Experimental and theoretical studies on the influence of unintentionally doped carbon on magnetic properties in ZnMnO:N

Wu Kong-Ping; Gu Shu-Lin; Zhu Shun-Ming; Huang You-Rui; Zhou Meng-Ran

doi:10.7498/aps.61.057503

Abstract

Mn-N co-doped ZnO film on sapphire substrate is fabricated by metal-organic chemical vapor deposition method with changing the acceptor-doped source and importing the hydrogen and increasing the pressure to suppress carbon (C) approach gradually. X-ray diffraction displays the strong C-axis orientation. Raman sepectrum is employed to analyze vibration modes related to C elements. Hall measurements on the samples by van der Pauw method reveal the transition from n-type to p-type after suppression of C, which is possible due to the complex of (CN)O acting as a shallow donor. The first principles simulation calculation for Mn and N codoped ZnO crystals has been perfermed, and the total density of states reveals the strong p-d interaction and magnetic moment existing in the Mn and N codoped ZnO. The introduction of the complex of (CN)O, causes the p-d interaction to disappear and the magnetic moment to reduce even disappear. Therefore, the formation of magnetic bound polaron of Mn 3d electronics and N 2p local bound electronic determines the magnetic interaction effect, which can be explained from the theoretical predication on the Mn 3d and N 2p ferromagnetic (hole) coupling on the ferromagnetism.

Keywords:

Authors and contacts

1.
School of Electrical and Information Engineering, Anhui University of Science and Technology, Huainan 232001, China;
2.
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 60990312, 61025020) and the National High Technology Research and Development Program of China (Grant No. 2007AA03Z404).

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Cited By

[1]	özgür ü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Do?gan S,Avrutin V, Cho S J, Morko H 2005 J. Appl. Phys. 98 041301
[2]	Dietl T, Ohno H, Matsukura F 2000 Science 287 1019
[3]	Bi Y J, Guo Z Y, Sun H Q, Lin Z, Dong Y C 2008 Acta Phys. Sin.57 7800 (in Chinese) [毕艳军, 郭志友, 孙慧卿, 林竹, 董玉成 2008 57 7800]
[4]	Yu Z, Li X, Long X, Cheng XW,Wang J Y, Liu Y, Cao MS,WangF C 2008 Acta Phys. Sin. 57 4539 (in Chinese) [于宙, 李祥, 龙雪, 程兴旺, 王晶云, 刘颖, 曹茂盛, 王富耻 2008 57 4539]
[5]	Sharma P, Gupta A, Rao K V 2003 Nat. Mater. 2 673
[6]	Liu S M, Gu S L, Ye J D, Zhu S M, Liu W, Tang K, Shan Z P,Zhang R, Zheng Y D, Sun X W 2008 Appl. Phys. A 91 535
[7]	Wu K P, Gu S L, Tang K, Zhu S M, Xu M X, Zhang R, Zheng YD 2009 J. Appl. Phys. 106 113710
[8]	Wu K P, Gu S L, Tang K, Zhu S M, Zhang R, Zheng Y D 2011Thin Solid Films 519 2499
[9]	Nickel N H, Friedrich F, Rommeluère J F, Galtier P 2005 Appl.Phys. Lett. 87 211905
[10]	Tang K, Gu S L, Zhu S M, Liu J G, Chen H, Ye J D, Zhang RZheng Y D 2009 Appl. Phys. Lett. 95 192106
[11]	Chen H, Gu S L, Liu W, Zhu S M, Zheng Y D 2008 J. Appl. Phys.104 113511
[12]	Segall M D, Lindan P J D, Probert M J 2002 J. Phys. Cond. Matt.14 2717
[13]	Marlo M 2000 Phys. Rev. B 62 2899
[14]	Yuan D, Huang D H, Luo H F,Wang F H 2010 Acta Phys. Sin. 596457 (in Chinese) [袁娣, 黄多辉, 罗华锋, 王藩侯 2010 59 6457]
[15]	Duan M Y, Xu M, Zhou H P, Chen Q Y, Hu Z G, Dong C J 2007Acta Phys. Sin. 56 5359 (in Chinese) [段满益, 徐明, 周海平, 陈青云, 胡志刚, 董成军 2007 56 5359]
[16]	Ye J D, Gu S L, Zhu S M, Zhang R, Zheng Y D 2006 Appl. Phys.Lett. 88 101905
[17]	Tang K, Gu S L, Zhu S M, Liu W, Ye J D, Zhu J M, Zhang R,Zheng Y D, Sun X W 2008 Appl. Phys. Lett. 93 132107
[18]	Li X, Keyes B, Asher S, Zhang S B, Wei S H, Coutts T J, LimpijumnongS, van de Walle C G 2005 Appl. Phys. Lett. 86 122107
[19]	Li X, Asher S E, Limpijumnong S, Zhang S B,Wei S H, Barnes TM, Coutts T J, Noufi R 2006 J. Vac. Sci. Technol. A 24 1213
[20]	Zhang S B, Northrup J E 1991 Phys. Rev. Lett. 67 2339
[21]	Wang Q, Sun Q, Jena P, Kawazoe Y 2004 Phys. Rev. B 70 052408
[22]	Dietl T, Andrearczyk T, Lipinska A, Kiecana M, Tay M, Wu Y H2007 Phys. Rev. B 76 155312
[23]	Dietl T 2006 Nat. Mater. 5 673
[24]	Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205
[25]	Yadav M K, Sanyal B, Mookerjee A 2009 J. Magn. Magn. Mater.321 273
[26]	Liu Q H, Sun Z H, Yan W Y, Zhong W J, Pan Z Y, Hao L Y, WeiS Q 2007 Phys. Rev. B 76 245210
[27]	Liu E Z, He Y, Jiang J Z 2006 Appl. Phys. Lett. 89 122504
[28]	Hsu H S, Huang J C A, Huang Y H, Liao Y F, Lin M Z, Lee C H2006 Appl. Phys. Lett. 89 122504

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Vol. 61, Issue 5 - 2012-03-05

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