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A novel SiGe heterojunction bipolar transistor (HBT) with a trench-type emitter is presented. Effects of the trench-type emitter on device performance are analyzed in detail, and current transport mechanism of the novel device is studied. The emitter resistances are parallel partitions by changing current path. Under the precondition without increasing the junction capacitance, the resistances of the new emitter are reduced effectively, and the frequency characteristics of the device are improved. Results show that the cutoff frequency and the maximum oscillation frequency of the new device are increased to 100.2 GHz and 134.4 GHz, respectively. More important is that the frequency characteristics are improved by the introduction of the trench-type emitter, while the current gain is not reduced and the junction capacitance is also not increased. A good trade-off is achieved among frequency, current gain, and junction capacitance. The trench-type emitter is designed to be optimal. With the change in sidewall height, no effects are found on the emitter resistances, and the frequency characteristics do not change, while the frequency characteristics are reduced when the sidewall width is increased.
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Keywords:
- SiGe HBT /
- trench-type emitter /
- emitter resistance
[1] Rieh J S, Jagannathan B, Greenberg D R, Meghelli M, Rylyakov A, Guarin F, Zhi J Y, Ahlgren D C, Freenman G, Cottrell P, Harame D 2004 IEEE Trans. Microw. Theory 52 2390
[2] Hadi R A, Grzyb J, Heinemann B, Pfeiffer U R 2013 IEEE J. Solid-St. Circ. 48 2002
[3] Jiahui Y, Cressler J D 2011 IEEE Trans. Electr. Dev. 58 1655
[4] Pekarik J J, Adkisson J W, Camillo C R, Cheng P, Divergilio A W, Gray P B, Jain V, Kaushal V, Khater M H, Liu Q, Harame D L 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Portland, OR, United States, Sept. 30-Oct. 3, 2012 p1
[5] Jia S M, Yang R X, Guo H J 2011 7th International Conference on Wireless Communication, Networking and Mobile Computing, Wuhan, China, Sept. 23-25, 2011 p1
[6] Chevalier P, Meister T F, Heinemann B, Van H S, Liebl W, Fox A, Sibaja H A, Chantre A 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Atlanta, GA, United States, Oct. 9-11, 2011 p57
[7] Schroter M, Wedel G, Heinemann B, Jungemann C, Krause J, Chevalier P, Chantre A 2011 IEEE Trans. Electr. Dev. 58 3687
[8] Chevalier P, Barbalat B, Rubaldo L, Vandelle B, Dutartre D, Bouillon P, Jagueneau T, Richard C, Saguin F, Margain A, Chantre A 2005 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Santa Barbara, CA, United States, Oct. 9-11, 2005 p120
[9] Dacquay E, Tomkins A, Yau K H K, Laskin E, Chevalier P, Chantre A, Sautreuil B, Voinigescu S P 2012 IEEE Trans. Microw. Theory 60 813
[10] Chevalier P, Fellous C, Rubaldo L, Pourchon F, Pruvost S, Beerkens R, Saguin F, Zerounian N, Barbalat B, Lepilliet S, Dutartre D, Celi D, Telliez I, Gloria D, Aniel F, Danneville F, Chantre A 2005 IEEE J. Solid-St. Circ. 40 2025
[11] Xu X B, Zhang H M, Hu H Y 2011 Acta Phys. Sin. 60 118501 (in Chinese) [徐小波, 张鹤鸣, 胡辉勇 2011 60 118501]
[12] Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 62 048501]
[13] Misra, P K, Qureshi S 2013 IEEE J. Electr. Dev. Society 1 92
[14] Liu J, Guo F, Gao Y 2014 Acta Phys. Sin. 63 048501 (in Chinese) [刘静, 郭飞, 高勇 2014 63 048501]
[15] Peng C, Liu Q, Camillo C R, Liedy B, Adkisson J, Pekarik J, Gray P, Kaszuba P, Moszkowicz L, Zetterlund B, Macha K, Tallman K, Khater M, Harame D 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Portland, OR, United States, Sept. 30-Oct. 3, 2012 p1
[16] Fox A, Heinemann B, Barth R, Marschmeyer S, Wipf C, Yamamoto Y 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Atlanta, GA, United States, Oct. 9-11, 2011 p70
[17] Jagnnathan B, Khater M, Pagette F, Rieh J S, Angell D, Chen H, Florkey J, Golan F, Greenberg D R, Groves R, Jeng S J, Johnson J, Mengistu E, Schonenberg K T, Schnabel C M, Smith P, Stricker A, Ahlgren D, Freeman G, Stein K, Subbanna S 2002 IEEE Electr. Dev. Lett. 23 258
[18] Jia X Z, Hu H Y, Zhang H M, Dai X Y 2005 Chin. Phys. 14 1439
[19] Rieh J S, Greenberg D, KHater M, Schonenberg K T, Jeng S J, Pagette F, Adam T, Chinthakindi A, Florkey J, Jagannathan B, Johnson J, Krishnasamy R, Sanderson D, Schnabel C, Smith P, Stricker A, Sweeney S, Vaed K, Yanagisawa T, Ahlgren D, Stein K, Freeman G 2004 IEEE Radio Frequency Integrated Circuits Symposium, Hsinchu, China, June 6-8, 2004 p395
[20] Chen W L, Chau H F, Tutt M, Ho M C, Kim T S, Henderson T 1997 IEEE Electr. Dev. Lett. 18 355
[21] Yang Y, Tong X, Yang L T, Guo P F, Fan L, Yeo Y C 2010 IEEE Electr. Dev. Lett. 31 752
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[1] Rieh J S, Jagannathan B, Greenberg D R, Meghelli M, Rylyakov A, Guarin F, Zhi J Y, Ahlgren D C, Freenman G, Cottrell P, Harame D 2004 IEEE Trans. Microw. Theory 52 2390
[2] Hadi R A, Grzyb J, Heinemann B, Pfeiffer U R 2013 IEEE J. Solid-St. Circ. 48 2002
[3] Jiahui Y, Cressler J D 2011 IEEE Trans. Electr. Dev. 58 1655
[4] Pekarik J J, Adkisson J W, Camillo C R, Cheng P, Divergilio A W, Gray P B, Jain V, Kaushal V, Khater M H, Liu Q, Harame D L 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Portland, OR, United States, Sept. 30-Oct. 3, 2012 p1
[5] Jia S M, Yang R X, Guo H J 2011 7th International Conference on Wireless Communication, Networking and Mobile Computing, Wuhan, China, Sept. 23-25, 2011 p1
[6] Chevalier P, Meister T F, Heinemann B, Van H S, Liebl W, Fox A, Sibaja H A, Chantre A 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Atlanta, GA, United States, Oct. 9-11, 2011 p57
[7] Schroter M, Wedel G, Heinemann B, Jungemann C, Krause J, Chevalier P, Chantre A 2011 IEEE Trans. Electr. Dev. 58 3687
[8] Chevalier P, Barbalat B, Rubaldo L, Vandelle B, Dutartre D, Bouillon P, Jagueneau T, Richard C, Saguin F, Margain A, Chantre A 2005 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Santa Barbara, CA, United States, Oct. 9-11, 2005 p120
[9] Dacquay E, Tomkins A, Yau K H K, Laskin E, Chevalier P, Chantre A, Sautreuil B, Voinigescu S P 2012 IEEE Trans. Microw. Theory 60 813
[10] Chevalier P, Fellous C, Rubaldo L, Pourchon F, Pruvost S, Beerkens R, Saguin F, Zerounian N, Barbalat B, Lepilliet S, Dutartre D, Celi D, Telliez I, Gloria D, Aniel F, Danneville F, Chantre A 2005 IEEE J. Solid-St. Circ. 40 2025
[11] Xu X B, Zhang H M, Hu H Y 2011 Acta Phys. Sin. 60 118501 (in Chinese) [徐小波, 张鹤鸣, 胡辉勇 2011 60 118501]
[12] Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 62 048501]
[13] Misra, P K, Qureshi S 2013 IEEE J. Electr. Dev. Society 1 92
[14] Liu J, Guo F, Gao Y 2014 Acta Phys. Sin. 63 048501 (in Chinese) [刘静, 郭飞, 高勇 2014 63 048501]
[15] Peng C, Liu Q, Camillo C R, Liedy B, Adkisson J, Pekarik J, Gray P, Kaszuba P, Moszkowicz L, Zetterlund B, Macha K, Tallman K, Khater M, Harame D 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Portland, OR, United States, Sept. 30-Oct. 3, 2012 p1
[16] Fox A, Heinemann B, Barth R, Marschmeyer S, Wipf C, Yamamoto Y 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Atlanta, GA, United States, Oct. 9-11, 2011 p70
[17] Jagnnathan B, Khater M, Pagette F, Rieh J S, Angell D, Chen H, Florkey J, Golan F, Greenberg D R, Groves R, Jeng S J, Johnson J, Mengistu E, Schonenberg K T, Schnabel C M, Smith P, Stricker A, Ahlgren D, Freeman G, Stein K, Subbanna S 2002 IEEE Electr. Dev. Lett. 23 258
[18] Jia X Z, Hu H Y, Zhang H M, Dai X Y 2005 Chin. Phys. 14 1439
[19] Rieh J S, Greenberg D, KHater M, Schonenberg K T, Jeng S J, Pagette F, Adam T, Chinthakindi A, Florkey J, Jagannathan B, Johnson J, Krishnasamy R, Sanderson D, Schnabel C, Smith P, Stricker A, Sweeney S, Vaed K, Yanagisawa T, Ahlgren D, Stein K, Freeman G 2004 IEEE Radio Frequency Integrated Circuits Symposium, Hsinchu, China, June 6-8, 2004 p395
[20] Chen W L, Chau H F, Tutt M, Ho M C, Kim T S, Henderson T 1997 IEEE Electr. Dev. Lett. 18 355
[21] Yang Y, Tong X, Yang L T, Guo P F, Fan L, Yeo Y C 2010 IEEE Electr. Dev. Lett. 31 752
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