AlGaN/AlN/GaN高电子迁移率器件的电容电压特性的经验拟合

王鑫华; 赵妙; 刘新宇; 蒲颜; 郑英奎; 魏珂

doi:10.7498/aps.60.047101

摘要

利用蓝宝石衬底的AlGaN/AlN/GaN 高电子迁移率器件(HEMT)的电容电压(C-V)特性,对电子费米能级与二维电子气面密度的经验关系进行表征,其结果对器件电荷控制模型的建立,跨导及电容表达式的简化有重要意义.文章创新性地提出参数α用于表征二维势阱对沟道电子限制能力,并认为α越小则二维势阱的沟道电子限制能力越强.利用上述经验关系来拟合电容,可以获得与实测电容很好的一致性.

关键词:

This paper expresses the experiential relationship between Fermi level and the density of two-dimensional electron gas, based on the capacitance voltage (C-V) characteristics of the AlGaN/AlN/GaN high electron mobility transistor (HEMT) on sapphire substrate. The expression provides important references for establishing the device charge control model and simpliying the transconductance and capacitance. Parameter α is introduced for describing the ability for the two-dimensional potential well to restrict electrons, and we believe that the smaller the value of α, the stronger the restricting ability is. A coherent fitting effect, compared with the measurement, is obtained by making use of the experiential relationship said above.

Keywords:

作者及机构信息

1.
中国科学院微电子研究所,微电子器件与集成技术重点实验室,北京 100029

基金项目: 国家重点基础研究发展计划(批准号:2010CB327500),国家自然科学基金(批准号:60976059,60890191)资助的课题.

Authors and contacts

1.
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of microelectronicsof Chinese Academy of Sciences, Beijing 100029, China

参考文献

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[10]	Zhang J F, Zhang J C, Hao Y 2004 Chin. Phys. 13 1334
[11]	Wang X H, Zhao M, Liu X Y, Pu Y, Zheng Y K, Wei K 2010 Chin. Phys. B 19 097302
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[16]	Kwangman P, Hong Bae K, Kae Dal K 1987 IEEE Transactions on Electron Devices 34 2422
[17]	Cazaux J L, Ng G I, Pavlidis D, Chau H F 1988 IEEE Transactions on Electron Devices 35 1223
[18]	Ando Y, Itoh T 1988 IEEE Transactions on Electron Devices 35 2295
[19]	Shey A J, Ku W H 1988 IEEE Electron Device Letters 9 624
[20]	Kokorev M F, Maleev N A 1996 Solid-State Electronics 39 297
[21]	Liu W L, Chen Y L, Balandin A A, Wang K L 2006 Journal of Nanoelectronics and Optoelectronics 1 258
[22]	Moloney M J, Ponse F, Morkoc H 1985 IEEE Transactions on Electron Devices 32 1675
[23]	Karmalkar S 1997 IEEE Transactions on Electron Devices 44 862
[24]	Ketterson A A, Morkoc H 1986 IEEE Transactions on Electron Devices 33 1626
[25]	Anwar A F M, Liu K W 1993 IEEE Transactions on Electron Devices 40 1174
[26]	Ando Y, Itoh T 1990 IEEE Transactions on Electron Devices 37 67
[27]	Tong K Y 1991 Electronics Letters 27 668
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[29]	Khondker A N, Anwar A F M, Islam M A, Limoncelli L, Wilson D 1986 IEEE Transactions on Electron Devices 33 1825

施引文献

[1]	Jimenez J L, Chowdhury U 2008 IEEE 46th Annual International Reliability Physics Symposium Phoenix, USA, APR 27-MAY 01, 2008 p429
[2]	Guo L, Wang X, Wang C, Xiao H, Ran J, Luo W, Wang X, Wang B, Fang C, Hu G 2008 Microelectronics Journal 39 777
[3]	Lisesivdin S B, Balkan N, Makarovsky O, Patane A, Yildiz A, Caliskan M D, Kasap M, Ozcelik S, Ozbay E 2009 Journal of Applied Physics 105 6
[4]	Qian F, Leach J H, Jinqiao X, Ozgur U, Morkoc H, Zhou L, Smith D J 2009 Proceedings of the International Society for Optical Engineering San Jose, USA, January 26—29, 2009 p14
[5]	Kumar S P, Agrawal A, Kabra S, Gupta M, Gupta R S 2006 Microelectronics Journal 37 1339
[6]	Farahmand M, Garetto C, Bellotti E, Brennan K F, Goano M, Ghillino E, Ghione G, Albrecht J D and Ruden P P 2001 IEEE Transactions on Electron Devices 48 535
[7]	Parvesh G, Sujata P, Subhasis H, Mridula G, Gupta R S 2007 Microelectron. J. 38 848
[8]	Liu J, Hao Y, Feng Q, Wang C, Zhang J C, Guo L L 2007 Acta Phys. Sin. 56 3483 (in Chinese) [刘杰、郝跃、冯倩、王冲、张进城、郭亮良 2008 56 3483]
[9]	Zhang J F, Wang C, Zhang J C, Hao Y 2006 Chin. Phys. 15 1060
[10]	Zhang J F, Zhang J C, Hao Y 2004 Chin. Phys. 13 1334
[11]	Wang X H, Zhao M, Liu X Y, Pu Y, Zheng Y K, Wei K 2010 Chin. Phys. B 19 097302
[12]	Delagebeaudeuf D, Linh N T 1982 IEEE Transactions on Electron Devices 29 955
[13]	Aziz M A, El-Banna M 1996 Thirteenth National Radio Science Conference Cairo, Egypt, March 19—21,1996 p547
[14]	Frank S, Sankar D S 1984 Phys. Rev. B 30 840
[15]	Norris G B, Look D C, Kopp W, Klem J, Morkoc H 1985 Appl. Phys. Lett. 47 423
[16]	Kwangman P, Hong Bae K, Kae Dal K 1987 IEEE Transactions on Electron Devices 34 2422
[17]	Cazaux J L, Ng G I, Pavlidis D, Chau H F 1988 IEEE Transactions on Electron Devices 35 1223
[18]	Ando Y, Itoh T 1988 IEEE Transactions on Electron Devices 35 2295
[19]	Shey A J, Ku W H 1988 IEEE Electron Device Letters 9 624
[20]	Kokorev M F, Maleev N A 1996 Solid-State Electronics 39 297
[21]	Liu W L, Chen Y L, Balandin A A, Wang K L 2006 Journal of Nanoelectronics and Optoelectronics 1 258
[22]	Moloney M J, Ponse F, Morkoc H 1985 IEEE Transactions on Electron Devices 32 1675
[23]	Karmalkar S 1997 IEEE Transactions on Electron Devices 44 862
[24]	Ketterson A A, Morkoc H 1986 IEEE Transactions on Electron Devices 33 1626
[25]	Anwar A F M, Liu K W 1993 IEEE Transactions on Electron Devices 40 1174
[26]	Ando Y, Itoh T 1990 IEEE Transactions on Electron Devices 37 67
[27]	Tong K Y 1991 Electronics Letters 27 668
[28]	Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T, Sullivan G J, Redwing J M 2000 Journal of Applied Physics 87 8070
[29]	Khondker A N, Anwar A F M, Islam M A, Limoncelli L, Wilson D 1986 IEEE Transactions on Electron Devices 33 1825

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