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本文在室温下制备了无结结构的低压氧化铟锌薄膜晶体管, 并研究了氧分压对其稳定性的影响. 氧化铟锌无结薄膜晶体管具有迁移率高、结构新颖等优点, 然而氧化物沟道层易受氧、水分子等影响, 造成稳定性下降. 在室温下, 本文通过改变高纯氧流量制备氧化铟锌透明导电薄膜作为沟道层、源漏电极, 分析了氧压对于氧化物无结薄膜晶体管稳定性的影响. 为使晶体管在低电压(6、亚阈值斜率小于100 mV/decade以及场效 应迁移率大于20 cm2/V·s. 实验研究表明, 通氧制备的氧化铟锌薄膜的电阻率会上升, 导致晶体管的阈值电压向正向漂移, 最终使晶体管的工作模式由耗尽型转变为增强型.We report in this paper that low-voltage indium-zinc oxide (IZO) junctionless thin-film transistors (TFT) can be fabricated at room temperature, and the device stability performance influenced by oxygen pressure is studied. IZO junctionless TFT has a high mobility and novel structure, but the oxide channel layers are vulnerable due to the influence of oxygen and water molecules, which will lead to the degradation of the device stability. In this study, we fabricate transparent and conductive IZO thin-films at room temperature as channel layers, and source/drain electrodes by controlling the oxygen flow, and also analyze the effect of oxygen on the stability of oxide junctionless TFT. In order to operate at low-voltage (2 nanoparticle films as gate dielectric, which have electron double layers (EDL) effect and large gate capacitance, and the TFTs show excellent electrical performance with small operating voltage of 1 V, large on/off ratio(>106), small subthreshold swing(20 cm2/V·s). The study indicates that the resistivity of IZO thin-film fabricated in increasing oxygen content, leads the threshold voltage to drift in a positive direction, and makes operating mode of TFT change from depletion mode to enhanced mode.
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Keywords:
- thin-film transistor /
- junctionless /
- indium zinc oxide /
- oxygen molecules
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[12] Jiang J, Dai M Z, Sun J, Zhou B, Lu A X, Wan Q 2011 J. Appl. Phys. 109 054501
[13] Zhao K S, Xuan R J, Han X, Zhang G M 2012 Acta Phys. Sin. 61 197201 (in Chinese) [赵孔胜, 轩瑞杰, 韩笑, 张耕铭 2012 61 197201]
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[1] Kim C, Huang P Y, Jhuang J W, Chen M C, Ho J C, Hu T S, Yan J Y, Chen L H, Lee G H, Facchetti A, Marks T J 2010 Org. Electron. 11 1363
[2] Nie G Z, Peng J B, Zhou R L 2011 Acta Phys. Sin. 60 127304 (in Chinese) [聂国政, 彭俊彪, 周仁龙 2011 60 127304]
[3] Yuan G C, Xu Z, Zhao W L, Zhang F J, Xu N, Tian X Y, Xu X R 2009 Chin Phys. B 18 3990
[4] Shi W W, Li W, Yi D M, Xie L H, Wei W, Huang W 2013 Acta Phys. Sin. 61 228502 (in Chinese) [石巍巍, 李雯, 仪明东, 解令海, 韦玮, 黄维 2013 61 228502]
[5] Ionescu A M 2010 Nature Nanotech. 5 178
[6] Colinge J P, Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Razavi P, O'Neill B, Blake A, White M, Kelleher A M, McCarthy B, Murphy R 2010 Nature Nanotech. 5 225
[7] Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Colinge J P 2009 Appl. Phys. Lett. 94 053511
[8] Wu H Z, Zhang Y Y, Wang X, Zhu X M, Yuan Z J, Xu T N 2010 Acta Phys. Sin. 59 5022 (in Chinese) [吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健, 徐天宁 2010 59 5022]
[9] Wang X, Cai X K, Yuan Z J, Zhu X M, Qiu D J, Wu H Z, 2011 Acta Phys. Sin. 60 037305 (in Chinese) [王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 60 037305]
[10] Fortunato E, Pimentel A, Goncalves A, Marques A, Martins R 2006 Thin Solid Films 502 104
[11] Kang D, Lim H, Kim C, Song I, Park J, Park Y, Chung J 2007 Appl. Phys. Lett. 90 192101
[12] Jiang J, Dai M Z, Sun J, Zhou B, Lu A X, Wan Q 2011 J. Appl. Phys. 109 054501
[13] Zhao K S, Xuan R J, Han X, Zhang G M 2012 Acta Phys. Sin. 61 197201 (in Chinese) [赵孔胜, 轩瑞杰, 韩笑, 张耕铭 2012 61 197201]
[14] Jeong J K, Yang H W, Jeong J H, Mo Y G, Kim H D 2008 Appl. Phys. Lett. 93 123508
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