Junctionless low-voltage thin-film transistors based on indium-tin-oxide

Zhao Kong-Sheng; Xuan Rui-Jie; Han Xiao; Zhang Geng-Ming

doi:10.7498/aps.61.197201

Abstract

Bottom-gate junctionless thin-film transistors (TFTs) based on indium-tin-oxide (ITO) are fabricated at room temperature. Source/drain electrodes and channel layer are the same ITO thin films without source/drain junction formation, hence the fabrication process is greatly simplified and the fabrication cost is reduced. We employ electric-double-layer (EDL) SiO2 with large capacitance as the gate dielectric, and find that the drain current can be effectively modulated by the gate bias when the thickness of ITO film decreases to about 20 nm. These junctionless TFTs show excellent electrical performances with a small subthreshold swing of 0.13 V/dec, a high mobility of 21.56 cm2/V·s and a large on/off ratio of 1.3× 106. The performances of these junctionless TFTs do not show significant degradation even after 4 months in air ambient, the subthreshold swing is still 0.13 V/dec, the mobility slightly decreases to 18.99 cm2/V·s and the on/off ratio is still larger than 106. Such TFTs are very promising for the applications in low-cost low-power portable electronic products and novel sensors.

Keywords:

Authors and contacts

1.
Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, Hunan University, Changsha 410082, China
Funds: Project supported by the National Basic Research Program of China (Grant No. 2007CB310500), and the National Natural Science Foundation of China (Grant No. 10874042).

References

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Cited By

[1]	Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Colinge J P 2009 Appl. Phys. Lett. 94 053511
[2]	Colinge J P, Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Razavi P, O'Neill B, Blake A, White M, Kelleher A M, McCarthy B, Murphy R 2010 Nat. Nanotechnol. 5 225
[3]	Lee C W, Nazarov A N, Ferain I, Akhavan N D, Yan R, Razavi P, Yu R, Doria R T, Colinge J P 2010 Appl. Phys. Lett. 96 102106
[4]	Akhavan N D, Ferain I, Razavi P, Yu R, Colinge J P 2011 Appl. Phys. Lett. 98 103510
[5]	Xu T N, Wu H Z, Zhang Y Y, Wang X, Zhu X M, Yuan Z J 2010 Acta Phys. Sin. 59 5018 (in Chinese) [徐天宁,吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健 2010 59 5018]
[6]	Wang X, Cai X K, Yuan Z J, Zhu X M, Qiu D J, Wu H Z 2011 Acta Phys. Sin. 60 037305 (in Chinese) [王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 60 037305]
[7]	Granqvist C G, Hultaker A 2002 Thin Solid Films 411 1
[8]	Cho J H, Lee J, Xia Y, Kim B, He Y Y, Renn M J, Lodge T P, Frisbie C D 2008 Nature Mater. 7 900
[9]	Cho J H, Lee J, He Y Y, Kim B, Lodge T P, Frisbie C D 2008 Adv. Mater. 20 686
[10]	Sun J , Wan Q, Lu A X, Jiang J 2009 Appl. Phys. Lett. 95 222108
[11]	Jiang J, Wan Q, Sun J, Lu A X 2009 Appl. Phys. Lett. 95 152114
[12]	Lu A X, Sun J, Jiang J, Wan Q 2010 Appl. Phys. Lett. 90 043114
[13]	Jiang J, Sun J, Zhou B, Lu A X, Wan Q 2010 Appl. Phys. Lett. 97 052104
[14]	Gorrn P, Holzer P, Riedl T, Kowalsky W, Wang J, Weimann T, Hinze P, Kipp S 2007 Appl. Phys. Lett. 90 063502
[15]	Cross R B M, Souza M M D 2006 Appl. Phys. Lett. 89 263513
[16]	Suresh A, Muth J F 2008 Appl. Phys. Lett. 92 033502
[17]	Vygranenko Y, Wang K, Nathan A 2007 Appl. Phys. Lett. 91 263508
[18]	Jeong J K, Yang H W, Jeong J H, Mo Y G, Kim H D 2008 Appl. Phys. Lett. 93 123508
[19]	Sun J, Jiang J, Dou W, Zhou B, and Wan Q 2011 IEEE Electron Device Lett. 32 910

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Vol. 61, Issue 19 - 2012-10-05

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