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Fe doped TiO2 films are deposited on glass substrates using dc magnetron sputtering. The crystal structures and the magnetic properties of these films are studied. Room temperature ferromagnetism is observed in each of all the Fe doped TiO2 films. The source of magnetism is related to an exchange interaction between the transition-metal (Fe) ions and localized strapped holes. The maximal magnetization is observed in a TiO2 film with Fe concentration 7%. With the increase of Fe concentration, the crystal structure of TiO2 film transforms gradually from anatase phase to rutile phases, and magnetism in the film weakened. The changes of crystal structure and crystallization in TiO2 film resulting from Fe doping affect the change of ferromagnetism in the film.
[1] Pinto J V, Cruz M M, da Silva R C, Alves E, Godinhoa M 2005 J. Magn. Magn. Mater. 294 e73
[2] Lu Z L, Zou W Q, Xu M X, Zhang F M 2009 Acta Phys. Sin. 58 8467 (in Chinese) [路忠林,邹文琴,徐明祥,张凤鸣 2009 58 8467]
[3] Griffin K A, Pakhomov A B, Wang C M, Heald S M, Krishnan K M 2005 Phys. Rev. Lett. 94 157204
[4] Cheng XW, Li X, Gao Y L, Yu Z, Long X, Liu Y 2009 Acta Phys. Sin. 58 2018 (in Chinese) [程兴旺,李祥,高院玲,于宙,龙雪,刘颖 2009 58 2018]
[5] Li G K, Zhang X Q, Wu H Y, Huang W G, Jin J L, Sun Y, Cheng Z H 2009 Chin. Phys. B 18 3551
[6] Dietl T, Ohno H, Matsukura F 2000 Science 287 1019
[7] Meng H J, Hou D L, Jia L Y, Ye X J, Zhou H J, Li X L 2007 J. Appl. Phys. 102 073905
[8] Li X Y, Wu S X, Hu P, Xing X J, Liu Y J, Yu Y P, Yang M, Lu J Q, Li S W, Liu W 2009 J. Appl. Phys. 106 043913
[9] Drera G, MozzatiMC, Galinetto P, Diaz F Y, Malavasi L, Bondino F, Malvestuto M, Sangaletti L 2010 Appl. Phys. Lett. 97 012506
[10] Soo Y L, Kioseoglou G, Kim S, Kao Y H, Sujatha D P, Parise J, Gambino R J, Gouma P I 2002 Appl. Phys. Lett. 81 655
[11] Kim D H, Yang J S, Lee K W, Bu S D, Kim D W, Noh T W, Oh S J, Kim Y W, Chung J S, Tanaka H, Lee H Y, Kawai T, Won J Y, Park S H, Lee J C 2003 J. Appl. Phys. 93 6125
[12] Wei H, Yao T, Pan Z Y, Mai C, Sun Z H, Wu Z Y, Hu F C, Jiang Y, Yan W S 2009 J. Appl. Phys. 105 043903
[13] ZhangY B, Li S, Goh G K L, Tripathy S 2008 Appl. Phys. Lett. 93 102510
[14] Ma YW, Ding J, Yi J B, Zhang H T, Ng C M 2009 J. Appl. Phys. 105 07C503
[15] Ney V, Ye S, Kammermeier T, Ney A, Zhou H, Fallert J, Kalt H, Lo F Y, Melnikov A,Wieck A D 2008 J. Appl. Phys. 104 083904
[16] Seong N J, Yoon S G, Jo Y H, Jung M H, Cho C R, Yang J M 2006 Appl. Phys. Lett. 89 162109
[17] Lee Y J, Jong M P D, Jansen R 2010 Appl. Phys. Lett. 96 082506
[18] Gu J J, Liu L H, Qi Y K, Xu Q, Zhang H F, Sun H Y 2011 J. Appl. Phys. 109 023902
[19] Spurr R A, Myers H 1957 Anal. Chem. 29 760
[20] Qi Y K, Gu J J, Liu L H, Zhang H F, Xu Q, Sun H Y 2011 Acta Phys. Sin. 60 057502 (in Chinese) [岂云开, 顾建军, 刘力虎, 张海峰, 徐芹, 孙会元 2011 60 057502]
[21] Xu J P, Lin Y B, Lu Z H, Liu X C, Lu Z L, Wang J F, Zou W Q, Lü L Y, Zhang F M, Du Y W 2006 Solid State Communications 140 514
[22] Venkatesan M, Fitzgerald C B, Coey JMD 2004 Nature 430 630
[23] Shannon R D 1964 J. Appl. Phys. 35 3414
[24] Gennari F C, Pasquevich D M 1998 J. Mater. Sci. 33 1571
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[1] Pinto J V, Cruz M M, da Silva R C, Alves E, Godinhoa M 2005 J. Magn. Magn. Mater. 294 e73
[2] Lu Z L, Zou W Q, Xu M X, Zhang F M 2009 Acta Phys. Sin. 58 8467 (in Chinese) [路忠林,邹文琴,徐明祥,张凤鸣 2009 58 8467]
[3] Griffin K A, Pakhomov A B, Wang C M, Heald S M, Krishnan K M 2005 Phys. Rev. Lett. 94 157204
[4] Cheng XW, Li X, Gao Y L, Yu Z, Long X, Liu Y 2009 Acta Phys. Sin. 58 2018 (in Chinese) [程兴旺,李祥,高院玲,于宙,龙雪,刘颖 2009 58 2018]
[5] Li G K, Zhang X Q, Wu H Y, Huang W G, Jin J L, Sun Y, Cheng Z H 2009 Chin. Phys. B 18 3551
[6] Dietl T, Ohno H, Matsukura F 2000 Science 287 1019
[7] Meng H J, Hou D L, Jia L Y, Ye X J, Zhou H J, Li X L 2007 J. Appl. Phys. 102 073905
[8] Li X Y, Wu S X, Hu P, Xing X J, Liu Y J, Yu Y P, Yang M, Lu J Q, Li S W, Liu W 2009 J. Appl. Phys. 106 043913
[9] Drera G, MozzatiMC, Galinetto P, Diaz F Y, Malavasi L, Bondino F, Malvestuto M, Sangaletti L 2010 Appl. Phys. Lett. 97 012506
[10] Soo Y L, Kioseoglou G, Kim S, Kao Y H, Sujatha D P, Parise J, Gambino R J, Gouma P I 2002 Appl. Phys. Lett. 81 655
[11] Kim D H, Yang J S, Lee K W, Bu S D, Kim D W, Noh T W, Oh S J, Kim Y W, Chung J S, Tanaka H, Lee H Y, Kawai T, Won J Y, Park S H, Lee J C 2003 J. Appl. Phys. 93 6125
[12] Wei H, Yao T, Pan Z Y, Mai C, Sun Z H, Wu Z Y, Hu F C, Jiang Y, Yan W S 2009 J. Appl. Phys. 105 043903
[13] ZhangY B, Li S, Goh G K L, Tripathy S 2008 Appl. Phys. Lett. 93 102510
[14] Ma YW, Ding J, Yi J B, Zhang H T, Ng C M 2009 J. Appl. Phys. 105 07C503
[15] Ney V, Ye S, Kammermeier T, Ney A, Zhou H, Fallert J, Kalt H, Lo F Y, Melnikov A,Wieck A D 2008 J. Appl. Phys. 104 083904
[16] Seong N J, Yoon S G, Jo Y H, Jung M H, Cho C R, Yang J M 2006 Appl. Phys. Lett. 89 162109
[17] Lee Y J, Jong M P D, Jansen R 2010 Appl. Phys. Lett. 96 082506
[18] Gu J J, Liu L H, Qi Y K, Xu Q, Zhang H F, Sun H Y 2011 J. Appl. Phys. 109 023902
[19] Spurr R A, Myers H 1957 Anal. Chem. 29 760
[20] Qi Y K, Gu J J, Liu L H, Zhang H F, Xu Q, Sun H Y 2011 Acta Phys. Sin. 60 057502 (in Chinese) [岂云开, 顾建军, 刘力虎, 张海峰, 徐芹, 孙会元 2011 60 057502]
[21] Xu J P, Lin Y B, Lu Z H, Liu X C, Lu Z L, Wang J F, Zou W Q, Lü L Y, Zhang F M, Du Y W 2006 Solid State Communications 140 514
[22] Venkatesan M, Fitzgerald C B, Coey JMD 2004 Nature 430 630
[23] Shannon R D 1964 J. Appl. Phys. 35 3414
[24] Gennari F C, Pasquevich D M 1998 J. Mater. Sci. 33 1571
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