The amorphous indium-gallium-zinc-oxide (a-IGZO) thin films are prepared by radio frequency magnetron sputtering at ambient temperature. The transparent thin film transistors (TFT) fabricated at low temperature (a-IGZO active channel exhibits good electrical properties with a field effect mobility of around 10 cm2·V-1·s-1, subthreshold swing of 0.4 V/decade, and high Ionoff current ratio of over 107. Hysteresis is not observed when gate voltage sweeps forward and reverses. And the dependence of white LED illumination on characteristic of a-IGZO TFT is investigated. The results show that output characteristic is hardly affected, indicating the potential of the devices for transparent electronics In particular, illumination stability is investigated under white LED illumination stress test, and the a-IGZO TFT shows only 04 V shift in threshold voltage. The negative shift can be explained on the basis of trap of interface state.