Ferromagnetism of Zn0.97Cr0.03O synthesized by PLD

Xie Ling-Ling; Chen Shui-Yuan; Liu Feng-Jin; Zhang Jian-Min; Lin Ying-Bin; Huang Zhi-Gao

doi:10.7498/aps.63.077102

Abstract

Four Zn0.97Cr0.03O films were deposited on quartz wafers in various oxygen environment (0, 0.05, 0.15 and 0.2 Pa) using pulsed laser deposition (PLD). The films were characterized by XRD, PL, XPS, magnetic and electrical properties. Experimental results indicate that: (1) All the films are well crystallized and display a pure orientation. (2) All the films have ferromagnetism, and the film deposited at 0.15 Pa has the biggest Ms. (3) There exist VZn, Oi, Zni, VZn- and VO defects in the four films above, and the percentage of resonance peak area for VZn to the total area of all defects as a function of oxygen pressure is similar to Ms, which means that the magnetizations of the samples are closely related to Zn vacancy VZn. There is a Cr3+ state in the four films when the content of Cr3+ is the largest at 0.15 Pa. To sum up, the experimental results indicate that the substitutive Cr in the oxidation state of t3 and the neutral Zn vacancy in the Zn0.97Cr0.03O films is the most favorable defect complex to maintain a high stability of ferromagnetic order, which is consistent with the calculated results by the first-principle calculations.

Keywords:

Authors and contacts

1.
College of Physics and Energy Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350108, China
Funds: Project supported by the National Fundamental Research Program of China (Grant No. 2011CBA00200), and the National Science Foundation of China (Grant No. 11074039).

References

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[38]	Hu Y M, Li S S, Chia C H 2011 Appl. Phys. Lett. 98 052503
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[47]	Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205
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[49]	Yilmaz S, Parlak S Özcan, Altunbas M, McGlynn E, Bacaksz E 2011 Applied Surface Science 257 9293
[50]	Liu H L, Fei L H, Yang J H, Xin J, Liu Y, Liu X Y, Gao M 2011 Solid State Communications 151 1864
[51]	Lin Y B, Yang Y M, Zhuang M, Huang S L, Wu L P, Huang Z G Zhang F M, Du Y W 2008 J. Phys. D: Appl. Phys. 41 195007

Cited By

[1]	Pearton S J, Abernathy C R, Overerg M E, Thaler G T, Norton D P, Theodoropoulou N, Hebard A F, Park Y D, Ren F, Kim J, Boatner L A 2003 J. Appl. Phys. 93 1
[2]	Özgr , Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J, Morko? H 2005 J. Appl. Phys 98 041301
[3]	Liu C, Yun F, Morkoc H 2005 J. Mater. Sci.: Mater. Electr 16 597
[4]	Janisch R, Gopall P, Spaldin N A 2005 J. Phys.: Condens. Matter 17 R657
[5]	Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[6]	Sato K, Yoshida H K 2000 Jpn. J. Appl. Phys. 39 L555
[7]	Sato K, Yoshida H K 2002 Semicond. Sci. Technol. 17 367
[8]	Ueda K, Tabata H, Kawai T 2001 Appl. Phys. Lett. 79 988
[9]	Saeki H, Tabata H, Kawai T 2001 Solid State Commun. 120 439
[10]	Han S J, Jang T H, Kim Y B, Park B G, Park J H, Jeong Y H 2003 Appl. Phys. Lett. 83 920
[11]	Ramachandran S, Tiwari A, Narayan J 2004 Appl. Phys. Lett. 84 5255
[12]	Cheng X M, Chien C L 2003 J. Appl. Phys. 93 7876
[13]	Gupta P S A, Rao K V, Owens F J, Sharma R 2003 Nature Mater. 2 673
[14]	Kundaliya D C, Ogale S B, Lofland S E, Dhar S, Metting C J 2004 Nature Mater. 3 709
[15]	Sati P, Hayn R, Kuzian R, Ré gnier S, Schäfer S, Stepanov A, Morhain C, Deparis C, Lagt M, Goiran M, Golacki Z 2006 Phys. Rev. Lett. 96 017203
[16]	Norton D P, Overberg M E, Pearton S J, Pruessner K, Budai J D, Boatner L A, Chisholm M F, Lee J S, Khim Z G, Park Y D, Wilson R G 2003 Appl. Phys. Lett. 83 5488
[17]	Jung S W, An S J, Yi G C, Jung C U, Lee S I, Cho S 2002 Appl. Phys. Lett. 80 4561
[18]	Lee H J, Jeong S Y, Cho C R, Park C H 2002 Appl. Phys. Lett. 81 4020
[19]	Yan L, Ong C K, Rao X S 2004 J. Appl. Phys. 96 508
[20]	Ando K, Saito H, Jin Z W, Jin T, Kawasaki M, Matsumoto Y, Koinuma H 2001 J. Appl. Phys. 89 7284
[21]	Jin Z W, Fukumura T, Kawasaki M, Ando K, Saito H, Sekiguchi T, Yoo Y Z, Murakami M, Matsumoto Y, Hasegawa T, Koinuma H 2001 Appl. Phys. Lett. 78 3824
[22]	Weng Z Z, Zhang J M, Huang Z G, Lin W X 2011 Chin. Phys. B 20 027103
[23]	Pan H, Yi J B, Shen L, Wu R Q, Yang J H, Lin J Y, Feng Y P, Ding J, Van L H, Yin J H 2007 Phys. Rev. Lett. 99 127201
[24]	Chen S, Wu Q Y, Chen Z G, Xu G G, Huang Z G 2009 Acta Phys. Sin. 58 2011 (in Chinese)[陈珊, 吴青云, 陈志高, 许桂贵, 黄志高2009 58 2011]
[25]	Zhan P, Wang W P, Liu C, Hu Y, Li Z C, Zhang Z J, Wang B Y, Cao X Z 2012 J. Appl. Phys. 111 033501
[26]	Phadnis C, Darshana Y I, Igor D, Arjun P, Naushad A, Shailaja M 2011 J. Appl. Phys. 110 114316
[27]	Zhang B Y, Yao B, Li Y F, Liu A M, Zhang Z Z, Li B H, Xing G Z, Wu T, Qin X B, Zhao D, Shan C X, She D Z 2011 Appl. Phys. Lett. 99 182503
[28]	Kataoka T, Yamazaki Y, Singh V R, Fujimori A, ChangF H, Lin H J, Chen D C, Huang T J, Xing G Z, Seo J W, Panagopoulos C, Wu T 2011 Phys. Rev. B 84 153203
[29]	Xiong Z, Liu X C Zhuo S Y, Yang J H, Shi E W, Yan W S 2011 Appl. Phys. Lett. 99 052513
[30]	Liu W J, Li W W, Hu Z G, Tang Z, Tang X D 2011 J. Appl. Phys. 110 013901
[31]	Punnoose A, Seehra M S, Park W K, Moodera J S 2003 J. Appl. Phys. 93 7867
[32]	Sato H, Yoshida H K 2001 J. Appl. Phys 40 334
[33]	Yang L, Yang J H 2009 Journal of Alloys and Compounds 486 835
[34]	Weng Z Z, Huang Z G, Lin W X 2012 J. Appl. Phys. 111 113915
[35]	Wang Q, Sun Q, Jena P, Kawazoe Y 2005 Appl. Phys. Lett. 87 162509
[36]	Lee H J, Jeong SY, Hwang J Y, Cho C R 2003 Europhys. Lett. 64 797
[37]	Liu H, Zhang X, Li L, Wang YX, Li K H, Gao Z Q, Zheng R K, Ringer S P, Zhang B, Zhang X X 2007 Appl. Phys. Lett. 91 072511
[38]	Hu Y M, Li S S, Chia C H 2011 Appl. Phys. Lett. 98 052503
[39]	Wang B, Iqbal J, Shan X, Huang G, Fu H, Yu R, Yu D 2009 Mater. Chem. Phys. 113 103
[40]	Xiong Z, Liu X C, Zhuo S Y, Yang J H, Shi E W, Yan W S, Yao S D, Pan H P 2013 Appl. Phys. Lett. 102 022414
[41]	Ghosh S, Khan G G, Das B, Mandal K 2011 J. Appl. Phys. 109 123927
[42]	Kong Y C, Yu D P, Zhang B, Fang W, Feng S Q 2001 Appl. Phys. Lett. 78 407
[43]	Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigt J A, Gnade B E 1996 J. Appl. Phys. 79 7983
[44]	Djurisic A B, Leung Y H 2006 Small 2 944
[45]	Borseth T M, Svensson B G, Kuznetsov A Y 2006 Appl. Phys. Lett. 89 262112-l
[46]	Xu P S, Sun Y M, Shi C S, Xu F Q, Pan H B 2001 Science China 30 358 (in Chinese)[徐彭寿, 孙玉明, 施朝淑, 徐法强, 潘海斌2001 中国科学30 358]
[47]	Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205
[48]	Clark S J, Robertson J, Lany S Zunger A 2010 Phys. Rev. B 81 115311
[49]	Yilmaz S, Parlak S Özcan, Altunbas M, McGlynn E, Bacaksz E 2011 Applied Surface Science 257 9293
[50]	Liu H L, Fei L H, Yang J H, Xin J, Liu Y, Liu X Y, Gao M 2011 Solid State Communications 151 1864
[51]	Lin Y B, Yang Y M, Zhuang M, Huang S L, Wu L P, Huang Z G Zhang F M, Du Y W 2008 J. Phys. D: Appl. Phys. 41 195007

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