Cu掺杂ZnO磁性能的实验与理论研究

王锋; 林闻; 王丽兹; 葛永明; 张小婷; 林海容; 黄伟伟; 黄俊钦; W. Cao

doi:10.7498/aps.63.157502

摘要

采用固相反应法制备了Cu掺杂ZnO样品. 在室温下Cu含量3%的样品在室温下表现为铁磁性. 样品为n型半导体，载流子的浓度为1015cm-3. 利用密度泛函理论（DFT+U）计算了CuZnO体系的Cu2+O2-Cu2+，Cu2+VoCu2+，Cu2+Vo+Cu2+，Cu2+Vo+ +Cu2+磁交换耦合作用，给出了不同束缚电荷的氧空穴Vo与Cu2+离子之间的超交换机理，提出了CuZnO 体系中铁磁性机理为Cu2+Vo++Cu2+束缚磁极化子模型.

关键词:

Abstract

Cux Zn1-xO were synthesized via the solid-state reaction route. Ferromagnetism was detected when the Cu percentage was bigger than 3%. The compounds were found to be the N-type semiconductors with a carrier concentration of 1015 cm-3. The DFT+U method was employed to calculate the magnetic exchange coupling of the Cu2+O2-Cu2+, Cu2+VoCu2+, Cu2+Vo+Cu2+, Cu2+Vo++Cu2+ in the CuZnO system, where Vo denoted the vacancy of oxygen. Different bound charge transfer schemes between the Vo and Cu2+ ions were revealed. The origin of the ferromagnetism was determined within the framework of the Cu2+Vo++Cu2+ bound magnetic polarons.

Keywords:

作者及机构信息

1.
泉州师范学院物理与信息工程学院, 泉州 362000;

2.
Department of Physics, University of Oulu, FIN-90014, Finland

基金项目: 福建省教育厅A类科技项目（批准号：JA12283）、泉州市科技项目（批准号：2012G11）、泉州市优秀人才培养专项经费（批准号：12A17）、Oulu University Strategic Funding，The grant from Research Council for Natural Sciences and Engineering of the Academy of Finland 资助的课题.

Authors and contacts

1.
Physics and Information Engineering School, Quanzhou Normal University, Quanzhou 362000, China;

2.
Department of Physics, University of Oulu, P.O. Box 3000, FIN-90014, Finland

Funds: Project supported by the Science and Technology Project of Department of Education, Fujian Province, China (Grant No. JA12283), the Science and Technology Program of Quanzhou, China (Grant No. 2012G11), the Quanzhou Excellent Talents Training Grant, China (Grant No.12A17), the Oulu University Strategic Funding, and the Research Council for Natural Sciences and Engineering of the Academy of Finland.

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施引文献

[1]	Ran C J, Yang H L, Wang Y K, Hassan F M, Zhou L G, Xu X G, Jiang Y 2013 Chin. Phys. B 22 067503
[2]
[3]
[4]	Zhu M Y, Liu C, Bo W Q. Shu J W, Hu Y M, Jin H M, Wang Sh W, Li Y 2012 Acta. Phys. Sin. 61 078106 (in Chinese) [朱明原, 刘聪, 薄伟强, 舒佳武, 胡业旻, 金红明, 王世伟, 李瑛 2012 61 078106]
[5]
[6]	Ye Y H, Lü, Zhang W G, Huang H W, Ye Zh Zh 2012 Acta. Phys. Sin. 61 036701 (in Chinese) [叶颖惠, 吕斌, 张维广, 黄宏文, 叶志镇 2012 61 036701]
[7]	Wang F, Pan R X, Lin H R 2012 Acta. Phys. Sin. 61 247501 (in Chinese) [王锋, 潘荣萱, 林海容 2012 61 247501]
[8]
[9]	Li T J, Li G P, Gao X X, Chen J Sh 2010 Chin. Phys. Lett. 27 087501
[10]
[11]	Xu Q Y, Zheng X H, Gong Y P 2010 Chin. Phys. B 19 077501
[12]
[13]	Sato K, Yoshida H K 2000 Jpn. J. Appl. Phys. 39 L555
[14]
[15]	Herng T S, Qi D C Berlijn T, Yi J B, Yang K S, Dai Y, Feng Y P, Santoso I, Sa'nchez-Hanke C, Gao X Y, Wee A T S, Ku W, Ding J, Rusydi A 2010 Phys. Rev. Lett. 105 207201
[16]
[17]
[18]	Buchholz D B, Chang R P H, Song J H, Ketterson J B 2005 Appl. Phys. Lett. 87 082504
[19]
[20]	Herng T S, Lau S P, Yu S F, Yang H Y, Ji X H, Chen J S, Yasui N, Inaba H 2006 J. Appl. Phys. 99 086101
[21]
[22]	Chakraborti D, Narayan J, Prater J T 2007 Appl. Phys. Lett. 90 062504
[23]
[24]	Hou D L, Ye X J, Meng H J, Zhou H J, Li X L, Zhen C M, Tang G D 2007 Appl. Phys. Lett. 90 142502
[25]
[26]	Xiao Zh L, Shi L B 2011 Journal of Crystal Growth 40 279 (in Chinese) [肖振林, 史力斌 2011 人工晶体学报 40 279]
[27]	Ye L H, Freeman J, Delley B 2006 Phys. Rev. B 73 033203
[28]
[29]	Huang L M, Rosa A L, Ahuja R 2006 Phys. Rev. B 74 075206
[30]
[31]	Coey J M D, Venkatesan M, Fitezgerald C B 2005 Nat. Mater. 4 173
[32]
[33]	Wang X F, Xu J B, Cheung W Y, An J, Ke N 2007 Appl. Phys. Lett. 90 212502
[34]
[35]	Chen G, Song Ch, Chen Ch, Gao Sh, Zeng F, Pan F 2012 Adv. Mater. 24 3515
[36]
[37]	Liu H L, Yang J H, Zhang Y J, Wang Y X, Wei M B Zhao L Y 2008 J. Semiconductors 29 2256 (in Chinese) [刘惠莲, 杨景海, 张永军, 王雅新, 魏茂斌, 赵立有 2008 半导体学报 29 2256]
[38]
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[40]
[41]	Kittel C, translated by Xiang J Z, Wu X H 2005 Introduction to Solid State Physics (Beijing: Chemical Industry Press) p132 (in Chinese) [Kittel C著, 项金钟, 吴兴惠译, 2005固体物理学导论 (北京: 化学工业出版社)第131页]
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[43]
[44]	Pan F, Ding B F, Fa T, Cheng F F, Zhou Sh Q, Yao Sh D 2011 Acta Phys. Sin. 60 108501 (in Chinese) [潘峰, 丁斌峰, 法涛, 成枫锋, 周生强, 姚淑德 2011 60 108501]
[45]	Dietal T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[46]
[47]
[48]	Wang F, Huang W W, Li Sh Y, Lian A Q, Zhang X T, Cao W 2013 J. Magn. and Magn. Mater. 340 5
[49]
[50]	Gopal P, Spaldin N A 2006 Phys Rev B 74 094418
[51]	Cohan A F, Ceder G, Morgen D, Van de Walle Chris G 2000 Phys. Rev. B 61 15019
[52]
[53]
[54]	Schramm L, Behr G, Löser W, Wetzig K 2005 J. Phase Equilib. Diffus 26 605
[55]	Sheetz R M, Ponomareva I, Richter E, Andriotisa N, Menon M 2009 Phys. Rev. B 80 195314
[56]
[57]
[58]	Wang F, Wang Y Y, Huang W W, Zhang X T, Li S Y 2012 Acta. Phys. Sin. 61 157503
[59]	Chanier T, Sargolzaei M, Opahle I, Hayn R, Koepernik K 2006 Phys. Rev. B 73 134418
[60]
[61]
[62]	Anderson P W 1950 Phys. Rev. 79 350
[63]	Anderson P W 1950 Phys. Rev. 79 705
[64]
[65]	Tang Y H, Zhang H, Cui L X, Ouyang Ch Y, Shi S Q, Tang W H, Li H, Lee J S, Chen L Q 2010 Phys. Rev. B 82 125104

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