GaN基发光二极管衬底材料的研究进展

陈伟超; 唐慧丽; 罗平; 麻尉蔚; 徐晓东; 钱小波; 姜大朋; 吴锋; 王静雅; 徐军

doi:10.7498/aps.63.068103

摘要

GaN基发光二极管（LED）作为第三代照明器件在近年来发展迅猛. 衬底材料作为LED制造的基础，对器件制备与应用具有极其重要的影响. 本文分析综述了衬底材料影响LED器件设计与制造的关键特性（晶格结构、热胀系数、热导率、光学透过率、导电性），对比了几种常见衬底材料（蓝宝石、碳化硅、单晶硅、氮化镓、氧化镓）在高质量外延层生长、高性能器件设计和衬底材料制备方面的研究进展，并对几种材料的发展前景做出了展望.

关键词:

Abstract

GaN-based light emitting diodes (LEDs) as the third generation of lighting devices, have been rapidly developed in recent years. Substrate materials, serving as the LED manufacturing basis, have great influences on the production and application of LED. The critical characteristics of substrate affecting the design and fabrication of LED are its crystal structure, thermal expansion coefficient, thermal conductivity, optical transmittance, and electrical conductivity. In this paper, we compare several common substrate materials, namely, sapphire, silicon carbide, silicon, gallium nitride and gallium oxide, review the research progress of the substrate materials in the aspects of high quality epitaxial growths, high performance device designs and preparations of substrates, and comment on their further development.

Keywords:

作者及机构信息

1.
中国科学院上海硅酸盐研究所, 上海 201800;

2.
中国科学院大学, 北京 100049

基金项目: 上海市科委科技基金（批准号：13521102700）和国家自然科学基金（批准号：61177037）资助的课题.

Authors and contacts

1.
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;

2.
University of Chinese Academy of Sciences, Beijing 100049, China

Funds: Project supported by the Shanghai Committee of Science and Technology, China (Grant No. 13521102700) and the National Natural Science Foundation of China (Grant No. 61177037).

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施引文献

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