Research progress of substrate materials used for GaN-Based light emitting diodes

Chen Wei-Chao; Tang Hui-Li; Luo Ping; Ma Wei-Wei; Xu Xiao-Dong; Qian Xiao-Bo; Jiang Da-Peng; Wu Feng; Wang Jing-Ya; Xu Jun

doi:10.7498/aps.63.068103

Abstract

GaN-based light emitting diodes (LEDs) as the third generation of lighting devices, have been rapidly developed in recent years. Substrate materials, serving as the LED manufacturing basis, have great influences on the production and application of LED. The critical characteristics of substrate affecting the design and fabrication of LED are its crystal structure, thermal expansion coefficient, thermal conductivity, optical transmittance, and electrical conductivity. In this paper, we compare several common substrate materials, namely, sapphire, silicon carbide, silicon, gallium nitride and gallium oxide, review the research progress of the substrate materials in the aspects of high quality epitaxial growths, high performance device designs and preparations of substrates, and comment on their further development.

Keywords:

Authors and contacts

1.
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
2.
University of Chinese Academy of Sciences, Beijing 100049, China
Funds: Project supported by the Shanghai Committee of Science and Technology, China (Grant No. 13521102700) and the National Natural Science Foundation of China (Grant No. 61177037).

References

[1]	Yukio N, Masatsugu I, Daisuke S, Masahiko S, Takashi M 2010 J. Phys. D: Appl. Phys. 43 354002
[2]	Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z, Hao Z B 2004 Acta Phys. Sin. 53 2720 (in Chinese) [罗毅, 郭文平, 邵嘉平, 胡卉, 韩彦军, 薛松, 汪莱, 孙长征, 郝智彪 2004 53 2720]
[3]	Kong Y C, Zheng Y L, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1756 (in Chinese) [孔月婵, 郑有炓, 储荣明, 顾书林 2003 52 1756]
[4]	Xu G Z, Liang H, Bai Y Q, Liu J M, Zhu X 2005 Acta Phys. Sin. 54 5344 (in Chinese) [徐耿钊, 梁琥, 白永强, 刘纪美, 朱星2005 54 5344]
[5]	Xing Y H, Han J, Deng J, Li J J, Xu C, Sheng G D 2010 Acta Phys. Sin. 59 1233 (in Chinese) [邢艳辉, 韩军, 邓军, 李建军, 徐晨, 沈光地 2010 59 1233]
[6]	Schubert E F 2006 Light-Emitting Diodes (2nd Ed.) (New York: Cambridge University Press) p86
[7]	Schubert M F, Chhajed S, Kim J K, Schubert E F, Koleske D D, Crawford M H, Lee S R, Fischer A J, Thaler G, Banas M A 2007 Appl. Phys. Lett. 91 231114
[8]	Tadatomo K, Okagawa H, Ohuchi Y, Tsunekawa T, Imada Y, Kato M, Taguchi T 2001 Jpn. J. Appl. Phys. 40 L583
[9]	Pimputkar S, Speck J S, DenBaars S P, Nakamura S 2009 Nat. Photon. 3 180
[10]	Li B Q, Liu Y H, Feng Y C 2008 Acta Phys. Sin. 57 477 (in Chinese) [李炳乾, 刘玉华, 冯玉春 2008 57 477]
[11]	Shen Y C, Mueller G O, Watanabe S, Gardner N F, Munkholm A, Krames M R 2007 Appl. Phys. Lett. 91 141101
[12]	Vampola K J, Iza M, Keller S, DenBaars S P, Nakamura S 2009 Appl. Phys. Lett. 94 061116
[13]	Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 60 018502]
[14]	Liu M L, Min Q Y, Ye Z Q 2012 Acta Phys. Sin. 61 178503 (in Chinese) [刘木林, 闵秋应, 叶志清 2012 61 178503]
[15]	Den Baars S P, Feezell D, Kelchner K, Pimputkar S, Pan C C, Yen C C, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck J S, Nakamura S 2013 Acta Mater. 61 945
[16]	Mendes M, Fu J, Porneala C, Song X, Hannon M, Sercel J 2010 SPIE Proceedings San Francisco, USA, February 17, 2010 p75840T
[17]	Ambacher O 1998 J. Phys. D: Appl. Phys. 31 2653
[18]	Lester S D, Ponce F A, Craford M G, Steigerwald D A 1995 Appl. Phys. Lett. 66 1249
[19]	Rieger W, Metzger T, Angerer H, Dimitrov R, Ambacher O, Stutzmann M 1996 Appl. Phys. Lett. 68 970
[20]	Amano H, Iwaya M, Kashima T, Katsuragawa M, Akasaki I, Han J, Hearne S, Floro J N A, Chason E, Figiel J 1998 Jpn. J. Appl. Phys. 37 L1540
[21]	Shin I S, Lee D, Lee K H, You H, Moon D Y, Park J, Nanishi Y, Yoon E 2013 Thin Solid Films 546 118
[22]	Iwaya M, Takeuchi T, Yamaguchi S, Wetzel C, Amano H, Akasaki I 1998 Jpn. J. Appl. Phys. 37 L316
[23]	Amano H, Sawaki N, Akasaki I, Toyoda Y 1986 Appl. Phys. Lett. 48 353
[24]	Nakamura S, Mukai T, Senoh M 1994 Appl. Phys. Lett. 64 1687
[25]	Wang S J, Li N, Park E H, Feng Z C, Valencia A, Nause J, Kane M, Summers C, Ferguson I 2008 Phys. Status Solidi C 5 1736
[26]	Chen L C, Huang J B, Cheng P J, Hong L S 2007 Semicond. Sci. Technol. 22 1178
[27]	Lewis J, Schwarzenbach D, Flack H D 1982 Acta Crystallogr. A 38 733
[28]	O’Connor J R, Smiltens J 1960 Silicon Carbide–A High Temperature Semiconductor (London: Pergamon Press) p147
[29]	Levinshtein M E, Rumyantsev S L, Shur M S 2001 Properties of Advanced SemiconductorMaterials GaN, AlN, SiC, BN, SiC, SiGe (New York: John Wiley & Sons) p93
[30]	Leszczynski M, Teisseyre H, Suski T, Grzegory I, Bockowski M, Jun J, Palosz B, Porowski S, Pakula K, Baranowski J M, Barski A 1996 Acta Phys. Pol. A 90 887
[31]	Dutta B N 1962 Phys. Status Solidi 2 984
[32]	Ahman J, Svensson G, Albertsson J 1996 Acta Crystallogr. Sect C 52 1336
[33]	Egawa T, Shuhaimi B A B A 2010 J. Phys. D: Appl. Phys. 43 354008
[34]	Tsai T Y, Ou S L, Hung M T, Wuu D S, Horng R H 2011 J. Electrochem. Soc. 158 H1172
[35]	Yim W M, Paff R J 1974 J. Appl. Phys. 45 1456
[36]	Okada Y, Tokumaru Y 1984 J. Appl. Phys. 56 314
[37]	Yamaga M, Víllora E G, Shimamura K, Ichinose N, Honda M 2003 Phys. Rev. B 68 155207
[38]	Mion C 2006 Ph. D. Dissertation (Raleigh: North Carolina State University)
[39]	Glassbrenner C J, Slack G A 1964 Phys. Rev. 134 A1058
[40]	Villora E G, Shimamura K, Ujiie T, Aoki K 2008 Appl. Phys. Lett. 92 202118
[41]	Lee Y C, Lu T Y, Lai Y H, Chen H L, Ma D L, Lee C C, Cheng S C 2013 Opt. Mater. 35 1236
[42]	Tippins H H 1965 Phys. Rev. 140 316
[43]	Ujiie Y, Nishinaga T 1989 Jpn. J. Appl. Phys. 28 L337
[44]	Sakai A, Sunakawa H, Usui A 1997 Appl. Phys. Lett. 71 2259
[45]	Honda Y, Iyechika Y, Maeda T, Miyake H, Hiramatsu K 2001 Jpn. J. Appl. Phys. 40 L309
[46]	Kidoguchi I, Shibashi A, Sugahara G, Tsujimura A, Ban Y 2000 Jpn. J. Appl. Phys. 39 453
[47]	Kidoguchi I, Ishibashi A, Sugahara G, Ban Y 2000 Appl. Phys. Lett. 76 3768
[48]	Zhang W, Liu P, Jackson B, Sun T, Huang S J, Hsu H C, Su Y K, Chang S J, Li L, Li D, Wang L, Hu X, Xie Y H 2013 J. Appl. Phys. 113 144908
[49]	Gao H, Yan F, Zhang Y, Li J, Zeng Y, Wang G 2008 Solid State Electron. 52 962
[50]	Gao H, Yan F, Zhang Y, Li J, Zeng Y, Wang G 2008 J. Appl. Phys. 103 014314
[51]	Wierer J J, Steigerwald D A, Krames M R, O’Shea J J, Ludowise M J, Christenson G, Shen Y C, Lowery C, Martin P S, Subramanya S, Gotz W, Gardner N F, Kern R S, Stockman S A 2001 Appl. Phys. Lett. 78 3379
[52]	Zhong G M, Du X Q, Tang J L, Dong X K, Lei X H, Chen W 2011 Acta Phys. Sin. 61 127803 (in Chinese) [钟广明, 杜晓晴, 唐杰灵, 董向坤, 雷小华, 陈伟民2011 61 127803]
[53]	Zhang J M, Zou D S, Xu C, Gu X L, Sheng G D 2007 Acta Phys. Sin. 56 6003 (in Chinese) [张剑铭, 邹德恕, 徐晨, 顾晓玲, 沈光地 2007 56 6003]
[54]	Ryu J H, Chandramohan S, Kim H Y, Kim H K, Kang J H, Hong C H, Kyong C H, Song H D, Kwon H K 2011 J. Cryst. Growth 314 66
[55]	Fujii K, Lee S, Ha J S, Lee H J, Lee H J, Lee S H, Kato T, Cho M W, Yao T 2009 Appl. Phys. Lett. 94 242108
[56]	Rogers D J, Teherani F H, Ougazzaden A, Gautier S, Divay L, Lusson A, Durand O, Wyczisk F, Garry G, Monteiro T, Correira M R, Peres M, Neves A, McGrouther D, Chapman J N, Razeghi M 2007 Appl. Phys. Lett. 91 071120
[57]	Lin C F, Dai J J, Wang G M, Lin M S 2010 Appl. Phys. Express 3 092101
[58]	Lahreche H, Vennégués P, Vaille M, Beaumont B, Lagt M, Lorenzini P, Gibart P 1999 Semicond. Sci. Technol. 14 L33
[59]	Hanser A D, Wolden C A, Perry W G, Zheleva T, Carlson E P, Banks A D, Therrien R J, Davis R F 1998 J. Electron. Mater. 27 238
[60]	Cho E, Mogilatenko A, Brunner F, Richter E, Weyers M 2013 J. Cryst. Growth 371 45
[61]	Chen Y, Wang W X, Li Y, Jiang Y, Xu P Q, Ma Z G, Song J, Chen H 2011 Chin. J. Lumin. 32 896 (in Chinese) [陈耀, 王文新, 黎艳, 江洋, 徐培强, 马紫光, 宋京, 陈弘 2011 发光学报 32 896]
[62]	Qu S, Li S, Peng Y, Zhu X, Hu X, Wang C, Chen X, Gao Y, Xu X 2010 J. Alloy. Compd. 502 417
[63]	Reitmeier Z J, Einfeldt S, Davis R F, Zhang X, Fang X, Mahajan S 2010 Acta Mater. 58 2165
[64]	Lee C D, Sagar A, Feenstra R M, Sarney W L, Salamanca-Riba L, Hsu J W P 2001 Phys. Status. Solidi. A 188 595
[65]	Shieh C Y, Li Z Y, Kuo H C, Chi G C 2013 Gallium Nitride Materials and Devices VIII San Francisco, USA, February 02, 2013 p862529
[66]	Cheng J H, Wu Y S, Liao W C, Lin B W 2010 Appl. Phys. Lett. 96 051109
[67]	Naniwae K, Mori M, Kondo T, Suzuki A, Kitano T, Kamiyama S, Iwaya M, Takeuchi T, Akasaki I 2013 SPIE Proceedings 8641 86410G
[68]	Svensk O, Ali M, Riuttanen L, Törmä P T, Sintonen S, Suihkonen S, Sopanen M, Lipsanen H 2013 J. Cryst. Growth 370 42
[69]	Huang X H, Liu J P, Fan Y M, Kong J J, Yang H, Wang H B 2012 Chin. Phys. B 21 037105
[70]	Su Y K, Chen J J, Lin C L, Kao C C 2010 Phys. Status Solidi C 7 1784
[71]	Park H, Byeon K J, Jang J J, Nam O, Lee H 2011 Microelectron. Eng. 88 3207
[72]	Wuu D S, Wu H W, Chen S T, Tsai T Y, Zheng X, Horng R H 2009 J. Cryst. Growth 311 3063
[73]	Song J C, Lee S H, Lee I H, Seol K W, Kannappan S, Lee C R 2007 J. Cryst. Growth 308 321
[74]	Iwaya M, Kasugai H, Kawashima T, Iida K, Honshio A, Miyake Y, Kamiyama S, Amano H, Akasaki I 2006 Thin Solid Films 515 768
[75]	Yamada M, Mitani T, Narukawa Y, Shioji S, Niki I, Sonobe S, Deguchi K, Sano M, Mukai T 2002 Jpn. J. Appl. Phys. 41 L1431
[76]	Li J, Lin J Y, Jiang H X 2006 Appl. Phys. Lett. 88 171909
[77]	Takeuchi T, Amano H, Hiramatsu K, Sawaki N, Akasaki I 1991 J. Cryst. Growth 115 634
[78]	Guha S, Bojarczuk N A 1998 Appl. Phys. Lett. 72 415
[79]	Ishikawa H, Yamamoto K, Egawa T, Soga T, Jimbo T, Umeno M 1998 J. Cryst. Growth 189--190 178
[80]	Able A, Wegscheider W, Engl K, Zweck J 2005 J. Cryst. Growth 276 415
[81]	Hageman P R, Haffouz S, Kirilyuk V, Grzegorczyk A, Larsen P K 2001 Phys. Status. Solidi. A 188 523
[82]	Dadgar A, Poschenrieder M, Bläsing J, Fehse K, Diez A, Krost A 2002 Appl. Phys. Lett. 80 3670
[83]	Kim M H, Do Y G, Kang H C, Noh D Y, Park S J 2001 Appl. Phys. Lett. 79 2713
[84]	Cheng K, Leys M, Degroote S, Daele B, Boeykens S, Derluyn J, Germain M, Tendeloo G, Engelen J, Borghs G 2006 J. Electron. Mater. 35 592
[85]	Feltin E, Beaumont B, Lagt M, de Mierry P, Vennégués P, Lahréche H, Leroux M, Gibart P 2001 Appl. Phys. Lett. 79 3230
[86]	Strittmatter A, Rodt S, Reiβmann L, Bimberg D, Schröder H, Obermeier E, Riemann T, Christen J, Krost A 2001 Appl. Phys. Lett. 78 727
[87]	Kawaguchi Y, Honda Y, Matsushima H, Yamaguchi M, Hiramatsu K, Sawaki N 1998 Jpn. J. Appl. Phys. 37 L966
[88]	Drechsel P, Stauss P, Bergbauer W, Rode P, Fritze S, Krost A, Markurt T, Schulz T, Albrecht M, Riechert H, Steegmller U 2012 Phys. Status. Solidi. A 209 427
[89]	Zhou W, Tao M, Chen L, Yang H 2007 J. Appl. Phys. 102 103105
[90]	Ishikawa H, Zhang B, Asano K, Egawa T, Jimbo T 2004 J. Cryst. Growth 272 322
[91]	Zhang B, Egawa T, Ishikawa H, Liu Y, Jimbo T 2005 Appl. Phys. Lett. 86 071113
[92]	Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C L 2008 Acta Phys. Sin. 57 3176 (in Chinese) [熊传兵, 江风益, 方文卿, 王立, 莫春兰 2008 57 3176]
[93]	Sasaoka C, Sunakawa H, Kimura A, Nido M, Usui A, Sakai A 1998 J. Cryst. Growth 189--190 61
[94]	Tao R C, Yu T J, Jia C Y, Chen Z Z, Qin Z, Zhang G Y 2009 Chin. Phys. B 18 2603
[95]	Zhao Y, Tanaka S, Pan C C, Fujito K, Feezell D, Speck J S, DenBaars S P, Nakamura S 2011 Appl. Phys. Express 4 082104
[96]	Cich M J, Aldaz R I, Chakraborty A, David A, Grundmann M J, Tyagi A, Zhang M, Steranka F M, Krames M R 2012 Appl. Phys. Lett. 101 223509
[97]	Shimamura K, Villora E G, Domen K, Yui K, Aoki K, Ichinose N 2005 Jpn. J. Appl. Phys. 44 L7
[98]	Ito S, Takeda K, Nagata K, Aoshima H, Takehara K, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I, Amano H 2012 Phys. Status Solidi C 9 519
[99]	Aida H, Nishiguchi K, Takeda H, Aota N, Sunakawa K, Yaguchi Y 2008 Jpn. J. Appl. Phys. 47 8506
[100]	Víllora E G, Shimamura K, Yoshikawa Y, Aoki K, Ichinose N 2004 J. Cryst. Growth 270 420
[101]	Galazka Z, Uecker R, Irmscher K, Albrecht M, Klimm D, Pietsch M, Brutzam M, Bertram R, Ganschow S, Fornari R 2010 Cryst. Res. Technol. 45 1229
[102]	Tomm Y, Reiche P, Klimm D, Fukuda T 2000 J. Cryst. Growth 220 510
[103]	Zhang J G, Xia C T, Deng Q, Xu W S, Shi H S, Wu F, Xu J 2006 J. Phys. Chem. Solids 67 1656

Cited By

[1]	Yukio N, Masatsugu I, Daisuke S, Masahiko S, Takashi M 2010 J. Phys. D: Appl. Phys. 43 354002
[2]	Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z, Hao Z B 2004 Acta Phys. Sin. 53 2720 (in Chinese) [罗毅, 郭文平, 邵嘉平, 胡卉, 韩彦军, 薛松, 汪莱, 孙长征, 郝智彪 2004 53 2720]
[3]	Kong Y C, Zheng Y L, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1756 (in Chinese) [孔月婵, 郑有炓, 储荣明, 顾书林 2003 52 1756]
[4]	Xu G Z, Liang H, Bai Y Q, Liu J M, Zhu X 2005 Acta Phys. Sin. 54 5344 (in Chinese) [徐耿钊, 梁琥, 白永强, 刘纪美, 朱星2005 54 5344]
[5]	Xing Y H, Han J, Deng J, Li J J, Xu C, Sheng G D 2010 Acta Phys. Sin. 59 1233 (in Chinese) [邢艳辉, 韩军, 邓军, 李建军, 徐晨, 沈光地 2010 59 1233]
[6]	Schubert E F 2006 Light-Emitting Diodes (2nd Ed.) (New York: Cambridge University Press) p86
[7]	Schubert M F, Chhajed S, Kim J K, Schubert E F, Koleske D D, Crawford M H, Lee S R, Fischer A J, Thaler G, Banas M A 2007 Appl. Phys. Lett. 91 231114
[8]	Tadatomo K, Okagawa H, Ohuchi Y, Tsunekawa T, Imada Y, Kato M, Taguchi T 2001 Jpn. J. Appl. Phys. 40 L583
[9]	Pimputkar S, Speck J S, DenBaars S P, Nakamura S 2009 Nat. Photon. 3 180
[10]	Li B Q, Liu Y H, Feng Y C 2008 Acta Phys. Sin. 57 477 (in Chinese) [李炳乾, 刘玉华, 冯玉春 2008 57 477]
[11]	Shen Y C, Mueller G O, Watanabe S, Gardner N F, Munkholm A, Krames M R 2007 Appl. Phys. Lett. 91 141101
[12]	Vampola K J, Iza M, Keller S, DenBaars S P, Nakamura S 2009 Appl. Phys. Lett. 94 061116
[13]	Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 60 018502]
[14]	Liu M L, Min Q Y, Ye Z Q 2012 Acta Phys. Sin. 61 178503 (in Chinese) [刘木林, 闵秋应, 叶志清 2012 61 178503]
[15]	Den Baars S P, Feezell D, Kelchner K, Pimputkar S, Pan C C, Yen C C, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck J S, Nakamura S 2013 Acta Mater. 61 945
[16]	Mendes M, Fu J, Porneala C, Song X, Hannon M, Sercel J 2010 SPIE Proceedings San Francisco, USA, February 17, 2010 p75840T
[17]	Ambacher O 1998 J. Phys. D: Appl. Phys. 31 2653
[18]	Lester S D, Ponce F A, Craford M G, Steigerwald D A 1995 Appl. Phys. Lett. 66 1249
[19]	Rieger W, Metzger T, Angerer H, Dimitrov R, Ambacher O, Stutzmann M 1996 Appl. Phys. Lett. 68 970
[20]	Amano H, Iwaya M, Kashima T, Katsuragawa M, Akasaki I, Han J, Hearne S, Floro J N A, Chason E, Figiel J 1998 Jpn. J. Appl. Phys. 37 L1540
[21]	Shin I S, Lee D, Lee K H, You H, Moon D Y, Park J, Nanishi Y, Yoon E 2013 Thin Solid Films 546 118
[22]	Iwaya M, Takeuchi T, Yamaguchi S, Wetzel C, Amano H, Akasaki I 1998 Jpn. J. Appl. Phys. 37 L316
[23]	Amano H, Sawaki N, Akasaki I, Toyoda Y 1986 Appl. Phys. Lett. 48 353
[24]	Nakamura S, Mukai T, Senoh M 1994 Appl. Phys. Lett. 64 1687
[25]	Wang S J, Li N, Park E H, Feng Z C, Valencia A, Nause J, Kane M, Summers C, Ferguson I 2008 Phys. Status Solidi C 5 1736
[26]	Chen L C, Huang J B, Cheng P J, Hong L S 2007 Semicond. Sci. Technol. 22 1178
[27]	Lewis J, Schwarzenbach D, Flack H D 1982 Acta Crystallogr. A 38 733
[28]	O’Connor J R, Smiltens J 1960 Silicon Carbide–A High Temperature Semiconductor (London: Pergamon Press) p147
[29]	Levinshtein M E, Rumyantsev S L, Shur M S 2001 Properties of Advanced SemiconductorMaterials GaN, AlN, SiC, BN, SiC, SiGe (New York: John Wiley & Sons) p93
[30]	Leszczynski M, Teisseyre H, Suski T, Grzegory I, Bockowski M, Jun J, Palosz B, Porowski S, Pakula K, Baranowski J M, Barski A 1996 Acta Phys. Pol. A 90 887
[31]	Dutta B N 1962 Phys. Status Solidi 2 984
[32]	Ahman J, Svensson G, Albertsson J 1996 Acta Crystallogr. Sect C 52 1336
[33]	Egawa T, Shuhaimi B A B A 2010 J. Phys. D: Appl. Phys. 43 354008
[34]	Tsai T Y, Ou S L, Hung M T, Wuu D S, Horng R H 2011 J. Electrochem. Soc. 158 H1172
[35]	Yim W M, Paff R J 1974 J. Appl. Phys. 45 1456
[36]	Okada Y, Tokumaru Y 1984 J. Appl. Phys. 56 314
[37]	Yamaga M, Víllora E G, Shimamura K, Ichinose N, Honda M 2003 Phys. Rev. B 68 155207
[38]	Mion C 2006 Ph. D. Dissertation (Raleigh: North Carolina State University)
[39]	Glassbrenner C J, Slack G A 1964 Phys. Rev. 134 A1058
[40]	Villora E G, Shimamura K, Ujiie T, Aoki K 2008 Appl. Phys. Lett. 92 202118
[41]	Lee Y C, Lu T Y, Lai Y H, Chen H L, Ma D L, Lee C C, Cheng S C 2013 Opt. Mater. 35 1236
[42]	Tippins H H 1965 Phys. Rev. 140 316
[43]	Ujiie Y, Nishinaga T 1989 Jpn. J. Appl. Phys. 28 L337
[44]	Sakai A, Sunakawa H, Usui A 1997 Appl. Phys. Lett. 71 2259
[45]	Honda Y, Iyechika Y, Maeda T, Miyake H, Hiramatsu K 2001 Jpn. J. Appl. Phys. 40 L309
[46]	Kidoguchi I, Shibashi A, Sugahara G, Tsujimura A, Ban Y 2000 Jpn. J. Appl. Phys. 39 453
[47]	Kidoguchi I, Ishibashi A, Sugahara G, Ban Y 2000 Appl. Phys. Lett. 76 3768
[48]	Zhang W, Liu P, Jackson B, Sun T, Huang S J, Hsu H C, Su Y K, Chang S J, Li L, Li D, Wang L, Hu X, Xie Y H 2013 J. Appl. Phys. 113 144908
[49]	Gao H, Yan F, Zhang Y, Li J, Zeng Y, Wang G 2008 Solid State Electron. 52 962
[50]	Gao H, Yan F, Zhang Y, Li J, Zeng Y, Wang G 2008 J. Appl. Phys. 103 014314
[51]	Wierer J J, Steigerwald D A, Krames M R, O’Shea J J, Ludowise M J, Christenson G, Shen Y C, Lowery C, Martin P S, Subramanya S, Gotz W, Gardner N F, Kern R S, Stockman S A 2001 Appl. Phys. Lett. 78 3379
[52]	Zhong G M, Du X Q, Tang J L, Dong X K, Lei X H, Chen W 2011 Acta Phys. Sin. 61 127803 (in Chinese) [钟广明, 杜晓晴, 唐杰灵, 董向坤, 雷小华, 陈伟民2011 61 127803]
[53]	Zhang J M, Zou D S, Xu C, Gu X L, Sheng G D 2007 Acta Phys. Sin. 56 6003 (in Chinese) [张剑铭, 邹德恕, 徐晨, 顾晓玲, 沈光地 2007 56 6003]
[54]	Ryu J H, Chandramohan S, Kim H Y, Kim H K, Kang J H, Hong C H, Kyong C H, Song H D, Kwon H K 2011 J. Cryst. Growth 314 66
[55]	Fujii K, Lee S, Ha J S, Lee H J, Lee H J, Lee S H, Kato T, Cho M W, Yao T 2009 Appl. Phys. Lett. 94 242108
[56]	Rogers D J, Teherani F H, Ougazzaden A, Gautier S, Divay L, Lusson A, Durand O, Wyczisk F, Garry G, Monteiro T, Correira M R, Peres M, Neves A, McGrouther D, Chapman J N, Razeghi M 2007 Appl. Phys. Lett. 91 071120
[57]	Lin C F, Dai J J, Wang G M, Lin M S 2010 Appl. Phys. Express 3 092101
[58]	Lahreche H, Vennégués P, Vaille M, Beaumont B, Lagt M, Lorenzini P, Gibart P 1999 Semicond. Sci. Technol. 14 L33
[59]	Hanser A D, Wolden C A, Perry W G, Zheleva T, Carlson E P, Banks A D, Therrien R J, Davis R F 1998 J. Electron. Mater. 27 238
[60]	Cho E, Mogilatenko A, Brunner F, Richter E, Weyers M 2013 J. Cryst. Growth 371 45
[61]	Chen Y, Wang W X, Li Y, Jiang Y, Xu P Q, Ma Z G, Song J, Chen H 2011 Chin. J. Lumin. 32 896 (in Chinese) [陈耀, 王文新, 黎艳, 江洋, 徐培强, 马紫光, 宋京, 陈弘 2011 发光学报 32 896]
[62]	Qu S, Li S, Peng Y, Zhu X, Hu X, Wang C, Chen X, Gao Y, Xu X 2010 J. Alloy. Compd. 502 417
[63]	Reitmeier Z J, Einfeldt S, Davis R F, Zhang X, Fang X, Mahajan S 2010 Acta Mater. 58 2165
[64]	Lee C D, Sagar A, Feenstra R M, Sarney W L, Salamanca-Riba L, Hsu J W P 2001 Phys. Status. Solidi. A 188 595
[65]	Shieh C Y, Li Z Y, Kuo H C, Chi G C 2013 Gallium Nitride Materials and Devices VIII San Francisco, USA, February 02, 2013 p862529
[66]	Cheng J H, Wu Y S, Liao W C, Lin B W 2010 Appl. Phys. Lett. 96 051109
[67]	Naniwae K, Mori M, Kondo T, Suzuki A, Kitano T, Kamiyama S, Iwaya M, Takeuchi T, Akasaki I 2013 SPIE Proceedings 8641 86410G
[68]	Svensk O, Ali M, Riuttanen L, Törmä P T, Sintonen S, Suihkonen S, Sopanen M, Lipsanen H 2013 J. Cryst. Growth 370 42
[69]	Huang X H, Liu J P, Fan Y M, Kong J J, Yang H, Wang H B 2012 Chin. Phys. B 21 037105
[70]	Su Y K, Chen J J, Lin C L, Kao C C 2010 Phys. Status Solidi C 7 1784
[71]	Park H, Byeon K J, Jang J J, Nam O, Lee H 2011 Microelectron. Eng. 88 3207
[72]	Wuu D S, Wu H W, Chen S T, Tsai T Y, Zheng X, Horng R H 2009 J. Cryst. Growth 311 3063
[73]	Song J C, Lee S H, Lee I H, Seol K W, Kannappan S, Lee C R 2007 J. Cryst. Growth 308 321
[74]	Iwaya M, Kasugai H, Kawashima T, Iida K, Honshio A, Miyake Y, Kamiyama S, Amano H, Akasaki I 2006 Thin Solid Films 515 768
[75]	Yamada M, Mitani T, Narukawa Y, Shioji S, Niki I, Sonobe S, Deguchi K, Sano M, Mukai T 2002 Jpn. J. Appl. Phys. 41 L1431
[76]	Li J, Lin J Y, Jiang H X 2006 Appl. Phys. Lett. 88 171909
[77]	Takeuchi T, Amano H, Hiramatsu K, Sawaki N, Akasaki I 1991 J. Cryst. Growth 115 634
[78]	Guha S, Bojarczuk N A 1998 Appl. Phys. Lett. 72 415
[79]	Ishikawa H, Yamamoto K, Egawa T, Soga T, Jimbo T, Umeno M 1998 J. Cryst. Growth 189--190 178
[80]	Able A, Wegscheider W, Engl K, Zweck J 2005 J. Cryst. Growth 276 415
[81]	Hageman P R, Haffouz S, Kirilyuk V, Grzegorczyk A, Larsen P K 2001 Phys. Status. Solidi. A 188 523
[82]	Dadgar A, Poschenrieder M, Bläsing J, Fehse K, Diez A, Krost A 2002 Appl. Phys. Lett. 80 3670
[83]	Kim M H, Do Y G, Kang H C, Noh D Y, Park S J 2001 Appl. Phys. Lett. 79 2713
[84]	Cheng K, Leys M, Degroote S, Daele B, Boeykens S, Derluyn J, Germain M, Tendeloo G, Engelen J, Borghs G 2006 J. Electron. Mater. 35 592
[85]	Feltin E, Beaumont B, Lagt M, de Mierry P, Vennégués P, Lahréche H, Leroux M, Gibart P 2001 Appl. Phys. Lett. 79 3230
[86]	Strittmatter A, Rodt S, Reiβmann L, Bimberg D, Schröder H, Obermeier E, Riemann T, Christen J, Krost A 2001 Appl. Phys. Lett. 78 727
[87]	Kawaguchi Y, Honda Y, Matsushima H, Yamaguchi M, Hiramatsu K, Sawaki N 1998 Jpn. J. Appl. Phys. 37 L966
[88]	Drechsel P, Stauss P, Bergbauer W, Rode P, Fritze S, Krost A, Markurt T, Schulz T, Albrecht M, Riechert H, Steegmller U 2012 Phys. Status. Solidi. A 209 427
[89]	Zhou W, Tao M, Chen L, Yang H 2007 J. Appl. Phys. 102 103105
[90]	Ishikawa H, Zhang B, Asano K, Egawa T, Jimbo T 2004 J. Cryst. Growth 272 322
[91]	Zhang B, Egawa T, Ishikawa H, Liu Y, Jimbo T 2005 Appl. Phys. Lett. 86 071113
[92]	Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C L 2008 Acta Phys. Sin. 57 3176 (in Chinese) [熊传兵, 江风益, 方文卿, 王立, 莫春兰 2008 57 3176]
[93]	Sasaoka C, Sunakawa H, Kimura A, Nido M, Usui A, Sakai A 1998 J. Cryst. Growth 189--190 61
[94]	Tao R C, Yu T J, Jia C Y, Chen Z Z, Qin Z, Zhang G Y 2009 Chin. Phys. B 18 2603
[95]	Zhao Y, Tanaka S, Pan C C, Fujito K, Feezell D, Speck J S, DenBaars S P, Nakamura S 2011 Appl. Phys. Express 4 082104
[96]	Cich M J, Aldaz R I, Chakraborty A, David A, Grundmann M J, Tyagi A, Zhang M, Steranka F M, Krames M R 2012 Appl. Phys. Lett. 101 223509
[97]	Shimamura K, Villora E G, Domen K, Yui K, Aoki K, Ichinose N 2005 Jpn. J. Appl. Phys. 44 L7
[98]	Ito S, Takeda K, Nagata K, Aoshima H, Takehara K, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I, Amano H 2012 Phys. Status Solidi C 9 519
[99]	Aida H, Nishiguchi K, Takeda H, Aota N, Sunakawa K, Yaguchi Y 2008 Jpn. J. Appl. Phys. 47 8506
[100]	Víllora E G, Shimamura K, Yoshikawa Y, Aoki K, Ichinose N 2004 J. Cryst. Growth 270 420
[101]	Galazka Z, Uecker R, Irmscher K, Albrecht M, Klimm D, Pietsch M, Brutzam M, Bertram R, Ganschow S, Fornari R 2010 Cryst. Res. Technol. 45 1229
[102]	Tomm Y, Reiche P, Klimm D, Fukuda T 2000 J. Cryst. Growth 220 510
[103]	Zhang J G, Xia C T, Deng Q, Xu W S, Shi H S, Wu F, Xu J 2006 J. Phys. Chem. Solids 67 1656

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