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中国物理学会期刊
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He Mei-Lin, Xu Jing-Ping, Chen Jian-Xiong, Liu Lu. Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layerJ. Acta Physica Sinica, 2013, 62(23): 238501. DOI: 10.7498/aps.62.238501
Citation: He Mei-Lin, Xu Jing-Ping, Chen Jian-Xiong, Liu Lu. Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layerJ. Acta Physica Sinica, 2013, 62(23): 238501. DOI: 10.7498/aps.62.238501
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Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer

Acta Phys. Sin., 2013, 62(23): 238501.
DOI: 10.7498/aps.62.238501
CSTR: 32037.14.aps.62.238501
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