Kinetics study of ions in conductive filament growth process of electrochemical metallization resistive memory

Ke Qing; Dai Yue-Hua

doi:10.7498/aps.72.20231232

Abstract

In this work, a system of modified Mott-Gurney differential equations is based on Arrhenius’ law and the overpotential theory of ionic motion in bipolar electrochemical metallization (ECM) resistive devices. The average displacement of ions is solved by the modified Mott-Gurney equation. Then, the relation between the average displacement and the growth length of the conductive filament is obtained by a geometric model based on cells. The equation of applied voltage versus Forming/Set time and the equation of length of conductive filament growth versus time are deduced by using this relation.In this work, an algorithm for extracting kinetic parameters of ions in a bipolar ECM device is also proposed. By using this algorithm, the characteristics of the applied voltage versus Forming/Set time for Ag/γ-AgI/Pt, Ag/TiO₂/Pt, Ag/GeS₂/W, and Cu/SiO₂/Au devices are calculated and the calculation results are consistent with experimental data. It is found that in the Forming/Set process, the jump step of silver ion is the lattice constant along the c direction of a unit cell of the crystal for TiO₂ and the lattice constant of the cubic, a, for γ-AgI. These results are explained in the following. In a unit cell of the two crystals there are some tetrahedral and octahedral interstitial sites. The cationic motion path consists of alternating octahedral and tetrahedral sites or some octahedral sites. The cation jumps from tetrahedron to octahedron to tetrahedron, etc. in the γ-AgI with coplanar polyhedron and from octahedron to octahedron in the TiO₂ with edge shared octahedron. In GeS₂ crystal, it is found that the jump step of silver ions is the lattice constant in the c direction of a unit cell. Owing to the periodicity of the lattice, the pathways of the ion motion in the three materials can be expressed by a periodic potential barrier each. For the jump situation of the copper ion in amorphous SiO₂, the jump step of copper ions is calculated to be 1.57 times the length of the O—O bond, and the jump pathway can also be explained by a periodic potential barrier.By introducing the cosine potential barrier, the ionic activation frequency, potential barrier height, ionic mobility and diffusion coefficient, and characteristics of the conductive filament growth versus time in several devices are calculated. The criteria of selecting dielectric materials for bipolar ECM devices are discussed by using these data. It is found that the standards for selecting dielectric materials of bipolar ECM devices are the ion activation energy ≤0.5 eV, preferably between 0.1–0.2eV, and the DC conductivity as close to 10^–4 Ω^–1·cm^–1 as possible.

Keywords:

Authors and contacts

School of Integrated Circuits , Anhui University, Hefei 230601, China

Corresponding author: Dai Yue-Hua, 1097683210@qq.com

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61874001, 62004001, 62274002).

FullText HTML : translate this paragraph

References

[1]	Aziza H, Jeremy P P , Bazzi H, Canet P, Moreau M, Marca V D, Harb A T 2020 IEEE Trans. Nanotechnol. 19 214 Google Scholar
[2]	Jameson J R, Gilbert N, Koushan F, Wang J, Hollmer S, Kozicki M 2012 Appl. Phys. Lett. 100 023505 Google Scholar
[3]	Yu S, Wong P H S 2011 IEEE Trans. Electron. Devices 58 1352 Google Scholar
[4]	Hurk J V D, Menzel S, Waser R, Valov I 2015 J. Phys. Chem. C 119 18678 Google Scholar
[5]	Covi E, Wang W, Lin Y H, Farronato M, Ambrosi E, Lelmini D 2021 IEEE Trans. Electron. Devices 68 4335 Google Scholar
[6]	Valov I, Waser R, Jameson J R, Kozicki M N 2011 Nanotechnology 22 254003 Google Scholar
[7]	Lin S, Zhao L, Zhang J Y, Wu H Q, Qian H, Yu Z P 2012 IEEE 2012 International Electron Devices Meeting (IEDM) San Fransisco, USA, December 10−12, 2012 p593
[8]	Mott P F, Gurney R W (translated by Pan J S, Li W X) 1953 Electronic Processes in Ionic Crysrals (2nd Ed.) (Bejing: Science Press) p51 (in Chinse) [莫特N F, 格尼R W 著 (潘金声, 李文雄译) 1959 离子晶体中的电子过程 (北京: 科学出版社) 第51页 Mott P F, Gurney R W (translated by Pan J S, Li W X) 1953 Electronic Processes in Ionic Crysrals (2nd Ed.) (Bejing: Science Press) p51 (in Chinse) [莫特N F, 格尼R W 著 (潘金声, 李文雄译) 1959 离子晶体中的电子过程 (北京: 科学出版社) 第51页]
[9]	Zhu J D, Zhang T, Yang Y C, Huang R 2020 Appl. Phys. Rev. 7 011312 Google Scholar
[10]	Zhang M Y, Wang G M, Long S B, et al. 2015 IEEE Electron. Device Lett. 36 1303 Google Scholar
[11]	Anderson O L, Stuart D A 1954 J. Am. Ceram. Soc. 37 573 Google Scholar
[12]	Patnaik J R G, Sunandana C S 1998 J. Phys. Chrn, Solids 59 1059 Google Scholar
[13]	Tapperrtzhofen S, Valov I, Waser R 2012 Nanotechnology 23 145703 Google Scholar
[14]	Po C, Liao H W, Gan J Y, et al. 2010 ACS Nanotech. 4 5414 Google Scholar
[15]	Bermard Y, Gonon P, Jousseaume V 2010 J. Appl. Phys. Lett. 96 193502 Google Scholar
[16]	哈根穆勒P 著 (陈立泉, 薛荣坚译) 1984 固体电解质一般原理、特征、材料和应用 (北京: 科学出版社) 第29页 Hagenmuller P (translated by Chen L Q, Xue R J) 1984 Solid Electrolytes General Principles, Characterization, Materials, Applications (Bejing: Science Press) p29
[17]	Bid A, Bora A, Raychaudhuri A 2006 Phys. Rev. B 74 035426 Google Scholar
[18]	Mehrer H 2014 Diffusion in Solids: Fundamentals, Methods, Materials, Diffusion-Controlled Process (New York: Springer Berlin) pp62, 63, 475
[19]	刘明 2018新型阻变存储技术 (北京: 科学出版社) 第88页 Liu M 2018 New Resistive Variable Storage Technology (Beijing: Science Press) p88
[20]	史美仑 1982固体电解质 (重庆: 科学技术文献出版社重庆分社) 第242, 243页 Shi M L 1982 Solid Electrolyte (Chongqing: Chongqing Branch of Science and Technology Literature Press) pp242, 243
[21]	Ajayi O B, Nagel L E, Raistrick I D, Huggins R A 1976 J. Phys. Chem. Solids 37 167 Google Scholar
[22]	冯端, 冯晓彤 2005熵的世界 (北京: 科学出版社) 第213页 Feng D, Feng S T 2005 The world of Entropy (Bejing: Science Press) p213
[23]	Nowotny M K, Bak T, Nowotny J 2006 J. Phys. Chem. B 110 16271 Google Scholar
[24]	Palma G, Vianello E, Cagli C, Molas G, Reyboz M, Blaise P, B. Salvo D, Longnos F, Dahmani F 2012 4th IEEE International Memory Workshop Milan, Italy, May 20−23, 2012 p1
[25]	管绍茂, 王迅 1981半导体表面钝化技术及其应用 (北京: 国防工业出版社) 第70页 Guan S M, Wang X 1981 Semiconductor Surface Passivation Technology and its Application (Bejing: National Defence Industry Press) p70
[26]	哈根穆勒P 著 (陈立泉, 薛荣坚译) 1984 固体电解质一般原理、特征、材料和应用 (北京: 科学出版社) 第7页 Hagenmuller P (translated by Chen L Q, Xue R J) 1984 Solid Electrolytes General Principles, Characterization, Materials, Applications (Bejing: Science Press) p7
[27]	Gao Y R, Adelaide M, Nolan M, Du P, Wu Y F, Yang C, Chen Q L, Mo Y, Bo S H 2020 Chem. Rev. 120 5954 Google Scholar
[28]	Shen Z J, Zhao C , Qi Y F, Xu W Y, Liu T, Mitrovic I Z, Yang L, Zhao C 2020 Nanomaterials 10 1437 Google Scholar
[29]	Wang W, Covi E K, Lin Y H , Ambrosi E, Milozzi A D, Sbandati C, Farronato M, Ielmini D 2021 IEEE Trans. Electron. Devices 68 4342 Google Scholar
[30]	Saadi M, Gonon P, Vallée1 C, Jomni F, Jalaguier E 2020 J. Mater. Sci.-Mater. El. 31 13487 Google Scholar

Cited By

图 1 (a) 从阴极往阳极生长的导电细丝示意图; (b)阳离子跃迁势垒的示意图

Figure 1. (a) Schematic diagram of the conductive filament that grows from the anode to the cathode; (b) schematic diagram of the potential barrier after applying electric field.

DownLoad: Full-Size Img PowerPoint

图 2 基于cell 的模型

Figure 2. Model based on cells.

DownLoad: Full-Size Img PowerPoint

图 3 从阳极往阴极生长的导电细丝示意图

Figure 3. Conductive filament that grows from the cathode to the anode.

DownLoad: Full-Size Img PowerPoint

图 4 (a) Ag⁺在γ-AgI膜中的跃迁速率计算图, 跃迁速率的平均值是2.0381×10⁸ s^–1, 最大误差是跃迁速率的3个计算值对于平均值的最大误差; (b) Ag/γ-AgI/Pt的Forming/Set时间与不同外加电压的关系, 其中实验数据见文献[13]

Figure 4. (a) Calculative results of the jump rate for the Ag⁺ in γ-AgI film. The average value of three jump rates is 2.0381×10⁸ s^–1 and the maximum error is the maximum error for three jump rates relative to the average value. (b) The applied voltage of the device versus the Forming/Set time. The experimental data see Ref. [13].

DownLoad: Full-Size Img PowerPoint

图 5 器件的外加电压与Forming/Set时间(初始导电细丝长度L₀ = 0 nm; 图中插图是跃迁速率的计算图)　(a) Ag/GeS₂/W; (b) Ag/TiO₂/Pt; (c) Cu/SiO₂/Au

Figure 5. Applied voltage of the device versus the Forming/Set time: (a) Ag/GeS₂/W; (b) Ag/TiO₂/Pt; (c) Cu/SiO₂/Au. The L₀ is 0 nm. The inset in the figure is the calculating chart of the jump rate.

DownLoad: Full-Size Img PowerPoint

图 6 (a) Ag+离子在γ-AgI中跃迁路径示意图, 红线是离子运动路径, 图中黑球是I^–; (b) 离子跃迁遇到的势垒

Figure 6. (a) Schematic diagram of the jump paths for Ag⁺ in the γ-AgI. The red line is the motion pathway of the cation and the black sphere is the I^–. (b) The potential barrier encountered in the process of the ionic jump.

DownLoad: Full-Size Img PowerPoint

图 7 余弦电势示意图

Figure 7. Schematic diagram of the cosine potential barrier.

DownLoad: Full-Size Img PowerPoint

图 8 一价离子Ag⁺和Cu⁺的参数之间的联系　(a)势垒宽度与激活频率的关系; (b)势垒高度与迁移率的关系

Figure 8. Changes for the parameters of the Ag⁺ and Cu⁺: (a) The potential barrier width versus activation frequency; (b) the potential barrier height versus ionic mobility.

DownLoad: Full-Size Img PowerPoint

图 9 导电细丝生长长度-时间计算结果　(a) Ag/γ-AgI/Pt的细丝生长长度与时间关系; (b) Ag/γ-AgI/Pt的场强与细丝生长长度的关系; (c) Ag/γ-AgI/Pt, Ag/GeS₂/W和 Ag/TiO₂/Pt细丝生长长度与时间的关系

Figure 9. Relation between the filament growth length versus time in the Ag/γ-AgI/Pt device: (a) Characteristics of the growth length of the conductive filament versus time; (b) schematic diagram of the growth length of the conductive filament versus intensity of the electric field in the Ag/γ-AgI/Pt; (c) schematic diagram of the growth length of the conductive filament versus time in the Ag/γ-AgI/Pt, Ag/GeS₂/W, and Ag/TiO₂/Pt devices.

DownLoad: Full-Size Img PowerPoint

表 1 ECM器件结构

Table 1. Structures of ECM devices.

器件	结构	介质长度L/nm	离子	温度/K	实验数据来源
Ag/γ-AgI/Pt	Stack	30	Ag⁺	300	Ref. [13]
Ag/TiO₂/Pt	Planar	550	Ag⁺	300	Ref. [14]
Ag/GeS₂/W	Stack	40	Ag⁺	300	Ref. [2]
Cu/SiO₂/Au	Stack	20	Cu⁺, Cu²⁺	300	Ref. [15]

DownLoad: CSV

表 2 跃迁步长、跃迁速率、阈值电压和σ的计算结果

Table 2. Calculative results of the jump step, jump rate, threshold voltage, and σ

介质	晶胞类型	晶格常数/nm	跃迁步长 a_s/nm	跃迁速率 S_A/s^–1	V_T/V	σ	S_A 的误差
γ-AgI	fcc	a = 0.65	0.65	2.0381×10⁺⁸	0.2941	0.2769	4.82%
TiO₂	Rutile	a = 0.4594, c = 0.2956	0.2956	1.0906×10^–6	18.5	0.0082	2.78%
GeS₂	Monoclinic crystal	a = 0.672, b = 1.6101, c = 1.1436	1.1436	4.6912×10⁺³	0.43	0.45	1.75%
SiO₂ (amorphous)	Tetrahedral	a = 0.227	0.357	Cu⁺: 13.3317, Cu²⁺: 7.8867	Cu⁺: 0.0461, Cu²⁺: 0.0461	Cu⁺: 0.0191, Cu²⁺: 0.0398	Cu⁺: 2.97% Cu²⁺: 1.60%

DownLoad: CSV

表 3 离子在介质中的动力学参数

Table 3. Parameters of ionic kinenics in the dielectric.

电介质	离子	a_s/nm	ν/s^–1	U₀/eV	μ_ion/(cm²·V^–1·s^–1)	D_ion/(cm²·s^–1)	σ_d/(Ω·cm)^–1
γ-AgI	Ag⁺	0.65	6.3193×10¹¹	0.1584	3.3119×10^–5	8.6110×10^–7	10^{–5 [13]}
TiO₂	Ag⁺	0.2956	3.5913×10¹²	1.0591	3.6652×10^–20	9.9257×10^–22	2×10^–8^[23], ≈10^–5* ^[23]
GeS₂	Ag⁺	1.1436	5.5495×10¹¹	0.4346	2.3597×10^–9	6.1352×10^–11	1.25×10^{–4 [24]}
SiO₂	Cu⁺	0.357	2.9321×10¹²	0.6347	6.5350×10^–13	1.6995×10^–14	1.76×10^{–15 [25]}
SiO₂	Cu²⁺	0.357	2.9643×10¹²	0.6487	7.7319×10^–13	1.0052×10^–14	1.76×10^{–15 [25]}
注: σ_d是电介质的电导率, TiO₂电导率各向异性, 是垂直c轴的电导率, *是平行c轴的电导率.

DownLoad: CSV

map

[1]	Aziza H, Jeremy P P , Bazzi H, Canet P, Moreau M, Marca V D, Harb A T 2020 IEEE Trans. Nanotechnol. 19 214 Google Scholar
[2]	Jameson J R, Gilbert N, Koushan F, Wang J, Hollmer S, Kozicki M 2012 Appl. Phys. Lett. 100 023505 Google Scholar
[3]	Yu S, Wong P H S 2011 IEEE Trans. Electron. Devices 58 1352 Google Scholar
[4]	Hurk J V D, Menzel S, Waser R, Valov I 2015 J. Phys. Chem. C 119 18678 Google Scholar
[5]	Covi E, Wang W, Lin Y H, Farronato M, Ambrosi E, Lelmini D 2021 IEEE Trans. Electron. Devices 68 4335 Google Scholar
[6]	Valov I, Waser R, Jameson J R, Kozicki M N 2011 Nanotechnology 22 254003 Google Scholar
[7]	Lin S, Zhao L, Zhang J Y, Wu H Q, Qian H, Yu Z P 2012 IEEE 2012 International Electron Devices Meeting (IEDM) San Fransisco, USA, December 10−12, 2012 p593
[8]	Mott P F, Gurney R W (translated by Pan J S, Li W X) 1953 Electronic Processes in Ionic Crysrals (2nd Ed.) (Bejing: Science Press) p51 (in Chinse) [莫特N F, 格尼R W 著 (潘金声, 李文雄译) 1959 离子晶体中的电子过程 (北京: 科学出版社) 第51页 Mott P F, Gurney R W (translated by Pan J S, Li W X) 1953 Electronic Processes in Ionic Crysrals (2nd Ed.) (Bejing: Science Press) p51 (in Chinse) [莫特N F, 格尼R W 著 (潘金声, 李文雄译) 1959 离子晶体中的电子过程 (北京: 科学出版社) 第51页]
[9]	Zhu J D, Zhang T, Yang Y C, Huang R 2020 Appl. Phys. Rev. 7 011312 Google Scholar
[10]	Zhang M Y, Wang G M, Long S B, et al. 2015 IEEE Electron. Device Lett. 36 1303 Google Scholar
[11]	Anderson O L, Stuart D A 1954 J. Am. Ceram. Soc. 37 573 Google Scholar
[12]	Patnaik J R G, Sunandana C S 1998 J. Phys. Chrn, Solids 59 1059 Google Scholar
[13]	Tapperrtzhofen S, Valov I, Waser R 2012 Nanotechnology 23 145703 Google Scholar
[14]	Po C, Liao H W, Gan J Y, et al. 2010 ACS Nanotech. 4 5414 Google Scholar
[15]	Bermard Y, Gonon P, Jousseaume V 2010 J. Appl. Phys. Lett. 96 193502 Google Scholar
[16]	哈根穆勒P 著 (陈立泉, 薛荣坚译) 1984 固体电解质一般原理、特征、材料和应用 (北京: 科学出版社) 第29页 Hagenmuller P (translated by Chen L Q, Xue R J) 1984 Solid Electrolytes General Principles, Characterization, Materials, Applications (Bejing: Science Press) p29
[17]	Bid A, Bora A, Raychaudhuri A 2006 Phys. Rev. B 74 035426 Google Scholar
[18]	Mehrer H 2014 Diffusion in Solids: Fundamentals, Methods, Materials, Diffusion-Controlled Process (New York: Springer Berlin) pp62, 63, 475
[19]	刘明 2018新型阻变存储技术 (北京: 科学出版社) 第88页 Liu M 2018 New Resistive Variable Storage Technology (Beijing: Science Press) p88
[20]	史美仑 1982固体电解质 (重庆: 科学技术文献出版社重庆分社) 第242, 243页 Shi M L 1982 Solid Electrolyte (Chongqing: Chongqing Branch of Science and Technology Literature Press) pp242, 243
[21]	Ajayi O B, Nagel L E, Raistrick I D, Huggins R A 1976 J. Phys. Chem. Solids 37 167 Google Scholar
[22]	冯端, 冯晓彤 2005熵的世界 (北京: 科学出版社) 第213页 Feng D, Feng S T 2005 The world of Entropy (Bejing: Science Press) p213
[23]	Nowotny M K, Bak T, Nowotny J 2006 J. Phys. Chem. B 110 16271 Google Scholar
[24]	Palma G, Vianello E, Cagli C, Molas G, Reyboz M, Blaise P, B. Salvo D, Longnos F, Dahmani F 2012 4th IEEE International Memory Workshop Milan, Italy, May 20−23, 2012 p1
[25]	管绍茂, 王迅 1981半导体表面钝化技术及其应用 (北京: 国防工业出版社) 第70页 Guan S M, Wang X 1981 Semiconductor Surface Passivation Technology and its Application (Bejing: National Defence Industry Press) p70
[26]	哈根穆勒P 著 (陈立泉, 薛荣坚译) 1984 固体电解质一般原理、特征、材料和应用 (北京: 科学出版社) 第7页 Hagenmuller P (translated by Chen L Q, Xue R J) 1984 Solid Electrolytes General Principles, Characterization, Materials, Applications (Bejing: Science Press) p7
[27]	Gao Y R, Adelaide M, Nolan M, Du P, Wu Y F, Yang C, Chen Q L, Mo Y, Bo S H 2020 Chem. Rev. 120 5954 Google Scholar
[28]	Shen Z J, Zhao C , Qi Y F, Xu W Y, Liu T, Mitrovic I Z, Yang L, Zhao C 2020 Nanomaterials 10 1437 Google Scholar
[29]	Wang W, Covi E K, Lin Y H , Ambrosi E, Milozzi A D, Sbandati C, Farronato M, Ielmini D 2021 IEEE Trans. Electron. Devices 68 4342 Google Scholar
[30]	Saadi M, Gonon P, Vallée1 C, Jomni F, Jalaguier E 2020 J. Mater. Sci.-Mater. El. 31 13487 Google Scholar

[1]	Li Wei, Zhu Hui-Wen, Sun Tong, Qu Wen-Shan, Li Jian-Gang, Yang Hui, Gao Zhi-Xiang, Shi Wei, Wei Bin, Wang Hua. High endurance organic resistive switching memory based on 1, 2-dicyanobenzene and polymer composites. Acta Physica Sinica, 2023, 72(4): 048501. doi: 10.7498/aps.72.20221507
[2]	Wang Ying, Huang Hui-Xiang, Huang Xiang-Lin, Guo Ting-Ting. Resistive switching characteristics of HfO_x-based resistance random access memory under photoelectric synergistic regulation. Acta Physica Sinica, 2023, 72(19): 197201. doi: 10.7498/aps.72.20230797
[3]	Zhu Xiao-Qin, Hu Yi-Feng. Application of Ge₅₀Te₅₀/Zn₁₅Sb₈₅ nanocomposite multilayer films in high thermal stability and low power phase change memory. Acta Physica Sinica, 2020, 69(14): 146101. doi: 10.7498/aps.69.20200502
[4]	Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei. Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices. Acta Physica Sinica, 2020, 69(5): 056101. doi: 10.7498/aps.69.20191209
[5]	Guo Jia-Jun, Dong Jing-Yu, Kang Xin, Chen Wei, Zhao Xu. Effect of transition metal element X (X=Mn, Fe, Co, and Ni) doping on performance of ZnO resistive memory. Acta Physica Sinica, 2018, 67(6): 063101. doi: 10.7498/aps.67.20172459
[6]	Shen Jian-Xin, Shang Da-Shan, Sun Young. Fundamental circuit element and nonvolatile memory based on magnetoelectric effect. Acta Physica Sinica, 2018, 67(12): 127501. doi: 10.7498/aps.67.20180712
[7]	Yu Zhi-Qiang, Liu Min-Li, Lang Jian-Xun, Qian Kai, Zhang Chang-Hua. Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristor. Acta Physica Sinica, 2018, 67(15): 157302. doi: 10.7498/aps.67.20180425
[8]	Dai Yue-Hua, Pan Zhi-Yong, Chen Zhen, Wang Fei-Fei, Li Ning, Jin Bo, Li Xiao-Feng. Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study. Acta Physica Sinica, 2016, 65(7): 073101. doi: 10.7498/aps.65.073101
[9]	Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Guo Xiao-Qiang, Zhao Wen, Ding Li-Li, Wang Yuan-Ming. Angular dependence of proton single event multiple-cell upsets in nanometer SRAM. Acta Physica Sinica, 2015, 64(21): 216103. doi: 10.7498/aps.64.216103
[10]	Jiang Xian-Wei, Lu Shi-Bin, Dai Guang-Zhen, Wang Jia-Yu, Jin Bo, Chen Jun-Ning. Research of data retention for charge trapping memory by first-principles. Acta Physica Sinica, 2015, 64(21): 213102. doi: 10.7498/aps.64.213102
[11]	Jiang Ran, Du Xiang-Hao, Han Zu-Yin, Sun Wei-Deng. Cluster distribution for oxygen vacancy in Ti/HfO2/Pt resistive switching memory device. Acta Physica Sinica, 2015, 64(20): 207302. doi: 10.7498/aps.64.207302
[12]	Chen Ran, Zhou Li-Wei, Wang Jian-Yun, Chen Chang-Jun, Shao Xing-Long, Jiang Hao, Zhang Kai-Liang, Lü Lian-Rong, Zhao Jin-Shi. Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structure. Acta Physica Sinica, 2014, 63(6): 067202. doi: 10.7498/aps.63.067202
[13]	Pang Hua, Deng Ning. Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt resistive random access memory cell. Acta Physica Sinica, 2014, 63(14): 147301. doi: 10.7498/aps.63.147301
[14]	Rong Jia-Ling, Chen Yun-Han, Zhou Jie, Zhang Xue, Wang Li, Cao Jin. SPICE simulation of organic resistive memory with structure of ITO/polymethylmethacrylate/Al. Acta Physica Sinica, 2013, 62(22): 228502. doi: 10.7498/aps.62.228502
[15]	Zhu Jian-Yun, Liu Lu, Li Yu-Qiang, Xu Jing-Ping. Effect of annealing atmosphere on characteristics of MONOS with LaTiON or HfLaON as charge storage layer. Acta Physica Sinica, 2013, 62(3): 038501. doi: 10.7498/aps.62.038501
[16]	Yang Jin, Zhou Mao-Xiu, Xu Tai-Long, Dai Yue-Hua, Wang Jia-Yu, Luo Jing, Xu Hui-Fang, Jiang Xian-Wei, Chen Jun-Ning. Composite interfaces and electrode properties of resistive random access memory devices. Acta Physica Sinica, 2013, 62(24): 248501. doi: 10.7498/aps.62.248501
[17]	He Mei-Lin, Xu Jing-Ping, Chen Jian-Xiong, Liu Lu. Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer. Acta Physica Sinica, 2013, 62(23): 238501. doi: 10.7498/aps.62.238501
[18]	Wei Xiao-Ying, Hu Ming, Zhang Kai-Liang, Wang Fang, Liu Kai. Micro-structural and resistive switching properties of vanadium oxide thin films. Acta Physica Sinica, 2013, 62(4): 047201. doi: 10.7498/aps.62.047201
[19]	Wang Xiang, Huang Rui, Song Jie, Guo Yan-Qing, Chen Kun-Ji, Li Wei. Tunnelling and storage of charges in a-SiNx/nc-Si/a-SiNx structures. Acta Physica Sinica, 2011, 60(2): 027301. doi: 10.7498/aps.60.027301
[20]	Du Jian, Zhang Peng, Liu Ji-Hong, Li Jin-Liang, Li Yu-Xian. Spin-tunneling time and transport in a ferromagnetic/semiconductor/ferromagnetic heterojunction with a δ tunnel barrier. Acta Physica Sinica, 2008, 57(11): 7221-7227. doi: 10.7498/aps.57.7221

Catalog

Vol. 72, Issue 24 - 2023-12-20

Metrics

Abstract views: 2571
PDF Downloads: 72
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板