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Single event multiple-cell upsets (MCU) increase sharply as the feature size of semiconductor devices shrinks. MCU poses a large challenge on present radiation hardening technology and modeling test technique. Experimental study of the influence of proton incidence angle on single event multiple-cell upsets in 90 nm static random access memory (SRAM) for middle and high energy proton is carried out. The result shows that MCU percentage and multiplicity increase with increasing proton energy, and the MCU topological pattern presents a certain track-orientation characteristic along the trajectories of the incidence ion when the incidence proton is tilted along the X-direction or Y-direction. Single event upset (SEU) cross section has no evident angular dependence. There is some difference in proton MCU cross section between normal incidence and tilt angle incidence only for 30 MeV proton. Angular effect of proton MCU is associated with proton energy. Due to the lower efficiency of Monte-Carlo method in calculating proton MCU, a fast calculation method for cross section, which aims at single event MCU induced by proton nuclear reaction, is adopted. The binary cascade model in Geant4 toolkit serves as event generators in middle on high proton nuclear reaction. In terms of double differential scattering cross section of secondary particle from proton-material spallation reaction, proton MCU cross section is calculated through integration over the entire space of memory cells array. Based on the distribution of secondary particles, those spallation products with the highest linear energy transfer (LET) and longest range are revealed to emit preferentially in the forward direction, which is the root cause why the angular effect of proton-induced MCU exists. The angular dependence of single event MCU in nanometer SRAM depends strongly on proton energy and critical charge. The higher the proton energy is, the wider the angular distribution of secondary particle is, the greater the energy and LET value of the lateral scattered secondary particle is; and so the angular enhancement effect in MCU cross section for lower energy protons is greater than the higher energy protons. MCU cross section is more isotropic with the increase of the proton energy. Angular effect in MCU cross section becomes stronger with the increase of the critical charge for the same energy proton.
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Keywords:
- proton /
- nanometer SRAM /
- single event multiple-cell upsets /
- angular effect
[1] Giot D, Roche P, Gasiot G, Harboe-Sorensen R 2007 IEEE Trans. Nucl. Sci. 54 904
[2] Correas V, Saigné F, Sagnes B, Wrobel F, Boch J, Gasiot G, Roche P 2009 IEEE Trans. Nucl. Sci. 65 2050
[3] Lawrence R K, Kelly A T 2008 IEEE Trans. Nucl. Sci. 55 3367
[4] Giot D, Roche P, Gasiot G, Autran J L, Harboe-Sorensen R 2008 IEEE Trans. Nucl. Sci. 55 2048
[5] Tipon A D, Pellish J A, Hutson J M, Baumann R, Deng X, Marshall A, Xapsos M A, Kim H S, Friendlich M R, Campola M J, Seidleck C M, Label K A, Mendenhall M H, Reed R A, Schrimpf R D, Weller R A, Black J D 2008 IEEE Trans. Nucl. Sci. 56 2880
[6] Space Component Coordination Group 1995 ESA/SCC Basic Specification NO. 25100
[7] Koga R, Kolaskinski W A, Osborn J V, Elder J H, Chitty R 1988 IEEE Trans. Nucl. Sci. 35 1638
[8] Reed R A, Marshall P W, Kim Hak S, McNulty P J, Fodness B, Jordan T M, Reedy R, Tabbert C, Liu M S T, Heikkila W, Buchner S, Ladbury R, LaBel K A 2002 IEEE Trans. Nucl. Sci. 49 3038
[9] Buchner S, Campbell A, Reed R, Fodness B, Kuboyama S 2004 IEEE Trans. Nucl. Sci. 51 3270
[10] Ikedade N, Kuboyama S, Matsuda S, Handa T 2005 IEEE Trans. Nucl. Sci. 52 2200
[11] He C H, Yang H L, Geng B, Chen X H, Li G Z, Liu E K, Luo J S 2000 Nuclear Electronics & Detection Technology. 20 253 (in Chinese) [贺朝会, 杨海亮, 耿斌, 陈晓华, 李国政, 刘恩科, 罗晋生 2000 核电子学与探测技术 20 253]
[12] He C H, Chen X H, Li G Z 2002 Chinese Journal of Computation Physics 19 367 (in Chinese) [贺朝会, 陈晓华, 李国政 2002 计算物理 19 367]
[13] Wang Y M, Chen W, Guo H X, He B P, Luo Y H, Yao Z B, Zhang F Q, Zhang K Y, Zhao W 2010 Atomic Energy Science and Technology 44 1505 (in Chinese) [王园明, 陈伟, 郭红霞, 何宝平, 罗尹虹, 姚志斌, 张凤祁, 张科营, 赵雯 2010 原子能科学技术 44 1505]
[14] Wang T Q 2003 Ph. D. Dissertation (Changsha: National University of Defence Technology) (in Chinese) [王同权 2003 博士学位论文(长沙: 国防科学技术大学)]
[15] Folger G, Ivanchenko V, Wellisch J 2004 The European Physical Journal A-Hadrons and Nuclei 21 407
[16] Clemens M A 2012 Ph. D. Dissertation(Nashville: Vanderbilt University)
[17] Warren K M, Weller R A, Sierawski B D 2007 IEEE Trans. Nucl. Sci. 54 898
[18] Artola L, Velazco R, Hubert G, Duzellier S, Nuns T, Guerard B, Peronnard P, Mansour W, Pancher F, Bezerra F 2011 IEEE Trans. Nucl. Sci. 58 2644
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[1] Giot D, Roche P, Gasiot G, Harboe-Sorensen R 2007 IEEE Trans. Nucl. Sci. 54 904
[2] Correas V, Saigné F, Sagnes B, Wrobel F, Boch J, Gasiot G, Roche P 2009 IEEE Trans. Nucl. Sci. 65 2050
[3] Lawrence R K, Kelly A T 2008 IEEE Trans. Nucl. Sci. 55 3367
[4] Giot D, Roche P, Gasiot G, Autran J L, Harboe-Sorensen R 2008 IEEE Trans. Nucl. Sci. 55 2048
[5] Tipon A D, Pellish J A, Hutson J M, Baumann R, Deng X, Marshall A, Xapsos M A, Kim H S, Friendlich M R, Campola M J, Seidleck C M, Label K A, Mendenhall M H, Reed R A, Schrimpf R D, Weller R A, Black J D 2008 IEEE Trans. Nucl. Sci. 56 2880
[6] Space Component Coordination Group 1995 ESA/SCC Basic Specification NO. 25100
[7] Koga R, Kolaskinski W A, Osborn J V, Elder J H, Chitty R 1988 IEEE Trans. Nucl. Sci. 35 1638
[8] Reed R A, Marshall P W, Kim Hak S, McNulty P J, Fodness B, Jordan T M, Reedy R, Tabbert C, Liu M S T, Heikkila W, Buchner S, Ladbury R, LaBel K A 2002 IEEE Trans. Nucl. Sci. 49 3038
[9] Buchner S, Campbell A, Reed R, Fodness B, Kuboyama S 2004 IEEE Trans. Nucl. Sci. 51 3270
[10] Ikedade N, Kuboyama S, Matsuda S, Handa T 2005 IEEE Trans. Nucl. Sci. 52 2200
[11] He C H, Yang H L, Geng B, Chen X H, Li G Z, Liu E K, Luo J S 2000 Nuclear Electronics & Detection Technology. 20 253 (in Chinese) [贺朝会, 杨海亮, 耿斌, 陈晓华, 李国政, 刘恩科, 罗晋生 2000 核电子学与探测技术 20 253]
[12] He C H, Chen X H, Li G Z 2002 Chinese Journal of Computation Physics 19 367 (in Chinese) [贺朝会, 陈晓华, 李国政 2002 计算物理 19 367]
[13] Wang Y M, Chen W, Guo H X, He B P, Luo Y H, Yao Z B, Zhang F Q, Zhang K Y, Zhao W 2010 Atomic Energy Science and Technology 44 1505 (in Chinese) [王园明, 陈伟, 郭红霞, 何宝平, 罗尹虹, 姚志斌, 张凤祁, 张科营, 赵雯 2010 原子能科学技术 44 1505]
[14] Wang T Q 2003 Ph. D. Dissertation (Changsha: National University of Defence Technology) (in Chinese) [王同权 2003 博士学位论文(长沙: 国防科学技术大学)]
[15] Folger G, Ivanchenko V, Wellisch J 2004 The European Physical Journal A-Hadrons and Nuclei 21 407
[16] Clemens M A 2012 Ph. D. Dissertation(Nashville: Vanderbilt University)
[17] Warren K M, Weller R A, Sierawski B D 2007 IEEE Trans. Nucl. Sci. 54 898
[18] Artola L, Velazco R, Hubert G, Duzellier S, Nuns T, Guerard B, Peronnard P, Mansour W, Pancher F, Bezerra F 2011 IEEE Trans. Nucl. Sci. 58 2644
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