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Al/ZnO/Al thin films are prepared on the glass substrates by dc magnetron sputtering and annealed in vacuum and atmosphere, separately. The crystal structures are analyzed by X-ray diffraction (XRD), and the magnetic properties are measured by a Physical Properties Measurement System (PPMS) with a magnetic field parallel to the films plane. The XRD results indicate that the microstructures of thin films are greatly influenced by the annealing aura. In this paper, an improved corrected method to subtract the signal of the substrate is suggested. Simultaneously, the maximum fitting error of substrate is calculated, and the magnetic properties of the modified films are discussed. The results show that the room temperature ferromagnetism may be related to the charge transfer between Al and Zn and the variational position of Al in ZnO films in different annealing conditions.
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Keywords:
- Al /ZnO/ Al films /
- ferromagnetic /
- magnetron characterization
[1] Liu G L, Cao Q, Deng J X 2007 Appl. Phys. Lett. 90 052504
[2] Hsu H S, Huanget J C A, Huang Y H, Liao Y F, Lin M Z, Lee C H, Lee J F, Chen S F, Lai L Y, Liu C P 2006 Appl. Phys. Lett. 88 242507
[3] Sharma V K , Varma G D 2009 J. Appl. Phys. 105 07C510
[4] Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[5] Wang D F, Park S Y, Lee Y S 2008 J. Appl. Phys. 103 07D126
[6] Wang C Z, Chen Z, He Y 2009 Applied Surface Science 255 6881
[7] Lu Z L, Zou W Q, Xu M X, Zhang F M 2009 Acta Phys. Sin. 58 8467(in Chinese)[路忠林、邹文琴、徐明祥、张凤鸣 2009 58 8467]
[8] Liu E, Xiao P, Chen J S, Lim B C, Li L 2008 Current Applied Physics 8 408
[9] Hou D L, Ye X J, Meng H J, Zhou H J, Li X L, Zhen C M, Tang G D 2007 Appl. Phys. Lett. 90 142502
[10] Lu Z L, Zou W Q, Xu M X, Zhang F M 2010 Chin. Phys. B 19 056101
[11] Yu W, Yang L H, Teng X Y 2008 J. Appl. Phys. 103 093901
[12] Liu X C, Zhang H W, Zhang T, Chen B Y, Chen Z Z, Song L X, Shi E W 2008 China. Phys. B 17 1371
[13] Ma Y W, Ding J, Yi J B, Zhang H T, Ng C M 2009 J. Appl. Phys. 105 07C503
[14] Zhang Y B, Li S, Goh G K L, Tripathy S 2008 Appl. Phys. Lett. 93 102510
[15] Ney V, Ye S, Kammermeier T, Ney A, Zhou H, Fallert J, Kalt H, Lo F Y, Melnikov A, Wieck A D 2008 J.Appl. Phys.104 083904
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[1] Liu G L, Cao Q, Deng J X 2007 Appl. Phys. Lett. 90 052504
[2] Hsu H S, Huanget J C A, Huang Y H, Liao Y F, Lin M Z, Lee C H, Lee J F, Chen S F, Lai L Y, Liu C P 2006 Appl. Phys. Lett. 88 242507
[3] Sharma V K , Varma G D 2009 J. Appl. Phys. 105 07C510
[4] Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[5] Wang D F, Park S Y, Lee Y S 2008 J. Appl. Phys. 103 07D126
[6] Wang C Z, Chen Z, He Y 2009 Applied Surface Science 255 6881
[7] Lu Z L, Zou W Q, Xu M X, Zhang F M 2009 Acta Phys. Sin. 58 8467(in Chinese)[路忠林、邹文琴、徐明祥、张凤鸣 2009 58 8467]
[8] Liu E, Xiao P, Chen J S, Lim B C, Li L 2008 Current Applied Physics 8 408
[9] Hou D L, Ye X J, Meng H J, Zhou H J, Li X L, Zhen C M, Tang G D 2007 Appl. Phys. Lett. 90 142502
[10] Lu Z L, Zou W Q, Xu M X, Zhang F M 2010 Chin. Phys. B 19 056101
[11] Yu W, Yang L H, Teng X Y 2008 J. Appl. Phys. 103 093901
[12] Liu X C, Zhang H W, Zhang T, Chen B Y, Chen Z Z, Song L X, Shi E W 2008 China. Phys. B 17 1371
[13] Ma Y W, Ding J, Yi J B, Zhang H T, Ng C M 2009 J. Appl. Phys. 105 07C503
[14] Zhang Y B, Li S, Goh G K L, Tripathy S 2008 Appl. Phys. Lett. 93 102510
[15] Ney V, Ye S, Kammermeier T, Ney A, Zhou H, Fallert J, Kalt H, Lo F Y, Melnikov A, Wieck A D 2008 J.Appl. Phys.104 083904
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