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The a-SiNx/nc-Si/a-SiNx sandwiched structures are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on n-type Si substrate. The nc-Si layer in thickness of 5 nm is fabricated from hydrogen diluted silane gas by layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layer are 3 nm and 20 nm, respectively. Conductance-voltage and capacitance-voltage measurements are used to study the charges tunnelling and storage in the sandsiched structures. Distinct frequency-dependent conductance peaks due to charges tunneling into the nc-Si dots and capacitance-voltage hysteresis characteristic due to charges storage in the nc-Si dots are observed in the same sample. The experimental results demonstrate that by controlling the thickness of tunnel and control SiNx layers charges can be loaded onto nc-Si dots via tunnelling and be stored in a-SiNx/nc-Si/a-SiNx structures.
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Keywords:
- nc-Si dots /
- conductance peak /
- storage
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[5] Chen G, Hou X Y, Huang R, Liu C, Wang Y Y, Yu B, Zhang X 2008 Chin. Phys. B 17 685
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[9] Song J, Wang J M, Yu L W, Huang X F, Li W, Chen K J 2007 Res. Prog. Solid State Electron. 27 468 (in Chinese) [宋 捷、王久敏、余林蔚、黄信凡、李 伟、陈坤基 2007 固体电子学研究与进展 27 468]
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[11] Wang Q, Yue G Z, Li J, Han D 2000 Solid State Commun 113 175
[12] Montelius L, Tegenfeldt J O 1993 Appl. Phys. Lett. 62 2628
[13] Huang S, Banerjee S, Tung R T, Oda S 2003 J. Appl. Phys. 93 576
[14] Wu L C, Dai M, Huang X F, Li W, Chen K J 2004 J. Vac. Sci. Technol. B 22 678
[15] Wu L C, Huang X F, Shi J J, Dai M, Qiao F, Li W, Xu J, Chen K J 2003 Thin Solid Films 425 221
[16] Dai M, Chen K, Huang X F, Wu L C, Chen K J 2004 J. Appl. Phys. 95 640
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[1] Huang R, Wang D Q, Ding H L, Wang X, Chen K J, Xu J, Guo Y Q, Song J, Ma Z Y 2010 Opt. Express 18 1144
[2] Ashoori R C 1996 Nature 379 413
[3] Jia R, Li Z G, Liu M, Long S B, Lü J, Shi Y, Wang S Y 2007 Chin. Phys. 16 795
[4] Ding H L, Liu K, Wang X, Fang Z H, Huang J, Yu L W, Li W, Huang X F, Chen K J 2008 Acta Phys. Sin. 57 4482 (in Chinese) [丁宏林、刘 奎、王 祥、方忠慧、黄 健、余林蔚、李 伟、黄信凡、陈坤基 2008 57 4482]
[5] Chen G, Hou X Y, Huang R, Liu C, Wang Y Y, Yu B, Zhang X 2008 Chin. Phys. B 17 685
[6] Xu J, Chen K J, Feng D, Miyazaki S, Hirose M 1996 Solid State Commun. 99 269
[7] Zhang S K, Zhu H J, Lu F, Jiang Z M, Wang X 1998 Phys. Rev. Lett. 80 3340
[8] Yu W, Li Y C, Ding W G, Zhang J Y, Yang Y B, Fu G S 2008 Acta Phys. Sin. 57 3661 (in Chinese) [于 威、李亚超、丁文革、张江勇、杨彦斌、傅广生 2008 57 3661]
[9] Song J, Wang J M, Yu L W, Huang X F, Li W, Chen K J 2007 Res. Prog. Solid State Electron. 27 468 (in Chinese) [宋 捷、王久敏、余林蔚、黄信凡、李 伟、陈坤基 2007 固体电子学研究与进展 27 468]
[10] Hirano Y, Sato F, Aihara S, Saito N, Miyazaki S, Hirose M 2001 Appl. Phys. Lett. 79 2255
[11] Wang Q, Yue G Z, Li J, Han D 2000 Solid State Commun 113 175
[12] Montelius L, Tegenfeldt J O 1993 Appl. Phys. Lett. 62 2628
[13] Huang S, Banerjee S, Tung R T, Oda S 2003 J. Appl. Phys. 93 576
[14] Wu L C, Dai M, Huang X F, Li W, Chen K J 2004 J. Vac. Sci. Technol. B 22 678
[15] Wu L C, Huang X F, Shi J J, Dai M, Qiao F, Li W, Xu J, Chen K J 2003 Thin Solid Films 425 221
[16] Dai M, Chen K, Huang X F, Wu L C, Chen K J 2004 J. Appl. Phys. 95 640
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