Gallium oxide thin film-based deep ultraviolet photodetector array with large photoconductive gain

Liu Zeng; Li Lei; Zhi Yu-Song; Du Ling; Fang Jun-Peng; Li Shan; Yu Jian-Gang; Zhang Mao-Lin; Yang Li-Li; Zhang Shao-Hui; Guo Yu-Feng; Tang Wei-Hua

doi:10.7498/aps.71.20220859

Abstract

Gallium oxide (Ga₂O₃) has the natural advantages in deep ultraviolet absorbance for performing deep ultraviolet photodetection. Owing to the vital application of photodetector array in optical imaging, in this work, we introduce a 4×4 Ga₂O₃-based photodetector array with five-finger interdigital electrodes, in which the high-quality and uniform Ga₂O₃ thin film is grown by using metal-organic chemical vapor deposition technique, and the device is fabricated by using the following methods: ultraviolet photolithography, lift-off, and ion beam sputtering . The photodetector cell possesses a responsivity of 2.65×10³ A/W, a detectivity of 2.76×10¹⁶ Jones, an external quantum efficiency of (1.29×10⁶)%, and a photoconductive gain as high as 12900. The 16-cells in this array show good uniformity. In this work the great application potential of gallium oxide deep ultraviolet detector array is illustrated from the perspective of optoelectronic performance and application prospect.

Keywords:

Authors and contacts

1.
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2.
National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
3.
China Academy of Launch Vehicle Technology, Beijing 100076, China
4.
School of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China
5.
School of Integrated Circuits, Tsinghua University, Beijing 100084, China
6.
State Key Laboratory of Dynamic Measurement Technology, School of Instrument and Electronics, North University of China, Taiyuan 030051, China
7.
Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

Corresponding author: Liu Zeng, zengliu@njupt.edu.cn ; Guo Yu-Feng, yfguo@njupt.edu.cn ; Tang Wei-Hua, whtang@njupt.edu.cn

Funds: Project supported by the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos. XK1060921115, XK1060921002), the National Natural Science Foundation of China (Grant No. 61774019), and the Fundamental Research Program of Shanxi Province, China (Grant No. 202103021223185).

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References

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Cited By

图 1 MOCVD生长的Ga₂O₃薄膜　(a) XRD图; (b) 表面SEM图; (c) 表面AFM图; (d) 紫外-可见光吸收光谱, 内插图为(αhv)²和hv的函数曲线

Figure 1. The MOCVD-grown Ga₂O₃ thin film: (a) The XRD pattern; (b) surface SEM image; (c) AFM image; (d) UV-vis absorbance spectrum, The inset is the relationship of (αhv)² and hv.

DownLoad: Full-Size Img PowerPoint

图 2 (a) 2 in薄膜上制备的6只Ga₂O₃探测器阵列的平面结构示意图; (b) 图(a)蓝色框内探测器阵列的结构示意图; (c) 图(b)中红色框局部放大图

Figure 2. (a) The schematic diagrams of the six Ga₂O₃ photodetector arrays; (b) the enlarged portion of blue mark in figure (a); (c) the enlarged portion of red mark in Fig. (b).

DownLoad: Full-Size Img PowerPoint

图 3 Ga₂O₃探测器阵列　(a)线性I-V特性曲线; (b) 对数I-V特性曲线; (c)光电流与光强的关系图; (d)动态响应图

Figure 3. (a) The linear I-V; (b) semi-log I-V; (c) the relationship of photocurrent and light intensity; (d) the time-resolved transient photo response of the Ga₂O₃ photodetector array.

DownLoad: Full-Size Img PowerPoint

图 4 10 V偏压下, 16个探测器单元在不同光强的入射光照射下暗电流与光电流的统计数值

Figure 4. The statistic photo and dark current of the 16 photodetector cells at 10 V, under the illuminations with various light intensities.

DownLoad: Full-Size Img PowerPoint

map

[1]	McClintock R, Mayes K, Yasan A, Shiell D, Kung P, Razeghi M 2005 Appl. Phys. Lett. 86 011117 Google Scholar
[2]	葛浩楠, 谢润章, 郭家祥, 李庆, 余羿叶, 何家乐, 王芳, 王鹏, 胡伟达 2022 71 110703 Google Scholar Ge H N, Xie R Z, Guo J X, Li Q, Yu Y Y, He J L, Wang F, Wang P, Hu W D 2022 Acta Phys. Sin. 71 110703 Google Scholar
[3]	Li L, Ye S, Qu J, Zhou F, Song J, Shen G 2021 Small 17 2005606 Google Scholar
[4]	Zhang Z, Lin C, Yang X, Tian Y, Gao C, Li K, Zang J, Yang X, Dong L, Shan C 2021 Carbon 173 427 Google Scholar
[5]	Konstantatos G, Sargent E H 2010 Nat. Nanotechnol. 5 391 Google Scholar
[6]	郭道友, 李培刚, 陈政委, 吴真平, 唐为华 2019 68 078501 Google Scholar Guo D Y, Li P G, Chen Z W, Wu Z P, Tang W H 2019 Acta Phys. Sin. 68 078501 Google Scholar
[7]	Chen X, Ren F, Gu S, Ye J 2019 Photon. Res. 7 381 Google Scholar
[8]	Xu J, Zheng W, Huang F 2019 J. Mater. Chem. C 7 8753 Google Scholar
[9]	刘增 2021 博士学位论文 (北京: 北京邮电大学) Liu Z 2021 Ph. D. Dissertation (Beijing: Beijing University of Posts and Telecommunications) (in Chinese)
[10]	Liu Z, Li P G, Zhi Y S, Wang X L, Chu X L, Tang W H 2019 Chin. Phys. B 28 017105 Google Scholar
[11]	Yuan Y, Hao W, Mu W, Wang Z, Chen X, Liu Q, Xu G, Wang C, Zhou H, Zou Y, Zhao X, Jia Z, Ye J, Zhang J, Long S, Tao X, Zhang R, Hao Y 2021 Fundam. Res. 1 697 Google Scholar
[12]	陆海, 张荣 2021 宽禁带半导体紫外光电探测器 (西安: 西安电子科技大学出版社) 第164页 Lu H, Zhang R 2021 Wide Band Gap Semiconductor UV Photodetector (Xi’an: Xidian University Press) p164 (in Chinese)
[13]	Peng Y, Zhang Y, Chen Z, Guo D, Zhang X, Li P, Wu Z, Tang W 2018 IEEE Photon. Technol. Lett. 30 993 Google Scholar
[14]	Zhi Y S, Liu Z, Zhang S H, Li S, Yan Z Y, Li P G, Tang W H 2021 IEEE Trans. Electron Devices 68 3435 Google Scholar
[15]	Tak B R, Singh R 2021 ACS Appl. Electron. Mater. 3 2145 Google Scholar
[16]	Liu Z, Zhi Y S, Zhang M L, Yang L L, Li S, Yan Z Y, Zhang S H, Guo D Y, Li P G, Guo Y F, Tang W H 2022 Chin. Phys. B 31 088503 Google Scholar
[17]	Pratiyush A S, Muazzam U U, Kumar S, Vijayakumar P, Ganesamoorthy S, Subramanian N, Muralidharan R, Nath D N 2019 IEEE Photon. Technol. Lett. 31 923 Google Scholar
[18]	Chen Y, Lu Y, Liao M, Tian Y, Liu Q, Gao C, Yang C, Shan C 2019 Adv. Funct. Mater. 29 1906040 Google Scholar
[19]	Chen Y C, Lu Y J, Liu Q, Lin C N, Guo J, Zang J H, Tian Y Z, Shan C X 2019 J. Mater. Chem. C 7 2557 Google Scholar
[20]	Qin Y, Li L H, Yu Z, Wu F, Dong D, Guo W, Zhang Z, Yuan J H, Xue K H, Miao X, Long S 2021 Adv. Sci. 80 2101106 Google Scholar
[21]	Qin Y, Long S, He Q, Dong H, Jian G, Zhang Y, Hou X, Tan P, Zhang Z, Lu Y, Shan C, Wang J, Hu W, Lv H, Liu Q, Liu M 2019 Adv. Electron. Mater. 5 1900389 Google Scholar
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[24]	Liu Z, Zhi Y, Li S, Liu Y, Tang X, Yan Z, Li P, Li X, Guo D, Wu Z, Tang W 2020 J. Phys. D: Appl. Phys. 53 085105 Google Scholar
[25]	Liu Z, Li S, Yan Z, Liu Y, Zhi Y, Wang X, Wu Z, Li P, Tang W 2020 J. Mater. Chem. C 8 5071 Google Scholar
[26]	Li Z, Jiao T, Hu D, Lv Y, Li W, Dong X, Zhang Y, Feng Z, Zhang B 2019 Coatings 9 281 Google Scholar
[27]	马海林, 苏庆 2014 63 116701 Google Scholar Ma H L, Su Q 2014 Acta Phys. Sin. 63 116701 Google Scholar
[28]	冯秋菊, 李芳, 李彤彤, 李昀铮, 石博, 李梦轲, 梁红伟 2018 67 218101 Google Scholar Feng Q J, Li F, Li T T, Li Y Z, Shi B, Li M K, Liang H W 2018 Acta Phys. Sin. 67 218101 Google Scholar
[29]	Wager J F 2003 Science 300 1245 Google Scholar
[30]	周树仁, 张红, 莫慧兰, 刘浩文, 熊元强, 李泓霖, 孔春阳, 叶利娟, 李万俊 2021 70 178503 Google Scholar Zhou S R, Zhang H, Mo H L, Liu H W, Xiong Y Q, Li H L, Kong C Y, Ye L J, Li W J 2021 Acta Phys. Sin. 70 178503 Google Scholar
[31]	李秀华, 张敏, 杨佳, 邢爽, 高悦, 李亚泽, 李思雨, 王崇杰 2022 71 048501 Google Scholar Li X H, Zhang M, Yang J, Xing S, Gao Y, Li Y Z, Li S Y, Wang C J 2022 Acta Phys. Sin. 71 048501 Google Scholar
[32]	欧阳晓平, 王兰, 范如玉, 张忠兵, 王伟, 吕反修, 唐伟忠, 陈广超 2006 55 2170 Google Scholar Ouyang X P, Wang L, Fan R Y, Zhang Z B, Wang W, Lv F X, Tang W Z, Chen G C 2006 Acta Phys. Sin. 55 2170 Google Scholar
[33]	Li S, Guo D, Li P, Wang X, Wang Y, Yan Z, Liu Z, Zhi Y, Huang Y, Wu Z, Tang W 2019 ACS Appl. Mater. Interfaces 11 35105 Google Scholar
[34]	Liu Z, Wang X, Liu Y, Guo D, Li S, Yan Z, Tan C K, Li W, Li P, Tang W 2019 J. Mater. Chem. C 7 13920 Google Scholar
[35]	Li S, Yan Z Y, Tang J C, Yue J Y, Liu Z, Li P G, Guo Y F, Tang W H 2022 IEEE Trans. Electron Devices 69 2443 Google Scholar
[36]	Qiao B, Zhang Z, Xie X, Li B, Chen X, Zhao H, Liu K, Liu L, Shen D 2021 J. Mater. Chem. C 9 4039 Google Scholar

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