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Transparent thin-film transistor (TFT) with ZnO film as a channel layer is fabricated at room temperature. ZnO film has a high absorption in the UV region and ZnO-TFT is sensitive to the UV illumination. We investigate the ultraviolet photoresponse of ZnO-TFT and find that the illumination with 254 nm light results in an evident photoresponse. The residual conductivity is observed in ZnO channel even the UV light was removed one week before. The UV illumination can induce the formation of oxygen vacancy defects which will act as donors in ZnO channel.
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Keywords:
- ZnO /
- thin film transistors /
- ultraviolet photoresponse /
- residual conductivity
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[2] Tut T, Yelboga T, Ulker E, Ozbay E 2008 Appl. Phys. Lett. 92 103502
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[11] Yuan Z, Gao H, Xu L L, Chen T T, Lang Y 2012 Acta Phys. Sin. 61 057201 (in Chinese) [袁泽, 高红, 徐玲玲, 陈婷婷, 郎颖 2012 61 057201]
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[15] Liang S, Sheng H, Liu Y, Huo Z, Lu Y, Shen H 2001 J. Cryst. Growth 225 110
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[17] Jandow N N, Ibrahim K, Yam F K, Abu Hassan H, Thahab S M, Hamad O S 2010 Optoelectron Adv. Mat. 4 726
[18] Ohta H, Hirano M, Nakahara K, Maruta H, Tanabe T, Kamiya M, Kamiya T, Hosono H 2003 Appl. Phys. Lett. 83 1029
[19] Moon T H, Jeong M C, Lee W, Myoung J M 2005 Appl. Surf. Sci. 240 280
[20] Mandalapu L J, Yang Z, Xiu F X, Zhao D T, Liu J L 2006 Appl. Phys. Lett. 88 092103
[21] Zhang J, Li X F, Lu J G, Ye Z Z, Gong L, Wu P, Huang J, Zhang Y Z, Chen L X, Zhao B H 2011 J. Appl. Phys. 110 084509
[22] Bae H S, Yoon M H, Kim J H, Im S 2003 Appl. Phys. Lett. 83 5313
[23] Lany S, Zunger A 2007 Phys. Rev. Lett. 98 045501
[24] Janotti A, van de Walle C G 2005 Appl. Phys. Lett. 87 122102
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[1] Sandvik P, Mi K, Shahedipour F, McClintock R, Yasan A, Kung P, Razeghi M 2001 J. Cryst. Growth 231 366
[2] Tut T, Yelboga T, Ulker E, Ozbay E 2008 Appl. Phys. Lett. 92 103502
[3] Liao M Y, Koide Y, Alvarez J 2007 Appl. Phys. Lett. 90 123507
[4] Chiou Y Z 2005 J. Electrochem. Soc. 152 G639
[5] Zhou Y, Ahyi C, Tin C C, Williams J, Park M, Kim D J, Cheng A J, Wang D, Hanser A, Preble E A, Williams N M, Evans K 2007 Appl. Phys. Lett. 90 121118
[6] Zhao D G, Zhou M, Zuo S H 2007 Acta Phys. Sin. 56 5517 (in Chinese) [赵德刚, 周 梅, 左淑华, 2007 56 5517]
[7] Zhou M, Zhao D G 2009 Acta Phys. Sin. 58 7260 (in Chinese) [周 梅, 赵德刚 2009 58 7260]
[8] Lin T K, Chang S J, Su Y K, Chiou Y Z, Wang C K, Chang C M, Huang B R 2005 IEEE T. Electron. Dev. 52 121
[9] Chang S J, Lin T K, Su Y K, Chiou Y Z, Wang C K, Chang S P, Chang C M, Tang J J, Huang B R 2006 Mat. Sci. Eng. B Solid. 127 164
[10] Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 052901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 61 052901]
[11] Yuan Z, Gao H, Xu L L, Chen T T, Lang Y 2012 Acta Phys. Sin. 61 057201 (in Chinese) [袁泽, 高红, 徐玲玲, 陈婷婷, 郎颖 2012 61 057201]
[12] Young S J, Ji L W, Chang S J, Du X L 2007 J. Electrochem. Soc. 154 H26
[13] Bae H S, Choi C M, Kim J H, Im S 2005 J. Appl. Phys. 97 076104
[14] Liu Y, Gorla C R, Liang S, Emanetoglu N, Lu Y, Shen H, Wraback M 2000 J. Electron. Mater. 29 69
[15] Liang S, Sheng H, Liu Y, Huo Z, Lu Y, Shen H 2001 J. Cryst. Growth 225 110
[16] Jin Y Z, Wang J P, Sun B Q, Blakesley J C, Greenham N C 2008 Nano Lett. 8 1649
[17] Jandow N N, Ibrahim K, Yam F K, Abu Hassan H, Thahab S M, Hamad O S 2010 Optoelectron Adv. Mat. 4 726
[18] Ohta H, Hirano M, Nakahara K, Maruta H, Tanabe T, Kamiya M, Kamiya T, Hosono H 2003 Appl. Phys. Lett. 83 1029
[19] Moon T H, Jeong M C, Lee W, Myoung J M 2005 Appl. Surf. Sci. 240 280
[20] Mandalapu L J, Yang Z, Xiu F X, Zhao D T, Liu J L 2006 Appl. Phys. Lett. 88 092103
[21] Zhang J, Li X F, Lu J G, Ye Z Z, Gong L, Wu P, Huang J, Zhang Y Z, Chen L X, Zhao B H 2011 J. Appl. Phys. 110 084509
[22] Bae H S, Yoon M H, Kim J H, Im S 2003 Appl. Phys. Lett. 83 5313
[23] Lany S, Zunger A 2007 Phys. Rev. Lett. 98 045501
[24] Janotti A, van de Walle C G 2005 Appl. Phys. Lett. 87 122102
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