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Two-dimensional magnetic materials are emerging materials developed in recent years and have attracted much attention for their unique magnetic properties and structural features in single-layer or few layers of atomic thickness. Among them, ferromagnetic materials have a wide range of applications such as in information memory and processing. Therefore the current research mainly focuses on enriching the two-dimensional ferromagnetic database and developing modification strategies for magnetic modulation. In this work, two-dimensional vanadium-doped Cr2S3 nanosheets successfully grow on mica substrates by atmospheric pressure chemical vapour deposition. The thickness and size of the nanosheet can be effectively regulated by changing the temperature and mass of vanadium source VCl3 powder, with the temperature of 765 ℃ and the mass of 0.010 g as the most appropriate conditions for the growth of nanosheets. The nanosheets are also characterised by optical microscopy, atomic force microscopy, Raman spectroscopy, scanning electron microscopy, X-ray energy spectroscopy, and X-ray photoelectron spectroscopy, and the nanosheet is regular in shape, with flat surface and controllable thickness, and the high-quality vanadium-doped Cr2S3 nanosheet is prepared. Meanwhile, the magnetic characterisations of the doped samples show that the Curie transition temperatures of the vanadium doped samples change to 105 K, and the maximum magnetic moment point of 75 K in the M-T curve disappears after V doping, and from subferromagnetic material to ferromagnetic material, and the coercivity in the M-H curve also increases significantly, which proves that the vanadium doping can effectively regulate the magnetic properties of Cr2S3 nanosheets. These results are expected to advance the vanadium-doped Cr2S3 materials toward practical applications and become one of the ideal candidate materials for the next-generation spintronic applications.
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Keywords:
- two-dimensional magnetic materials /
- chemical vapour deposition /
- vanadium-doped Cr2S3 /
- ferromagnetism
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图 1 生长示意图 (a)化学气相沉积生长示意图; (b)生长过程温度设置曲线
Figure 1. Schematic diagram of growth setup: (a) Schematic diagram of chemical vapour deposition growth setup; (b) temperature setting curve of growth process.
图 2 不同钒源温度与质量条件下生长的纳米片光学形貌图 (a)—(c) 735, 750, 765 ℃钒源温度条件下生长的纳米片光学照片; (d)—(f) 0.005, 0.010, 0.015 g钒源质量条件下生长的纳米片光学照片
Figure 2. Optical morphology of nanosheets grown under different vanadium source temperature and mass conditions: Optical image of nanosheets grown under the vanadium source temperature conditions of (a) 735, (b) 750, and (c) 765 ℃; optical image of nanosheets grown under the vanadium source mass conditions of (d) 0.005, (e) 0.010, and (f) 0.015 g.
图 3 纳米片的AFM表征 (a)薄纳米片AFM表征; (b)厚纳米片AFM表征
Figure 3. AFM characterization of nanosheets: (a) AFM characterisation of thin nanosheet; (b) AFM characterization of thick nanosheet.
图 4 纳米片的拉曼光谱表征
Figure 4. Raman characterization of nanosheets.
图 5 纳米片SEM, EDS和XPS表征 (a) SEM照片; (b) EDS表征, 插图为元素百分比; (c)—(e)纳米片XPS图谱
Figure 5. SEM, EDS and XPS characterisation of nanosheets: (a) SEM image; (b) EDS characterisation, inset shows elemental percentages; (c)–(e) XPS spectrum of nanosheets.
图 6 纳米片的磁性测量 (a)—(c)纳米片面内磁场方向的M-T和 M-H曲线; (d)—(f)纳米片面外磁场方向的M-T和M-H曲线
Figure 6. Magnetic measurements of nanosheets: (a)–(c) M-T and M-H curves in the direction of the in-plane magnetic field of nanosheets; (d)–(f) M-T and M-H curves in the direction of the out-of-plane magnetic field of nanosheets
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[1] Burch K S, Mandrus D, Park J G 2018 Nature 563 47
Google Scholar
[2] Huang B, Clark G, Navarro-Moratalla E, Klein D R, Cheng R, Seyler K L, Zhong D, Schmidgall E, McGuire M A, Cobden D H, Yao W, Xiao D, Pablo Jarillo-Herrero P, Xu X D 2017 Nature 546 270
Google Scholar
[3] Klein D R, MacNeill D, Lado J L, Soriano D, Navarro-Moratalla E, Watanabe K, Taniguchi T, Manni S, Canfield P, Fernández-Rossier J, Jarillo-Herrero P 2018 Science 360 1218
Google Scholar
[4] Jiang S W, Li L Z, Wang Z F, Shan J, Mak K F 2019 Nat. Electron. 2 159
Google Scholar
[5] Lin X Y, Yang W, Wang K L, Zhao W S 2019 Nat. Electron. 2 274
Google Scholar
[6] Wang Z, Zhang T Y, Ding M, Dong B J, Li Y X, Chen M L, Li X X, Huang J Q, Wang H W, Zhao X T, Li Y, Li D, Jia C K, Sun L D, Guo H H, Ye Y, Sun D M, Chen Y S, Yang T, Zhang J, Ono S, Han Z, Zhang Z D 2018 Nat. Nanotechnol. 13 554
Google Scholar
[7] Bonilla M, Kolekar S, Ma Y J, Diaz H C, Kalappattil V, Das R, Eggers T, Gutierrez H R, Phan M H, Batzill M 2018 Nat. Nanotechnol. 13 289
Google Scholar
[8] Deng Y J, Yu Y J, Song Y C, Zhang J Z, Wang N Z, Sun Z Y, Yi Y F, Wu Y Z, Wu S W, Zhu J Y, Wang J, Chen X H, Zhang Y B 2018 Nature 563 94
Google Scholar
[9] Chen W J, Sun Z Y, Wang Z J, Gu L H, Xu X D, Wu S W, Gao C L 2019 Science 366 983
Google Scholar
[10] Jiang H N, Zhang P, Wang X G, Gong Y J 2021 Nano Res. 14 1789
Google Scholar
[11] Wang H, Wen Y, Zhao X X, Cheng R Q, Yin L, Zhai B X, Jiang J, Li Z W, Liu C S, Wu F C, He J 2023 Adv. Funct. Mater. 35 2211388
Google Scholar
[12] Lu S H, Zhou Q H, Guo Y L, Zhang Y H, Wu Y L, Wang J L 2020 Adv. Mater. 32 2002658
Google Scholar
[13] Guo Y L, Wang B, Zhang X W, Yuan S J, Ma L, Wang J L 2020 InfoMat 2 639
Google Scholar
[14] Zha H M, Li W, Zhang G J, Liu W J, Deng L W, Jiang Q, Ye M, Wu H, Chang H X, Qiao S 2023 Chin. Phys. Lett. 40 087501
Google Scholar
[15] Zhang Y L, Zhang Y Y, Ni J Y, Yang J H, Xiang H J, Gong X G 2021 Chin. Phys. Lett. 38 027501
Google Scholar
[16] Eremeev S V, Otrokov M M, Chulkov E V 2018 Nano Lett. 18 6521
Google Scholar
[17] Hu T, Zhao G D, Gao H, Wu Y B, Hong J S, Stroppa A, Ren W 2020 Phys. Rev. B 101 125401
Google Scholar
[18] Yang S X, Chen Y J, Jiang C B 2021 InfoMat 3 397
Google Scholar
[19] Abramchuk M, Jaszewski S, Metz K R, Osterhoudt G B, Wang Y P, Burch K S, Tafti F 2018 Adv. Mater. 30 1801325.
Google Scholar
[20] Duan H L, Guo P, Wang C, et al. 2019 Nat. Commum. 10 1584
Google Scholar
[21] Zhou S S, Wang R Y, Han J B, Wang D L, Li H Q, Gan L, Zhai T Y 2019 Adv. Funct. Mater. 29 1805880
Google Scholar
[22] Chu J W, Zhang Y, Wen Y, Qiao R X, Wu C C, He P, Yin L, Cheng R Q, Wang F, Wang Z X, Xiong J, Li Y R, He J 2019 Nano Lett. 19 2154
Google Scholar
[23] Cui F F, Zhao X X, Xu J J, Tang B, Shang Q Y, Shi J P, Huan Y H, Liao J H, Chen Q, Hou Y L, Zhang Q, Pennycook S J, Zhang Y F 2020 Adv. Mater. 32 1905896
Google Scholar
[24] Zhou X Y, Liu C, Song L T, et al. 2022 Sci. China-Phys. Mech. Astron. 65 276811
Google Scholar
[25] 杨瑞龙, 张钰樱 2023 材料工程 51 162
Google Scholar
Yang R L, Zhang Y Y 2023 J. Mater. Engineer. 51 162
Google Scholar
[26] Guo Y Q, Deng H T, Sun X, et al. 2017 Adv. Mater. 29 1700715
Google Scholar
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