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In this paper, we design and fabricate a new test structure of bipolar device. A gate is deposited on the oxide layer covering the base region of normal lateral pnp bipolar transistor. The characteristic of drain current (collector current) versus the gate voltage is recorded by sweeping the voltage applied to the gate, then the subthreshold-current technique is used to separate the radiation induced oxide trapped charges and interface traps in the gate controlled lateral pnp bipolar transistor during 60Co- irradiation. The test structure and the measurement of the bipolar transistor used in the experiment are introduced in detail in this paper.
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Keywords:
- subthreshold-current technique /
- gate control /
- lateral pnp bipolar transistor /
- charge separation
[1] Enlow E W, Pease R L, Combs W, Schrimpf R D, Nowlin R N 1991 IEEE Trans. Nucl. Sci. 38 1342
[2] Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A, DeLaus M, Winokur P S. Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871
[3] Hjalmarson H P, Pease R L, Witczak S C, Shaneyfelt M R, Schwank J R, Edwards A H, Hembree C E, Mattsson T R 2003 IEEE Trans. Nucl. Sci. 50 1901
[4] Zhang Y Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 2434 (in Chinese) [张廷庆, 刘传洋, 刘家璐, 王剑屏, 黄智, 徐娜军, 何宝平, 彭宏论, 姚育娟 2001 50 2434]
[5] He B P, Guo H X, Gong J C, Wang G Z, Luo Y H, Li Y H 2004 Acta Phys. Sin. 53 3125 (in Chinese) [何宝平, 郭红霞, 龚建成, 王桂珍, 罗尹虹, 李永宏 2004 53 3125]
[6] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X G, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展, 陆妩, 任迪远, 王义元, 郭旗, 余学锋, 何承发 2009 58 5572]
[7] He B P, Yao Z B 2010 Acta Phys. Sin. 59 1985 (in Chinese) [何宝平, 姚志斌 2010 59 1985]
[8] Chen X J, Barnaby H J,Pease R L, Schrimpf R D, Platteter D G, Dunham G 2004 IEEE Trans. Nucl. Sci. 51 3178
[9] Chen X J, Barnaby H J, Pease R L, Schrimpf R D, Platteter D, Shaneyfelt M, Vermeire B 2005 IEEE Trans. Nucl. Sci. 52 2245
[10] Ball D R, Schrimpf R D, Barnaby H J 2002 IEEE Trans. Nucl. Sci. 49 3185
[11] Chen X J, Barnaby H J, Schrimpf R D, Fleetwood D M, Pease R L, Platteter D G, Dunham G W 2006 IEEE Trans. Nucl. Sci. 53 3649
[12] Chen X J, Barnaby H J, Vermeire B, Holbert K, Wright D, Pease R L, Dunham G, Platteter D G, Seiler J, McClure S, Adell P 2007 IEEE Trans. Nucl. Sci. 54 1913
[13] Chen X J, Barnaby H J, Vermeire B, Holbert K E, Wright D, Pease R L, Schrimpf R D, Fleetwood D M, Pantelides S T, Shaneyfelt M R, Adell P 2008 IEEE Trans. Nucl. Sci. 55 3032
[14] Minson E, Sanchez I, Barnaby H J, Pease R L, Platteter D G, Dunham G 2004 IEEE Trans. Nucl. Sci. 51 3723
[15] Hart Arthur R, Smyth J B, van Lint, Victor A J, Snowden D P, Leadon Roland E 1978 IEEE Trans. Nucl. Sci. 25 1502
[16] Kosier S L, Shrimpf R D, Nowlin R N, Fleetwood D M, DeLaus M, Pease R L, CombsWE,Wei A, Chai F 1993 IEEE Trans. Nucl. Sci. 40 1276
[17] McWhorter P J, Winokur P S 1986 Appl Phys. Lett. 48 133
[18] Gaitan M, Russell T J 1984 IEEE Trans. Nucl. Sci. 31 1256
[19] Pease R, Emily D, Boesch H E 1985 IEEE Trans. Nucl. Sci. 32 3946
[20] He Y J, Shi Q, Li B, Luo H W, Lin L 2006 Electronic Product Reliability and Environmental Testing 24 26 (in Chinese) [何玉娟, 师谦, 李斌, 罗宏伟, 林丽 2006 电子产品可靠性与环境试验 24 26]
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[1] Enlow E W, Pease R L, Combs W, Schrimpf R D, Nowlin R N 1991 IEEE Trans. Nucl. Sci. 38 1342
[2] Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A, DeLaus M, Winokur P S. Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871
[3] Hjalmarson H P, Pease R L, Witczak S C, Shaneyfelt M R, Schwank J R, Edwards A H, Hembree C E, Mattsson T R 2003 IEEE Trans. Nucl. Sci. 50 1901
[4] Zhang Y Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 2434 (in Chinese) [张廷庆, 刘传洋, 刘家璐, 王剑屏, 黄智, 徐娜军, 何宝平, 彭宏论, 姚育娟 2001 50 2434]
[5] He B P, Guo H X, Gong J C, Wang G Z, Luo Y H, Li Y H 2004 Acta Phys. Sin. 53 3125 (in Chinese) [何宝平, 郭红霞, 龚建成, 王桂珍, 罗尹虹, 李永宏 2004 53 3125]
[6] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X G, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展, 陆妩, 任迪远, 王义元, 郭旗, 余学锋, 何承发 2009 58 5572]
[7] He B P, Yao Z B 2010 Acta Phys. Sin. 59 1985 (in Chinese) [何宝平, 姚志斌 2010 59 1985]
[8] Chen X J, Barnaby H J,Pease R L, Schrimpf R D, Platteter D G, Dunham G 2004 IEEE Trans. Nucl. Sci. 51 3178
[9] Chen X J, Barnaby H J, Pease R L, Schrimpf R D, Platteter D, Shaneyfelt M, Vermeire B 2005 IEEE Trans. Nucl. Sci. 52 2245
[10] Ball D R, Schrimpf R D, Barnaby H J 2002 IEEE Trans. Nucl. Sci. 49 3185
[11] Chen X J, Barnaby H J, Schrimpf R D, Fleetwood D M, Pease R L, Platteter D G, Dunham G W 2006 IEEE Trans. Nucl. Sci. 53 3649
[12] Chen X J, Barnaby H J, Vermeire B, Holbert K, Wright D, Pease R L, Dunham G, Platteter D G, Seiler J, McClure S, Adell P 2007 IEEE Trans. Nucl. Sci. 54 1913
[13] Chen X J, Barnaby H J, Vermeire B, Holbert K E, Wright D, Pease R L, Schrimpf R D, Fleetwood D M, Pantelides S T, Shaneyfelt M R, Adell P 2008 IEEE Trans. Nucl. Sci. 55 3032
[14] Minson E, Sanchez I, Barnaby H J, Pease R L, Platteter D G, Dunham G 2004 IEEE Trans. Nucl. Sci. 51 3723
[15] Hart Arthur R, Smyth J B, van Lint, Victor A J, Snowden D P, Leadon Roland E 1978 IEEE Trans. Nucl. Sci. 25 1502
[16] Kosier S L, Shrimpf R D, Nowlin R N, Fleetwood D M, DeLaus M, Pease R L, CombsWE,Wei A, Chai F 1993 IEEE Trans. Nucl. Sci. 40 1276
[17] McWhorter P J, Winokur P S 1986 Appl Phys. Lett. 48 133
[18] Gaitan M, Russell T J 1984 IEEE Trans. Nucl. Sci. 31 1256
[19] Pease R, Emily D, Boesch H E 1985 IEEE Trans. Nucl. Sci. 32 3946
[20] He Y J, Shi Q, Li B, Luo H W, Lin L 2006 Electronic Product Reliability and Environmental Testing 24 26 (in Chinese) [何玉娟, 师谦, 李斌, 罗宏伟, 林丽 2006 电子产品可靠性与环境试验 24 26]
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