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Layered magnetoelectric Ni/PZT/TbFe2 composites have been prepared by electroless deposition and bonding method. The influence of the Ni layer thickness on ME coupling and resonance frequency is discussed. The results show that the magnetoelectric coefficient of Ni/PZT/TbFe2 composites changes differently from that of other composites and two remarkable resonance peaks have been observed. The magnetoelectric voltage coefficient at the first-order longitudinal resonance mode increases as the Ni layer thickness increases. Both experimental and calculated data reveal that the first-order bending resonance frequency fr1 and longitudinal resonance frequency fr2 increase with the Ni layer thickness.
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Keywords:
- magnetoelectric effect /
- positive magnetostrictive /
- negative magnetostrictive /
- resonance frequency
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[10] Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceramics 8 107
[11] Pan D A, Bai Y, Chu W Y, Qiao L J 2008 J. Phys.:Condens. Matter. 20 025203
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[13] Dong S X, Zhai J Y, Xing Z P, Li J F, Viehland D 2007 Appl. Phys. Lett. 91 022915
[14] Chashin D V, Fetisov Y K, Tafintseva E V, Srinivasan G 2008 Solid State Commun. 148 55
[15] Bi K, Wang Y G 2010 Solid State Commun. 150 248
[16] Bi K, Wang Y G, Wu W, Pan D A 2010 J. Phys. D.:Appl. Phys. 43 132002
[17] Pan D A, Zhang S G, Tian J J, Sun J S, Volinsky A A, Qiao L J 2010 Chin. Phys. B 19 027201
[18] Bian L X, Wen Y M, Li P 2009 Acta Phys. Sin. 58 4205 (in Chinese) [卞雷祥、文玉梅、李 平 2009 58 4205]
[19] Zhang Y F, Wen Y M, Li P, Bian L X 2009 Acta Phys. Sin. 58 0546 (in Chinese) [张延芳、文玉梅、李 平、卞雷祥 2009 58 0546]
[20] Wan J G, Li Z Y, Wang Y, Zeng M, Wang G H, Liu J M 2005 Appl. Phys. Lett. 86 202504
[21] Nan C W, Liu G, Lin Y H 2003 Appl. Phys. Lett. 83 4366
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[1] Landau L D, Lifshitz E M 1960 Electrodynamics of continuous media (Oxford Pergamon Press) p417
[2] Eerenstein W, Mathur N D, Scott J F 2006 Nature 442 759
[3] Fetisov Y K, Bush A A, Kamentsev K E, Ostashchenko A Y, Srinivasan G 2006 IEEE Sens. J. 6 935
[4] Fiebig M 2005 J. Phys. D.:Appl. Phys. 38 R123
[5] Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101
[6] Bibes M, Barthelemy A 2008 Nat. Mater. 7 425
[7] Israel C, Mathur N D, Scott J F 2008 Nat. Mater. 7 93
[8] Folen V J, Rado G T, Stalder E W 1961 Phys. Rev. Lett. 6 607
[9] Zhong C G, Jiang Q, Fang J H, Ge C W 2009 Acta Phys. Sin. 58 3491 (in Chinese) [仲崇贵、蒋 青、方靖淮、葛存旺 2009 58 3491]
[10] Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceramics 8 107
[11] Pan D A, Bai Y, Chu W Y, Qiao L J 2008 J. Phys.:Condens. Matter. 20 025203
[12] Laletin V M, Paddubnaya N, Srinivasan G, De Vreugd C P, Bichurin M I, Petrov V M, Filippov D A 2005 Appl. Phys. Lett. 87 222507
[13] Dong S X, Zhai J Y, Xing Z P, Li J F, Viehland D 2007 Appl. Phys. Lett. 91 022915
[14] Chashin D V, Fetisov Y K, Tafintseva E V, Srinivasan G 2008 Solid State Commun. 148 55
[15] Bi K, Wang Y G 2010 Solid State Commun. 150 248
[16] Bi K, Wang Y G, Wu W, Pan D A 2010 J. Phys. D.:Appl. Phys. 43 132002
[17] Pan D A, Zhang S G, Tian J J, Sun J S, Volinsky A A, Qiao L J 2010 Chin. Phys. B 19 027201
[18] Bian L X, Wen Y M, Li P 2009 Acta Phys. Sin. 58 4205 (in Chinese) [卞雷祥、文玉梅、李 平 2009 58 4205]
[19] Zhang Y F, Wen Y M, Li P, Bian L X 2009 Acta Phys. Sin. 58 0546 (in Chinese) [张延芳、文玉梅、李 平、卞雷祥 2009 58 0546]
[20] Wan J G, Li Z Y, Wang Y, Zeng M, Wang G H, Liu J M 2005 Appl. Phys. Lett. 86 202504
[21] Nan C W, Liu G, Lin Y H 2003 Appl. Phys. Lett. 83 4366
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