Dual-band and dual-mode ultraviolet photodetection characterizations of Ga2O3/Al0.1Ga0.9N homo-type heterojunction

Li Lei; Zhi Yu-Song; Zhang Mao-Lin; Liu Zeng; Zhang Shao-Hui; Ma Wan-Yu; Xu Qiang; Shen Gao-Hui; Wang Xia; Guo Yu-Feng; Tang Wei-Hua

doi:10.7498/aps.72.20221738

Abstract

The deep-ultraviolet (DUV) photodetectors (PDs) have important applications in lots of fields. Thus, developing self-powered DUV PDs and excavating the inherent mechanism seem seriously crucial to achieving further actual applications. The construction of heterojunction can lead to many desired characteristics in optoelectronic devices. In the field of DUV photodetection, Ga₂O₃ has been a popular subject for constructing DUV PDs. So, it is necessary to develop self-powered Ga₂O₃-based DUV PDs through fabricating its heterogeneous structure. Therefore, in this work, the Ga₂O₃/Al_0.1Ga_0.9N heterojunction DUV PD is fabricated and discussed, which can achieve 254 and 365 nm DUV light photodetection. At positive voltages and negative voltages, the heterojunction PD can operate in a photoconductive mode or a depletion mode, respectively. In view of the PD performance, it displays decent dark current and DUV photoresponses. At voltage of 5 and –5 V, under 254 nm DUV light illumination, the photoresponsivity (R) is 2.09 and 66.32 mA/W, respectively, while under 365 nm DUV light illumination, R is 0.22 and 34.75 mA/W, respectively. In addition, under the built-in electric field (E_built-in), R is 0.13 and 0.01 mA/W for 254 nm and 365 nm DUV light illumination, respectively. In all, the fabricated heterojunction PD displays promising prospects in the coming next-generation semiconductor photodetection technology. The results in this work indicate the potential of Ga₂O₃/Al_0.1Ga_0.9N heterojunction with high performance DUV photodetection. Furthermore, except for the characterizations of the materials and photodetector, in the end of this paper, the operating mechanism of the dual-band dual-mode heterojunction PD is analyzed through its heterogeneous energy-band diagram. It is concluded that the illustrated dual-band dual-mode Ga₂O₃/Al_0.1Ga_0.9N heterojunction can be sensitive to UVA waveband and UVC waveband in the electromagnetic spectrum, extending its photodetection region. And, the dual-mode (photoconductive mode and depletion mode) photodetection indicates two kinds of carrier transports in one PD, which can be attributed to the successful construction of the N-N tomo-type Ga₂O₃/Al_0.1Ga_0.9N heterojunction.

Keywords:

Authors and contacts

1.
Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2.
National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
3.
Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
4.
China Academy of Launch Vehicle Technology, Beijing 100076, China
5.
Department of Electrical Engineering and Automation, Shanxi Institute of Technology, Yangquan 045000, China

Corresponding author: Liu Zeng, zengliu@njupt.edu.cn ; Zhang Shao-Hui, shzhang2016@sinano.ac.cn ; Tang Wei-Hua, whtang@njupt.edu.cn

Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 62204125), the Natural Science Research Starting Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications, China (Grant Nos. XK1060921115, XK1060921002), the Fundamental Research Program of Shanxi Province, China (Grant No. 20210302123388), and the Scientific and Technological Innovation Programs of Higher Education Institutes of Shanxi Province, China (Grant No. 2021L588).

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References

[1]	Chen H, Liu K, Hu L, Al-Ghamdi A A, Fang X 2015 Mater. Today 18 493 Google Scholar
[2]	Shi L, Nihtianov S 2012 IEEE Sensors J. 12 2453 Google Scholar
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图 1 Ga₂O₃/Al_0.1Ga_{0.9 N}异质结　(a) X射线衍射图谱; (b) 相应的紫外光电探测器结构示意图

Figure 1. (a) The XRD pattern of the Ga₂O₃/Al_0.1Ga_0.9N heterojunction, and (b) its schematic diagram of the UV photodetector.

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图 2 (a) Al_0.1Ga_0.9N薄膜和 (b) Ga₂O₃薄膜的紫外-可见光吸收光谱, 相应的内插图分别为 (αhv)²与(hv)的函数关系曲线

Figure 2. UV-vis absorbance spectrum of the (a) Al_0.1Ga_0.9N and (b) Ga₂O₃ thin films. The corresponding insets are the functions of (αhv)² versus hv, respectively.

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图 3 Ga₂O₃/Al_0.1Ga_0.9N异质结光电探测器的对数形式的I-V特性曲线　(a) 暗条件与254 nm波长紫外光辐照; (b) 暗条件与365 nm波长紫外光辐照

Figure 3. The semi-log I-V curves of the Ga₂O₃/Al_0.1Ga_0.9N heterojunction photodetector: (a) In the dark under 254 nm light illumination; (b) in the dark and under 365 nm light illumination.

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图 4 零偏压下　(a) 254 nm波长紫外光照射下的对数I-t特性曲线; (b) 365 nm波长紫外光照射下的对数I-t特性曲线

Figure 4. The I-t curves under (a) 254 nm and (b) 365 nm light illumination at zero bias.

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图 5 (a) 正向偏压下、(b) 反向偏压下254 nm波长光辐照下的I-t特性曲线; (c) 正向偏压下、(d) 反向偏压下365 nm波长光辐照下的I-t特性曲线

Figure 5. The I-t curves at (a) positive voltages and (b) negative voltages under the illuminations of 254 nm UV light. The I-t curvesat (c) positive voltages and (d) negative voltages under the illuminations of 365 nm UV light

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图 6 254 nm波长紫外光辐照下, 施加 (a) 正向偏压与 (b) 负偏压下的光电流与光强的关系图. 365 nm波长紫外光辐照下, 施加 (c) 正向偏压与 (d) 负偏压下的光电流与光强的关系图

Figure 6. The intensity dependent photocurrent at (a) positive voltages and (b) negative voltages under illumination of 254 nm UV light. The intensity dependent photocurrent at (c) positive voltages and (d) negative voltages under illumination of 365 nm UV light.

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图 7 Ga₂O₃/Al_0.1Ga_0.9N异质结能带结构示意图

Figure 7. The band diagram of the Ga₂O₃/Al_0.1Ga_0.9N heterojunction photodetector.

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表 1 双波段、双模式Ga₂O₃/Al_0.1Ga_0.9N异质结光电探测器的性能总结

Table 1. Summary on the performance of the dual-band, dual-mode heterojunction photodetector.

	波长254 nm			波长365 nm
偏压/V	R /(mA·W^–1)	D^*/Jones	EQE /%	R /(mA·W^–1)	D^*/Jones	EQE/%
–5	2.09	1.60 $ \times $ 10¹¹	1.01	0.22	1.69 $ \times $ 10¹⁰	0.075
–4	2.02	1.80 $ \times $ 10¹¹	0.97	0.16	1.44 $ \times $ 10¹⁰	0.055
–3	1.17	1.92 $ \times $ 10¹¹	0.84	0.13	1.39 $ \times $ 10¹⁰	0.044
–2	1.49	3.00 $ \times $ 10¹¹	0.72	0.10	2.02 $ \times $ 10¹⁰	0.034
–1	1.16	1.52 $ \times $ 10¹¹	0.66	0.07	9.53 $ \times $ 10⁹	0.025
0	0.13	9.37 $ \times $ 10⁹	0.06	0.01	6.18 $ \times $ 10⁸	0.003
1	8.47	4.48 $ \times $ 10¹¹	4.07	0.88	4.68 $ \times $ 10¹⁰	0.300
2	19.28	7.92 $ \times $ 10¹²	9.25	2.08	8.54 $ \times $ 10¹⁰	0.707
3	33.81	1.06 $ \times $ 10¹²	16.23	5.32	1.66 $ \times $ 10¹¹	1.808
4	49.62	1.25 $ \times $ 10¹²	23.98	14.24	3.56 $ \times $ 10¹¹	4.841
5	66.32	1.41 $ \times $ 10¹²	31.84	34.75	7.42 $ \times $ 10¹¹	11.815

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[1]	Chen H, Liu K, Hu L, Al-Ghamdi A A, Fang X 2015 Mater. Today 18 493 Google Scholar
[2]	Shi L, Nihtianov S 2012 IEEE Sensors J. 12 2453 Google Scholar
[3]	Monroy E, Omnes F, Calle F 2003 Semicond. Sci. Technol. 18 R33 Google Scholar
[4]	Pearton S J, Yang J, Cary IV P H, Ren F, Kim J, Tadjer M J, Mastro M A 2018 Appl. Phys. Rev. 5 011301 Google Scholar
[5]	Chen X, Ren F, Gu S, Ye J 2019 Photonics Res. 7 381 Google Scholar
[6]	Higashiwaki M 2021 Phys. Status Solidi RRL 15 2100357 Google Scholar
[7]	刘增, 李磊, 支钰崧, 都灵, 方君鹏, 李山, 余建刚, 张茂林, 杨莉莉, 张少辉, 郭宇锋, 唐为华 2022 71 208501 Google Scholar Liu Z, Li L, Zhi Y S, Du L, Fang J P, Li S, Yu J G, Zhang M L, Yang L L, Zhang S H, Guo Y F, Tang W H 2022 Acta Phys. Sin. 71 208501 Google Scholar
[8]	Xu J, Zheng W, Huang F 2019 J. Mater. Chem. C 7 8753 Google Scholar
[9]	Qian L, Li W, Gu Z, Tian J, Huang X, Lai P T, Zhang W 2022 Adv. Opt. Mater. 10 2102055 Google Scholar
[10]	Liu Z, Wang X, Liu Y, Guo D, Li S, Yan Z, Tan C, Li W, Li P, Tang W 2019 J. Mater. Chem. C 7 13920 Google Scholar
[11]	Liu Z, Du L, Zhang S, Li L, Xi Z, Tang J, Fang J, Zhang M, Yang L, Li S, Li P, Guo Y, Tang W 2022 IEEE Trans. Electron Devices 69 5595 Google Scholar
[12]	Liu Z, Zhi Y, Zhang M, Yang L, Li S, Yan Z, Zhang S, Guo D, Li P, Guo Y, Tang W 2022 Chin. Phys. B 31 088503 Google Scholar
[13]	Kroemer H 1963 Proc. IEEE 51 1782 Google Scholar
[14]	Robertson J 2000 J. Vac. Sci. Technol., B 18 1785 Google Scholar
[15]	Liu Z, Liu Y, Wang X, Li W, Zhi Y, Wang X, Li P, Tang W 2019 J. Appl. Phys. 126 045707 Google Scholar
[16]	Chen Y, Yang X, Zhang C, He G, Chen X, Qiao Q, Zang J, Dou W, Sun P, Deng Y, Dong L, Shan C 2022 Nano Lett. 22 4888 Google Scholar
[17]	Liu Z, Zhang S, Zhi Y, Li S, Yan Z, Chu X, Bian A, Li P, Tang W 2021 J. Phys. D: Appl. Phys. 54 195104 Google Scholar
[18]	Qi X, Yue J, Ji X, Liu Z, Li S, Yan Z, Zhang M, Yang L, Li P, Guo D, Guo Y, Tang W 2022 Thin Solid Films 757 139397 Google Scholar
[19]	Zheng Z, Wang W, Wu F, Wang Z, Shan M, Zhao Y, Liu W, Jian P, Dai J, Lu H, Chen C 2022 Opt. Express 30 21822 Google Scholar
[20]	Gao A, Jiang W, Ma G, Liu Z, Li S, Yan Z, Sun W, Zhang S, Tang W 2022 Curr. Appl. Phys. 33 20 Google Scholar
[21]	Ma G, Jiang W, Sun W, Yan Z, Sun B, Li S, Zhang M, Wang X, Gao A, Dai J, Liu Z, Li P, Tang W 2021 Phys. Scr. 96 125823 Google Scholar
[22]	Sun W, Sun B, Li S, Ma G, Gao A, Jiang W, Zhang M, Li P, Liu Z, Tang W 2022 Chin. Phys. B 31 024205 Google Scholar
[23]	Nakagomi S, Sato T, Takahashi Y, Kokubun Y 2015 Sens. Actuators, A 232 208 Google Scholar
[24]	Weng W Y, Hsueh T J, Chang S J, Huang G J, Hsueh H T 2011 IEEE Sensors J. 11 1491 Google Scholar
[25]	王兰喜, 陈学康, 王瑞, 曹生珠 2009 真空与低温 15 5 Google Scholar Wang L X, Chen X K, Wang D, Cao S Z 2009 Vac. Cryogenics 15 5 Google Scholar
[26]	Razeghi M, Rogalski A 1996 J. Appl. Phys. 79 7433 Google Scholar
[27]	Tung R T 2014 Appl. Phys. Rev. 1 011304 Google Scholar
[28]	Liu Z, Zhi Y, Li S, Liu Y, Tang X, Yan Z, Li P, Li X, Guo D, Wu Z, Tang W 2020 J. Phys. D: Appl. Phys. 53 085105 Google Scholar
[29]	Li S, Guo D, Li P, Wang X, Wang Y, Yan Z, Liu Z, Zhi Y, Huang Y, Wu Z, Tang W 2019 ACS Appl. Mater. Interfaces 11 35105 Google Scholar
[30]	Liu Z, Li S, Yan Z, Liu Y, Zhi Y, Wang X, Wu Z, Li P, Tang W 2020 J. Mater. Chem. C 8 5071 Google Scholar
[31]	Xu X, Chen J, Cai S, Long Z, Zhang Y, Su L, He S, Tang C, Liu P, Peng H, Fang X 2018 Adv. Mater. 30 1803165 Google Scholar
[32]	Garrido J A, Monroy E, Izpura I, Muñoz E 1998 Semicond. Sci. Technol. 13 563 Google Scholar
[33]	Grabowski S P, Schneider M, Nienhaus H, Mönch W, Dimitrov R, Ambacher O, Stutzmann M 2001 Appl. Phys. Lett. 78 2503 Google Scholar
[34]	Ma J, Zheng M, Chen C, Zhu Z, Zheng X, Chen Z, Guo Y, Liu C, Yan Y, Fang G 2018 Adv. Funct. Mater. 28 1804128 Google Scholar

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Dual-band and dual-mode ultraviolet photodetection characterizations of Ga₂O₃/Al_0.1Ga_0.9N homo-type heterojunction

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Corresponding author: Liu Zeng, zengliu@njupt.edu.cn ; Zhang Shao-Hui, shzhang2016@sinano.ac.cn ; Tang Wei-Hua, whtang@njupt.edu.cn

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