退火工艺对LaTiON和HfLaON存储层金属-氧化物-氮化物-氧化物-硅存储器特性的影响

朱剑云; 刘璐; 李育强; 徐静平

doi:10.7498/aps.62.038501

摘要

采用反应溅射法, 分别制备以LaTiON, HfLaON为存储层的金属-氧化物-氮化物-氧化物-硅电容存储器, 研究了淀积后退火气氛(N2, NH3)对其存储性能的影响. 分析测试表明, 退火前LaTiON样品比HfLaON 样品具有更好的电荷保持特性, 但后者具有更大的存储窗口 (编程/擦除电压为+/-12 V时4.8 V); 对于退火样品, 由于NH3的氮化作用, NH3退火样品比N2退火样品表现出更快的编程/擦除速度、更好的电荷保持特性和疲劳特性. 当编程/擦除电压为+/-12 V时, NH3退火HfLaON样品的存储窗口为3.8 V, 且比NH3退火LaTiON样品具有更好的电荷保持特性和疲劳特性.

关键词:

Abstract

Charge-trapping memory capacitor with LaTiON or HfLaON serving as charge storage layer is fabricated by reactive sputtering method, and influences of post-deposition annealing (PDA) in NH3 or N2 ambient on its memory characteristics are investigated. It is found that before PDA, the LaTiON sample exhibits better retention characteristic than the HfLaON sample, but the later shows larger memory window (4.8 V at +/-12 V/1 s), and after PDA, the NH3-annealed sample has faster program/erase speed, better retention and endurance properties than the N2-annealed sample, owing to nitridation role of NH3. Furthermore, the HfLaON sample with PDA in NH3achieves a large memory window of 3.8 V at +/-12 V/1 s, and also shows better retention and endurance properties than the LaTiON sample with PDA in NH3.

Keywords:

MONOS memory /
LaTiON /
HfLaON /
annealing

作者及机构信息

1.
华中科技大学, 光学与电子信息学院, 武汉 430074

基金项目: 国家自然科学基金 (批准号: 60976091) 资助的课题.

Authors and contacts

1.
School of optical and electronic information, Huazhong University of Science and Technology, Wuhan 430074, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60976091).

参考文献

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施引文献

[1]	Fang S H, Cheng X L, Huang Y, Gu H H 2007 Acta Phys. Sin. 56 6634 (in Chinese) [房少华, 程秀兰, 黄晔, 顾怀怀 2007 56 6634]
[2]	Li L L, Yu Z G, Xiao Z Q, Zhou X J 2011 Acta Phys. Sin. 60 098502 (in Chinese) [李蕾蕾, 于宗光, 肖志强, 周昕杰 2011 60 098502]
[3]	Pan T M, Chen F H, Jung J S 2010 Appl. Phys. Lett. 96 102904
[4]	Pan T M, Yeh W W 2009 J. Vac. Sci. Technol. A 27 700
[5]	Pan T M, Yeh W W, Chang W T, Chen K M, Chen J W, Huang K C 2007 Semiconductor Device Research Symposium 2007 International College Park, MD, USA Dec. 12-14 2007 (Piscataway, NJ, USA: IEEE) p435
[6]	Huang X D, Sin J K O, Lai P T 2012 Device and Materials Reliability 12 306
[7]	Xu H X, Xu J P, Li C X, Liu L, Lai P T, Chan C L 2009 IEEE International Conference of Electron Devices and Solid-State Circuits Xi'an Dec. 25-27 2009 (Piscataway, NJ, USA: IEEE) p435
[8]	Arimura H, Kitano N, Naitou Y, Oku Y, Minami T, Kosuda M, Hosoi T, Shimura T, Watanabe H 2008 Appl. Phys. Lett. 92 212902
[9]	Tao Q B, Lai P T 2010 IEEE International Conference of Electron Devices and Solid-State Circuits Hongkong, China Dec. 15-17 2010 (Piscataway, NJ, USA: IEEE) p1
[10]	Xu H X, Xu J P, Li C X, Chan C L, Lai P T 2010 Appl. Phys. Lett. 99 903
[11]	Ji F, Xu J P, Zhang H Q, Li P T, Li C X, Guan J G 2008 Research & Progress of Solid State Electronics 28 330 (in Chinese) [季峰, 徐静平, 张洪强, 黎沛涛, 李春霞, 官建国 2008 固体电子学研究与进展 28 330]
[12]	Gavartin J L, Shluger A L, Foster A S, Bersuker G I 2005 J. Appl. Phys. 97 053704
[13]	van Dover R B 1999 Appl. Phys. Lett. 74 3041
[14]	Huang X D, Lai P T, Sin J K O 2012 Appl. Phys. A Mater. Sci. Proc. 106 6881
[15]	Huang X D, Lai P T 2010 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai Nov. 1-4 2010 (Piscataway, NJ, USA: IEEE) p900
[16]	Sato S, Tachi K, Kakushima K, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H 2007 Microelectronic Engineering 84 1894
[17]	Hamamura H, Itoh H, Shimogaki Y, Aoyama J, Yoshimi T, Ueda J, Komiyama H 1998 Thin Solid Films 320 31
[18]	Lee W G, Lee J G 2002 Journal of The Electrochemical Society 149 G1

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