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中国物理学会期刊
Tan Ji, Zhu Yang-Jun, Lu Shuo-Jin, Tian Xiao-Li, Teng Yuan, Yang Fei, Zhang Guang-Yin, Shen Qian-Xing. Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive loadJ. Acta Physica Sinica, 2016, 65(15): 158501. DOI: 10.7498/aps.65.158501
Citation: Tan Ji, Zhu Yang-Jun, Lu Shuo-Jin, Tian Xiao-Li, Teng Yuan, Yang Fei, Zhang Guang-Yin, Shen Qian-Xing. Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive loadJ. Acta Physica Sinica, 2016, 65(15): 158501. DOI: 10.7498/aps.65.158501

    Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive load

    CSTR: 32037.14.aps.65.158501
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