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离子辐照半导体可以很好的改善半导体材料的磁学性质.用He+ 辐照Ga0.94Mn0.06As薄膜,可以较方便的调制Ga0.94Mn0.06As 薄膜中产生铁磁性载体的浓度.由于空穴居间而导致Ga0.94Mn0.06As薄膜的铁磁性, 可以通过He+的辐照来得到改善,其结果是Ga0.94Mn0.06As薄膜的矫顽力可以增加3倍多. 当He+辐照流强增加时, 居里温度和沿着样品面外磁化难轴方向的饱和磁场都减小了. 被辐照的Ga0.94Mn0.06As薄膜的电学性质和结构特征显示, He+辐照Ga0.94Mn0.06As薄膜可以有控制地改善它的铁磁性, 其结果源于He+辐照Ga0.94Mn0.06As薄膜所诱导产生电缺陷对空穴的补偿, 而不是He+辐照改变了Ga0.94Mn0.06As薄膜的结构.Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in Ga0.94Mn0.06As films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated Ga0.94Mn0.06As layers indicates that the controlled amending of magnetism results from a compensation of holes by generated electrical defects and not from a structural modification.
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Keywords:
- ion irradiation /
- ferromagnetism /
- magnetoresistance
[1] Fassbender, McCord J 2008 J. Magn. Magn. Mater. 320 579
[2] Chappert C, Bernas H, Ferré J, Kottler V, Jamet J P, Chen Y, Cambril E, Devolder T, Rousseaux F, Mathet V, Launois H 1998 Science 280 1919
[3] Matsukura F, Ohno H, Shen A, Sugawara Y 1998 Phys. Rev. B 57 R2037
[4] Xu Z F, Liu L L, Zhao Y T, Chen L, Zhu J, Wang Y Y, Xiao G Q 2008 Acta Phys. Sin. 57 3833 (in Chinese) [徐忠锋,刘丽莉,赵永涛, 陈亮,朱键,王瑜玉, 肖国青 2008 57 3833]]
[5] Ma Y G, He G W, Hu G, Chen Y, Duan X F 2001 Acta Phys. Sin. 51 620 (in Chinese) [马余刚, 何国伟, 胡岗, 陈一, 段晓峰 2002 100 620]
[6] Dietl T, Ohno H 2001 Physica E 9 185
[7] Jungwirth T, Sinova J, Mašek J, Kučra J, MacDonald A H 2006 Rev. Mod. Phys. 78 809
[8] Yamanouchi M, Chiba D, Matsukura F, Ohno H 2004 Nature 428 539
[9] Hümpfner S, Sawicki M, Pappert K,Wenisch J, Brunner K, Gould C, Schmidt G, Dietl T, Molenkamp L W 2007 Appl. Phys. Lett. 90 102102
[10] Wunderlich J, Irvine A C, Zemen J, Holy V, Rushforth A W, De Ranieri E, Rana U, Vyborny K, Sinova J, Foxon C T, Campion R P, Williams D A, Gallagher B L, Jungwirth T 2007 Phys. Rev. B 76 054424
[11] Pearton S J 1990 Mater. Sci. Rep. 4 313
[12] Deenapanray P N K, Gao Q, Jagadish C 2003 J. Appl. Phys. 93 9123
[13] Dietl T, Ohno H, Matsukura F, Cibert J, Ferr D 2000 Science 287 1019
[14] Thevenard L,Mauguin O, Largeau L, Theys B, Lema?itre A 2005 Appl. Phys. Lett. 87 182506
[15] Thevenard L, Largeau L, Mauguin O, Lema?itre A, Khazen Kh, Bardeleben H J 2007 Phys. Rev. B 75 195218
[16] Van Esch A, Van Bockstal L, De Boeck J, Verbanck G, Steenbergen A S,Wellmann P J, Grietens B, Bogaerts R, Herlach F, Borghs G 1997 Phys. Rev. B 56 13103
[17] Yoon I T, Kang T W, Kim K H, Kim D J 2005 J. Appl. Phys. 97 063902
[18] Oiwa A, Katsumoto S, Endo A, Hirasawa M, Iye Y, Ohno H, Matsukura F, Shen A, Sugawara Y 1997 Solid State Commun. 103 209
[19] Omiya T, Matsukura F, Dietl T, Ohno Y, Sakon T, Motokawa M, Ohno H 2000 Physica E 7 976
[20] Wang K Y, Edmonds K W, Campion R P, Zhao L X, Foxon C T, Gallagher B L 2005 Phys. Rev. B 72 085201
[21] Iye Y, Oiwa A, Endo A, Katsumoto S,Matsukura F, Shen A, Ohno H, Munekata H 1999 Mater. Sci. Eng. B 63 88
[22] Edmonds K W, Campion R P, Wang K -Y, Neumann A C, Gallagher B L, Foxon C T, Main P C 2003 J. Appl. Phys. 93 6787
[23] Ziegler J F, Biersack J P, Littmark U 1985 The Stopping, Range of Ions in Solids, Pergamon, New York
[24] Carmeli I, Bloom F, Gwinn E G, Kreutz T C, Scoby C, Gossard A C 2006 Appl. Phys. Lett. 89 112508
[25] Kreutz T C, Artzi R, Gwinn E G, Naaman R, Pizem H, Sukenik C N 2003 Appl. Phys. Lett. 83 4211-3
[26] Wang B, Zhao YW, Dong Z Y, Deng A H,Miao S S, Yang J 2007 Acta Phys. Sin. 56 1603 (in Chinese) [王博, 赵有文, 董志远, 邓爱红, 苗杉杉, 杨 俊 2007 56 1603]
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[1] Fassbender, McCord J 2008 J. Magn. Magn. Mater. 320 579
[2] Chappert C, Bernas H, Ferré J, Kottler V, Jamet J P, Chen Y, Cambril E, Devolder T, Rousseaux F, Mathet V, Launois H 1998 Science 280 1919
[3] Matsukura F, Ohno H, Shen A, Sugawara Y 1998 Phys. Rev. B 57 R2037
[4] Xu Z F, Liu L L, Zhao Y T, Chen L, Zhu J, Wang Y Y, Xiao G Q 2008 Acta Phys. Sin. 57 3833 (in Chinese) [徐忠锋,刘丽莉,赵永涛, 陈亮,朱键,王瑜玉, 肖国青 2008 57 3833]]
[5] Ma Y G, He G W, Hu G, Chen Y, Duan X F 2001 Acta Phys. Sin. 51 620 (in Chinese) [马余刚, 何国伟, 胡岗, 陈一, 段晓峰 2002 100 620]
[6] Dietl T, Ohno H 2001 Physica E 9 185
[7] Jungwirth T, Sinova J, Mašek J, Kučra J, MacDonald A H 2006 Rev. Mod. Phys. 78 809
[8] Yamanouchi M, Chiba D, Matsukura F, Ohno H 2004 Nature 428 539
[9] Hümpfner S, Sawicki M, Pappert K,Wenisch J, Brunner K, Gould C, Schmidt G, Dietl T, Molenkamp L W 2007 Appl. Phys. Lett. 90 102102
[10] Wunderlich J, Irvine A C, Zemen J, Holy V, Rushforth A W, De Ranieri E, Rana U, Vyborny K, Sinova J, Foxon C T, Campion R P, Williams D A, Gallagher B L, Jungwirth T 2007 Phys. Rev. B 76 054424
[11] Pearton S J 1990 Mater. Sci. Rep. 4 313
[12] Deenapanray P N K, Gao Q, Jagadish C 2003 J. Appl. Phys. 93 9123
[13] Dietl T, Ohno H, Matsukura F, Cibert J, Ferr D 2000 Science 287 1019
[14] Thevenard L,Mauguin O, Largeau L, Theys B, Lema?itre A 2005 Appl. Phys. Lett. 87 182506
[15] Thevenard L, Largeau L, Mauguin O, Lema?itre A, Khazen Kh, Bardeleben H J 2007 Phys. Rev. B 75 195218
[16] Van Esch A, Van Bockstal L, De Boeck J, Verbanck G, Steenbergen A S,Wellmann P J, Grietens B, Bogaerts R, Herlach F, Borghs G 1997 Phys. Rev. B 56 13103
[17] Yoon I T, Kang T W, Kim K H, Kim D J 2005 J. Appl. Phys. 97 063902
[18] Oiwa A, Katsumoto S, Endo A, Hirasawa M, Iye Y, Ohno H, Matsukura F, Shen A, Sugawara Y 1997 Solid State Commun. 103 209
[19] Omiya T, Matsukura F, Dietl T, Ohno Y, Sakon T, Motokawa M, Ohno H 2000 Physica E 7 976
[20] Wang K Y, Edmonds K W, Campion R P, Zhao L X, Foxon C T, Gallagher B L 2005 Phys. Rev. B 72 085201
[21] Iye Y, Oiwa A, Endo A, Katsumoto S,Matsukura F, Shen A, Ohno H, Munekata H 1999 Mater. Sci. Eng. B 63 88
[22] Edmonds K W, Campion R P, Wang K -Y, Neumann A C, Gallagher B L, Foxon C T, Main P C 2003 J. Appl. Phys. 93 6787
[23] Ziegler J F, Biersack J P, Littmark U 1985 The Stopping, Range of Ions in Solids, Pergamon, New York
[24] Carmeli I, Bloom F, Gwinn E G, Kreutz T C, Scoby C, Gossard A C 2006 Appl. Phys. Lett. 89 112508
[25] Kreutz T C, Artzi R, Gwinn E G, Naaman R, Pizem H, Sukenik C N 2003 Appl. Phys. Lett. 83 4211-3
[26] Wang B, Zhao YW, Dong Z Y, Deng A H,Miao S S, Yang J 2007 Acta Phys. Sin. 56 1603 (in Chinese) [王博, 赵有文, 董志远, 邓爱红, 苗杉杉, 杨 俊 2007 56 1603]
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