-
Gallium oxide (Ga2O3) thin films are deposited on silicon and quartz glass substrates by reactive DC magnetron sputtering under different oxygen pressure η (η =O2/[Ar+O2]), and the effect of oxygen pressure on the structure and optical band gap (Eg) is investigated. X-ray diffraction (XRD) and Raman scattering reveal that the products are beta-gallium oxide after heat treatment at 900 ℃, and that the grain size and optical band gap of gallium oxide are increased, the band gap Eg varies from 4.68 to 4.85 eV when tested by a room-temperature ultraviolet-visible (UV-VIS) spectrophotometer, and the (Eg) has also been calculated by using Tauc formula while the oxygen pressure η gradually increases.
-
Keywords:
- gallium oxide /
- optical band gap /
- magnetron sputterting
[1] Wu X C, Song W H, Huang W D, Pu M H, Zhao B, Sun Y P, Du J J 2000 Chem. Phys. Lett. 328 5
[2] Rustum Roy, Hill V G, Osborn E F 1952 J. Am. Chem. Soc. 74 719
[3] Fleischer M, Meixner H 1991 Sensor and Actuators B 43 437
[4] Li Y X, Trinchi A, Wlodarski W, Galatsis K 2003 Sensor and Actuators B 93 431
[5] Biyikli N, Aytur O, Kimukin L 2002 Appl. Phys. Lett. 81 3272
[6] Zhou M, Zou S H, Zhao D G 2008 Acta Phys. Sin. 57 7322 (in Chinese)[周梅, 左淑华, 赵德刚 2008 57 7322]
[7] Yang C 2010 Ph. D. Dissertation (Chendu: University of Electronic and Science of China) (in Chinese) [杨承 2010 博士学位论文(成都: 电子科技大学)]
[8] Trinchi A, Wlodarski W, Li Y X 2004 Sensor and Actuators B 100 94
[9] Batiston G A, Gerbasi R, Porchia M, Caccavale F 1996 Thin Solid Films 279 115
[10] Passlack M et al 1995 J. Appl. Phys. 2 77
[11] Rebiena M, Henrion W, Hong M, Mannaerts J P, Fleischer M 2002 Appl. Phys. Lett. 81 2
[12] Passlack M, Hong M, Mannaerts J P 1996 Appl. Phys. Lett. 68 8
[13] Ma H L, Su Q, Lan W, Liu X Q 2008 Acta Phys. Sin. 57 7322 (in Chinese) [马海林, 苏庆, 兰伟, 刘雪芹 2008 57 7322]
[14] Ma H L, Fan D W 2009 Chin. Phys. Lett. 26 117302
[15] Ma H L, Fan D W, Niu X S 2010 Chin. Phys. B 19 117302
[16] Li S T 1990 Elements of crystal X-ray diffraction (Beijing: Industry of metallurgy press) p170 (in Chinese) [李树棠 1990 晶体X射线衍射学基础(北京: 冶金工业出版社)第170页]
[17] Xu X, Cao C B, Guo Y J, Zhu H S 2003 Chem. Phys. Lett. 378 660
[18] Jalilian R, Yazdanpanah M M et al 2006 Chem. Phys. Lett. 426 393
[19] Tauc J, Grigorovici R, Vancu A 1966 Phys. Status Solidi. 15 627
-
[1] Wu X C, Song W H, Huang W D, Pu M H, Zhao B, Sun Y P, Du J J 2000 Chem. Phys. Lett. 328 5
[2] Rustum Roy, Hill V G, Osborn E F 1952 J. Am. Chem. Soc. 74 719
[3] Fleischer M, Meixner H 1991 Sensor and Actuators B 43 437
[4] Li Y X, Trinchi A, Wlodarski W, Galatsis K 2003 Sensor and Actuators B 93 431
[5] Biyikli N, Aytur O, Kimukin L 2002 Appl. Phys. Lett. 81 3272
[6] Zhou M, Zou S H, Zhao D G 2008 Acta Phys. Sin. 57 7322 (in Chinese)[周梅, 左淑华, 赵德刚 2008 57 7322]
[7] Yang C 2010 Ph. D. Dissertation (Chendu: University of Electronic and Science of China) (in Chinese) [杨承 2010 博士学位论文(成都: 电子科技大学)]
[8] Trinchi A, Wlodarski W, Li Y X 2004 Sensor and Actuators B 100 94
[9] Batiston G A, Gerbasi R, Porchia M, Caccavale F 1996 Thin Solid Films 279 115
[10] Passlack M et al 1995 J. Appl. Phys. 2 77
[11] Rebiena M, Henrion W, Hong M, Mannaerts J P, Fleischer M 2002 Appl. Phys. Lett. 81 2
[12] Passlack M, Hong M, Mannaerts J P 1996 Appl. Phys. Lett. 68 8
[13] Ma H L, Su Q, Lan W, Liu X Q 2008 Acta Phys. Sin. 57 7322 (in Chinese) [马海林, 苏庆, 兰伟, 刘雪芹 2008 57 7322]
[14] Ma H L, Fan D W 2009 Chin. Phys. Lett. 26 117302
[15] Ma H L, Fan D W, Niu X S 2010 Chin. Phys. B 19 117302
[16] Li S T 1990 Elements of crystal X-ray diffraction (Beijing: Industry of metallurgy press) p170 (in Chinese) [李树棠 1990 晶体X射线衍射学基础(北京: 冶金工业出版社)第170页]
[17] Xu X, Cao C B, Guo Y J, Zhu H S 2003 Chem. Phys. Lett. 378 660
[18] Jalilian R, Yazdanpanah M M et al 2006 Chem. Phys. Lett. 426 393
[19] Tauc J, Grigorovici R, Vancu A 1966 Phys. Status Solidi. 15 627
Catalog
Metrics
- Abstract views: 7404
- PDF Downloads: 6600
- Cited By: 0
下载:
