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采用直流磁控反应共溅法制备了非磁性元素Al和磁性元素Co掺杂的ZnO薄膜, 样品原位真空退火后再空气退火处理. 利用X射线衍射仪(XRD) 和物理性能测量仪(PPMS) 对薄膜的结构和磁性进行了表征. XRD和PPMS结果表明, 不同的退火氛围对掺杂薄膜的结构和磁性有着很大的影响. 真空退火的Al掺杂ZnO薄膜没有观察到铁磁性, 而空气退火的样品却显示出明显的室温铁磁性, 铁磁性的来源与空气退火后导致Al和ZnO基体间电荷转移增强有关. 而对于Co掺杂ZnO薄膜, 真空退火后再空气退火, 室温铁磁性明显减弱. 其磁性变化与Co离子和ZnO基体间电荷转移导致磁性增强和间隙Co原子被氧化导致磁性减弱有关.The non-magnetic element Al and magnetic element Co doped ZnO films are prepared by dc magnetron sputtering The films were annealed first in vacuum and then in air. The crystal structures are analyzed by x-ray diffraction (XRD) and magnetic properties are measured by Physical Properties Measurement System (PPMS). The results show that annealing ambience has a great influence on structure and magnetic property of sample Al doped ZnO films annealed in vacuum show no room temperature ferromagnetism, but the ones annealed in air show room temperature ferromagnetism. The room temperature ferromagnetism may be associated with enhanced charge transfer between Al and ZnO films annealed in air. And for Co doped ZnO films annealed in air annealed, the ferromagnetism is weakened. The change of magnetism may be related to the competition between enhanced magnetism resulting from charge transfer between Al and ZnO and reduced magnetism resulting from interstitial Co atoms oxygenated.
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Keywords:
- diluted magnetic semiconductors /
- ferromagnetism /
- annealing ambience
[1] Ueda K, Tabata H, Kawai T 2001 Appl. Phys. Lett. 79 988
[2] Liu G. L, Cao Q, Deng J X 2007 Appl. Phys. Lett. 90 052504
[3] Sharma V K, Varma G D 2009 J. Appl. Phys. 105 07C510
[4] Lu Z L, Zou W Q, Xu M X, Zhang F M 2009 Acta Phys. Sin. 58 8467 (in Chinese) [路忠林, 邹文琴, 徐明祥, 张凤鸣 2009 58 8467]
[5] Lee H J, Jeong S Y, Cho C R, Park C H 2002 Appl. Phys. Lett. 81 4020
[6] Ramachandran S, Tiwari A, Narayan J 2004 Appl. Phys. Lett. 84 5255
[7] Rode K, Anane A, Mattana R 2003 J. Appl. Phys. 93 7676
[8] Park J H, Kim M G, Jang H M 2004 Appl. Phys. Lett. 84 1338
[9] Ma Y W, Ding J, Yi J B 2009 J. Appl. Phys. 105 07C503
[10] Qi Y K, Gu J J, Liu L H, Zhang H F, Xu Q, Sun H Y 2011 Acta Phys. Sin. 60 057502 (in Chinese) [岂云开, 顾建军, 刘力虎, 张海峰, 俆芹, 孙会元 2011 60 057502]
[11] Gu J J, Liu L H, Qi Y K, Xu Q, Zhang H F, Sun H Y 2011 J. Appl. Phys. 109 023902
[12] Wagner C D, Riggs W M, Davis L E, Moulder J F, Mullenberg G E 1979 Handbook of X-Ray Photoelectron Spectroscopy (Eden Prairie, MN, USA: Perkin-Elmer Corp)
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[1] Ueda K, Tabata H, Kawai T 2001 Appl. Phys. Lett. 79 988
[2] Liu G. L, Cao Q, Deng J X 2007 Appl. Phys. Lett. 90 052504
[3] Sharma V K, Varma G D 2009 J. Appl. Phys. 105 07C510
[4] Lu Z L, Zou W Q, Xu M X, Zhang F M 2009 Acta Phys. Sin. 58 8467 (in Chinese) [路忠林, 邹文琴, 徐明祥, 张凤鸣 2009 58 8467]
[5] Lee H J, Jeong S Y, Cho C R, Park C H 2002 Appl. Phys. Lett. 81 4020
[6] Ramachandran S, Tiwari A, Narayan J 2004 Appl. Phys. Lett. 84 5255
[7] Rode K, Anane A, Mattana R 2003 J. Appl. Phys. 93 7676
[8] Park J H, Kim M G, Jang H M 2004 Appl. Phys. Lett. 84 1338
[9] Ma Y W, Ding J, Yi J B 2009 J. Appl. Phys. 105 07C503
[10] Qi Y K, Gu J J, Liu L H, Zhang H F, Xu Q, Sun H Y 2011 Acta Phys. Sin. 60 057502 (in Chinese) [岂云开, 顾建军, 刘力虎, 张海峰, 俆芹, 孙会元 2011 60 057502]
[11] Gu J J, Liu L H, Qi Y K, Xu Q, Zhang H F, Sun H Y 2011 J. Appl. Phys. 109 023902
[12] Wagner C D, Riggs W M, Davis L E, Moulder J F, Mullenberg G E 1979 Handbook of X-Ray Photoelectron Spectroscopy (Eden Prairie, MN, USA: Perkin-Elmer Corp)
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