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The non-magnetic element Al and magnetic element Co doped ZnO films are prepared by dc magnetron sputtering The films were annealed first in vacuum and then in air. The crystal structures are analyzed by x-ray diffraction (XRD) and magnetic properties are measured by Physical Properties Measurement System (PPMS). The results show that annealing ambience has a great influence on structure and magnetic property of sample Al doped ZnO films annealed in vacuum show no room temperature ferromagnetism, but the ones annealed in air show room temperature ferromagnetism. The room temperature ferromagnetism may be associated with enhanced charge transfer between Al and ZnO films annealed in air. And for Co doped ZnO films annealed in air annealed, the ferromagnetism is weakened. The change of magnetism may be related to the competition between enhanced magnetism resulting from charge transfer between Al and ZnO and reduced magnetism resulting from interstitial Co atoms oxygenated.
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Keywords:
- diluted magnetic semiconductors /
- ferromagnetism /
- annealing ambience
[1] Ueda K, Tabata H, Kawai T 2001 Appl. Phys. Lett. 79 988
[2] Liu G. L, Cao Q, Deng J X 2007 Appl. Phys. Lett. 90 052504
[3] Sharma V K, Varma G D 2009 J. Appl. Phys. 105 07C510
[4] Lu Z L, Zou W Q, Xu M X, Zhang F M 2009 Acta Phys. Sin. 58 8467 (in Chinese) [路忠林, 邹文琴, 徐明祥, 张凤鸣 2009 58 8467]
[5] Lee H J, Jeong S Y, Cho C R, Park C H 2002 Appl. Phys. Lett. 81 4020
[6] Ramachandran S, Tiwari A, Narayan J 2004 Appl. Phys. Lett. 84 5255
[7] Rode K, Anane A, Mattana R 2003 J. Appl. Phys. 93 7676
[8] Park J H, Kim M G, Jang H M 2004 Appl. Phys. Lett. 84 1338
[9] Ma Y W, Ding J, Yi J B 2009 J. Appl. Phys. 105 07C503
[10] Qi Y K, Gu J J, Liu L H, Zhang H F, Xu Q, Sun H Y 2011 Acta Phys. Sin. 60 057502 (in Chinese) [岂云开, 顾建军, 刘力虎, 张海峰, 俆芹, 孙会元 2011 60 057502]
[11] Gu J J, Liu L H, Qi Y K, Xu Q, Zhang H F, Sun H Y 2011 J. Appl. Phys. 109 023902
[12] Wagner C D, Riggs W M, Davis L E, Moulder J F, Mullenberg G E 1979 Handbook of X-Ray Photoelectron Spectroscopy (Eden Prairie, MN, USA: Perkin-Elmer Corp)
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[1] Ueda K, Tabata H, Kawai T 2001 Appl. Phys. Lett. 79 988
[2] Liu G. L, Cao Q, Deng J X 2007 Appl. Phys. Lett. 90 052504
[3] Sharma V K, Varma G D 2009 J. Appl. Phys. 105 07C510
[4] Lu Z L, Zou W Q, Xu M X, Zhang F M 2009 Acta Phys. Sin. 58 8467 (in Chinese) [路忠林, 邹文琴, 徐明祥, 张凤鸣 2009 58 8467]
[5] Lee H J, Jeong S Y, Cho C R, Park C H 2002 Appl. Phys. Lett. 81 4020
[6] Ramachandran S, Tiwari A, Narayan J 2004 Appl. Phys. Lett. 84 5255
[7] Rode K, Anane A, Mattana R 2003 J. Appl. Phys. 93 7676
[8] Park J H, Kim M G, Jang H M 2004 Appl. Phys. Lett. 84 1338
[9] Ma Y W, Ding J, Yi J B 2009 J. Appl. Phys. 105 07C503
[10] Qi Y K, Gu J J, Liu L H, Zhang H F, Xu Q, Sun H Y 2011 Acta Phys. Sin. 60 057502 (in Chinese) [岂云开, 顾建军, 刘力虎, 张海峰, 俆芹, 孙会元 2011 60 057502]
[11] Gu J J, Liu L H, Qi Y K, Xu Q, Zhang H F, Sun H Y 2011 J. Appl. Phys. 109 023902
[12] Wagner C D, Riggs W M, Davis L E, Moulder J F, Mullenberg G E 1979 Handbook of X-Ray Photoelectron Spectroscopy (Eden Prairie, MN, USA: Perkin-Elmer Corp)
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