Yong-Ning

doi:10.7498/aps.63.098502

Abstract

Ag-ZnO-Ag X-ray detectors based on ZnO film and nanowires are both fabricated in this paper. Results of continuous X-ray radiation measurement show that the two detectors have high responsivity: the responsivity of the ZnO film device is about 0.12 μC/Gy under a 100 V bias voltage, and that of the ZnO nanowires device is about 0.15 μC/Gy under a 50 V bias voltage. Surface effect due to the absorption and desorption of oxygen on the ZnO surface, which makes the carrier lifetime increase, is decisive to the high responsivity. ZnO film and nanowires have their potential applications in the X-ray dose rate measurement.

Keywords:

Authors and contacts

1.
The School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
2.
Radiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi'an 710024, China
Funds: Project Supported by the National Natural Science Foundation of China (Grant Nos. 60876038, 11375144), and the Fundamental Research Funds for the Central Universities of China in project of Investigation of ZnO Nanostructure Based Scintillators.

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Cited By

[1]	McGregor D S, Hermon H 1997 Nucl. Instrum. Methods in Phys. Res., Section A 395 101
[2]	Owens A, Peacock A 2004 Nucl. Instrum. Methods in Phys. Res., Section A 531 18
[3]	Metzger S, Henschel H, Kohn O, Lennartz W 2002 IEEE Trans. Nucl. Sci. 49 1351
[4]	Zhang L, Xiao J, Qiu Y Z, Cheng H L 2011 Acta Phys. Sin. 60 056106 (in Chinese) [张林, 肖剑, 邱彦章, 程鸿亮 2011 60 056106]
[5]	Vaitkus J, Cunningham W, Gaubas E, Rahman M, Sakai S, Smith K M, Wang T 2003 Nucl. Instrum. Methods in Phys. Res. Section A 509 60
[6]	Kania D R, Landstrass M I, Plano M A, Pan L S, Han S 1993 Diamond Relat. Mater. 2 1012
[7]	Ouyang X P, Wang L, Fan R Y, Zhang Z B, Wang W, L F X, Tang W Z, Chen G C 2006 Acta Phys. Sin. 55 2170 (in Chinese) [欧阳晓平, 王兰, 范如玉, 张忠兵, 王伟, 吕反修, 唐伟忠, 陈广超 2006 55 2170]
[8]	Shen D Z, Mei Z X, Liang H L, Du X L, Ye J D, Gu S L, Wu Y X, Xu C X, Zhu G Y, Dai J, Chen M M, Ji X, Tang Z K, Shan C X, Zhang B L, Du G T, Zhang Z Z 2014 Acta Optica Sinica 35 1 (in Chinese) [申德振, 梅增霞, 梁会力, 杜小龙, 叶建东, 顾书林, 吴玉喜, 徐春祥, 朱刚毅, 戴俊, 陈明明, 季旭, 汤子康, 单崇新, 张宝林, 杜国同, 张振中 2014 发光学报 35 1]
[9]	Pan Y W, Ren S T, Qu S L, Wang Q 2013 Chin. Phys. B 22 118102
[10]	Liu K, Sakurai M, Aono M 2010 Sensors 10 8604
[11]	Klingshirn C 2007 Chem. Phys. Chem. 8 782
[12]	Zhang B, Li M, Wang J Z, Shi L Q 2013 Chin. Phys. Lett. 30 027303
[13]	Wang X H, Li R B, Fan D H 2013 Chin. Phys. Lett. 30 037202
[14]	Endo H, Chiba T, Meguro K, Takahashi K, Fujisawa M, Sugimura S, Narita S, Kashiwaba Sato Y, E 2011 Nucl. Instrum. Methods in Phys. Res. Section A 665 15
[15]	Gao X, Kang Q S, Yeow J T W, Barnett R 2010 Nanotechnology 21 285502
[16]	He Y, Zhang W, Zhang S, Kang X, Peng W, Xu Y 2012 Sens. Actuators, A 181 6
[17]	Lampert, M A 1964 Rep. Progr. Phys. 27 329

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Vol. 63, Issue 9 - 2014-05-05

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