Zn0.97Cr0.03O的PLD制备及其铁磁性

谢玲玲; 陈水源; 刘凤金; 张建敏; 林应斌; 黄志高

doi:10.7498/aps.63.077102

摘要

采用脉冲激光沉积（PLD）的方法在石英基片上制备了不同氧分压（0，0.05，0.15和0.20 Pa）下Zn0.97Cr0.03O薄膜，并测量了它们的磁性、XRD谱、PL谱及XPS谱等. 实验结果表明，所有的样品都具有良好的结晶性，且都沿c轴高度取向；磁测量结果表明，四个样品都具有铁磁性，且在氧压为0.15 Pa下沉积的薄膜磁性最强；四个样品都存在VZn，Oi，Zni，VZn-，VO缺陷，尤其是VZn对应共振峰面积占所有缺陷总面积的百分比和样品的饱和磁化强度具有相同的变化趋势，表明Zn0.97Cr0.03O磁性与锌空位密切相关；四个样品中都存在Cr3+离子，且在0.15 Pa时Cr3+的含量最多. 上述实验结果表明，Cr3+和VZn的缺陷复合体是ZnO：Cr样品具有稳定的铁磁有序的最有利条件，它证实了早先的基于第一性原理的计算结果.

关键词:

Abstract

Four Zn0.97Cr0.03O films were deposited on quartz wafers in various oxygen environment (0, 0.05, 0.15 and 0.2 Pa) using pulsed laser deposition (PLD). The films were characterized by XRD, PL, XPS, magnetic and electrical properties. Experimental results indicate that: (1) All the films are well crystallized and display a pure orientation. (2) All the films have ferromagnetism, and the film deposited at 0.15 Pa has the biggest Ms. (3) There exist VZn, Oi, Zni, VZn- and VO defects in the four films above, and the percentage of resonance peak area for VZn to the total area of all defects as a function of oxygen pressure is similar to Ms, which means that the magnetizations of the samples are closely related to Zn vacancy VZn. There is a Cr3+ state in the four films when the content of Cr3+ is the largest at 0.15 Pa. To sum up, the experimental results indicate that the substitutive Cr in the oxidation state of t3 and the neutral Zn vacancy in the Zn0.97Cr0.03O films is the most favorable defect complex to maintain a high stability of ferromagnetic order, which is consistent with the calculated results by the first-principle calculations.

Keywords:

作者及机构信息

1.
福建师范大学物理与能源学院, 福建省量子调控与新能源材料重点实验室, 福州 350108

基金项目: 国家重点基础研究发展计划（973）项目（批准号：2011CBA00200）和国家自然科学基金（批准号：11004039）资助的课题.

Authors and contacts

1.
College of Physics and Energy Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350108, China

Funds: Project supported by the National Fundamental Research Program of China (Grant No. 2011CBA00200), and the National Science Foundation of China (Grant No. 11074039).

参考文献

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[46]	Xu P S, Sun Y M, Shi C S, Xu F Q, Pan H B 2001 Science China 30 358 (in Chinese)[徐彭寿, 孙玉明, 施朝淑, 徐法强, 潘海斌2001 中国科学30 358]
[47]	Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205
[48]	Clark S J, Robertson J, Lany S Zunger A 2010 Phys. Rev. B 81 115311
[49]	Yilmaz S, Parlak S Özcan, Altunbas M, McGlynn E, Bacaksz E 2011 Applied Surface Science 257 9293
[50]	Liu H L, Fei L H, Yang J H, Xin J, Liu Y, Liu X Y, Gao M 2011 Solid State Communications 151 1864
[51]	Lin Y B, Yang Y M, Zhuang M, Huang S L, Wu L P, Huang Z G Zhang F M, Du Y W 2008 J. Phys. D: Appl. Phys. 41 195007

施引文献

[1]	Pearton S J, Abernathy C R, Overerg M E, Thaler G T, Norton D P, Theodoropoulou N, Hebard A F, Park Y D, Ren F, Kim J, Boatner L A 2003 J. Appl. Phys. 93 1
[2]	Özgr , Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J, Morko? H 2005 J. Appl. Phys 98 041301
[3]	Liu C, Yun F, Morkoc H 2005 J. Mater. Sci.: Mater. Electr 16 597
[4]	Janisch R, Gopall P, Spaldin N A 2005 J. Phys.: Condens. Matter 17 R657
[5]	Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[6]	Sato K, Yoshida H K 2000 Jpn. J. Appl. Phys. 39 L555
[7]	Sato K, Yoshida H K 2002 Semicond. Sci. Technol. 17 367
[8]	Ueda K, Tabata H, Kawai T 2001 Appl. Phys. Lett. 79 988
[9]	Saeki H, Tabata H, Kawai T 2001 Solid State Commun. 120 439
[10]	Han S J, Jang T H, Kim Y B, Park B G, Park J H, Jeong Y H 2003 Appl. Phys. Lett. 83 920
[11]	Ramachandran S, Tiwari A, Narayan J 2004 Appl. Phys. Lett. 84 5255
[12]	Cheng X M, Chien C L 2003 J. Appl. Phys. 93 7876
[13]	Gupta P S A, Rao K V, Owens F J, Sharma R 2003 Nature Mater. 2 673
[14]	Kundaliya D C, Ogale S B, Lofland S E, Dhar S, Metting C J 2004 Nature Mater. 3 709
[15]	Sati P, Hayn R, Kuzian R, Ré gnier S, Schäfer S, Stepanov A, Morhain C, Deparis C, Lagt M, Goiran M, Golacki Z 2006 Phys. Rev. Lett. 96 017203
[16]	Norton D P, Overberg M E, Pearton S J, Pruessner K, Budai J D, Boatner L A, Chisholm M F, Lee J S, Khim Z G, Park Y D, Wilson R G 2003 Appl. Phys. Lett. 83 5488
[17]	Jung S W, An S J, Yi G C, Jung C U, Lee S I, Cho S 2002 Appl. Phys. Lett. 80 4561
[18]	Lee H J, Jeong S Y, Cho C R, Park C H 2002 Appl. Phys. Lett. 81 4020
[19]	Yan L, Ong C K, Rao X S 2004 J. Appl. Phys. 96 508
[20]	Ando K, Saito H, Jin Z W, Jin T, Kawasaki M, Matsumoto Y, Koinuma H 2001 J. Appl. Phys. 89 7284
[21]	Jin Z W, Fukumura T, Kawasaki M, Ando K, Saito H, Sekiguchi T, Yoo Y Z, Murakami M, Matsumoto Y, Hasegawa T, Koinuma H 2001 Appl. Phys. Lett. 78 3824
[22]	Weng Z Z, Zhang J M, Huang Z G, Lin W X 2011 Chin. Phys. B 20 027103
[23]	Pan H, Yi J B, Shen L, Wu R Q, Yang J H, Lin J Y, Feng Y P, Ding J, Van L H, Yin J H 2007 Phys. Rev. Lett. 99 127201
[24]	Chen S, Wu Q Y, Chen Z G, Xu G G, Huang Z G 2009 Acta Phys. Sin. 58 2011 (in Chinese)[陈珊, 吴青云, 陈志高, 许桂贵, 黄志高2009 58 2011]
[25]	Zhan P, Wang W P, Liu C, Hu Y, Li Z C, Zhang Z J, Wang B Y, Cao X Z 2012 J. Appl. Phys. 111 033501
[26]	Phadnis C, Darshana Y I, Igor D, Arjun P, Naushad A, Shailaja M 2011 J. Appl. Phys. 110 114316
[27]	Zhang B Y, Yao B, Li Y F, Liu A M, Zhang Z Z, Li B H, Xing G Z, Wu T, Qin X B, Zhao D, Shan C X, She D Z 2011 Appl. Phys. Lett. 99 182503
[28]	Kataoka T, Yamazaki Y, Singh V R, Fujimori A, ChangF H, Lin H J, Chen D C, Huang T J, Xing G Z, Seo J W, Panagopoulos C, Wu T 2011 Phys. Rev. B 84 153203
[29]	Xiong Z, Liu X C Zhuo S Y, Yang J H, Shi E W, Yan W S 2011 Appl. Phys. Lett. 99 052513
[30]	Liu W J, Li W W, Hu Z G, Tang Z, Tang X D 2011 J. Appl. Phys. 110 013901
[31]	Punnoose A, Seehra M S, Park W K, Moodera J S 2003 J. Appl. Phys. 93 7867
[32]	Sato H, Yoshida H K 2001 J. Appl. Phys 40 334
[33]	Yang L, Yang J H 2009 Journal of Alloys and Compounds 486 835
[34]	Weng Z Z, Huang Z G, Lin W X 2012 J. Appl. Phys. 111 113915
[35]	Wang Q, Sun Q, Jena P, Kawazoe Y 2005 Appl. Phys. Lett. 87 162509
[36]	Lee H J, Jeong SY, Hwang J Y, Cho C R 2003 Europhys. Lett. 64 797
[37]	Liu H, Zhang X, Li L, Wang YX, Li K H, Gao Z Q, Zheng R K, Ringer S P, Zhang B, Zhang X X 2007 Appl. Phys. Lett. 91 072511
[38]	Hu Y M, Li S S, Chia C H 2011 Appl. Phys. Lett. 98 052503
[39]	Wang B, Iqbal J, Shan X, Huang G, Fu H, Yu R, Yu D 2009 Mater. Chem. Phys. 113 103
[40]	Xiong Z, Liu X C, Zhuo S Y, Yang J H, Shi E W, Yan W S, Yao S D, Pan H P 2013 Appl. Phys. Lett. 102 022414
[41]	Ghosh S, Khan G G, Das B, Mandal K 2011 J. Appl. Phys. 109 123927
[42]	Kong Y C, Yu D P, Zhang B, Fang W, Feng S Q 2001 Appl. Phys. Lett. 78 407
[43]	Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigt J A, Gnade B E 1996 J. Appl. Phys. 79 7983
[44]	Djurisic A B, Leung Y H 2006 Small 2 944
[45]	Borseth T M, Svensson B G, Kuznetsov A Y 2006 Appl. Phys. Lett. 89 262112-l
[46]	Xu P S, Sun Y M, Shi C S, Xu F Q, Pan H B 2001 Science China 30 358 (in Chinese)[徐彭寿, 孙玉明, 施朝淑, 徐法强, 潘海斌2001 中国科学30 358]
[47]	Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205
[48]	Clark S J, Robertson J, Lany S Zunger A 2010 Phys. Rev. B 81 115311
[49]	Yilmaz S, Parlak S Özcan, Altunbas M, McGlynn E, Bacaksz E 2011 Applied Surface Science 257 9293
[50]	Liu H L, Fei L H, Yang J H, Xin J, Liu Y, Liu X Y, Gao M 2011 Solid State Communications 151 1864
[51]	Lin Y B, Yang Y M, Zhuang M, Huang S L, Wu L P, Huang Z G Zhang F M, Du Y W 2008 J. Phys. D: Appl. Phys. 41 195007

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