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Cao Jian-Qiu, Zhou Shang-De, Liu Peng-Fei, Huang Zhi-He, Wang Ze-Feng, Si Lei, Chen Jin-Bao. Theoretical study on radiation effect on threshold of transverse mode instability of Yb-doped fiber amplifiers. Acta Physica Sinica,
2024, 73(20): 204202.
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Li Gui-Hua, Zhang Meng-Ya, Ma Hui, Tian Yue, Jiao An-Xin, Zheng Lin-Qi, Wang Chang, Chen Ming, Liu Xiang-Dong, Li Shuang, Cui Qing-Qiang, Li Guan-Hua. Low temperature-promoted surface plasmon resonance effect and ultrasensitive surface-enhanced Raman scattering detection of creatinine. Acta Physica Sinica,
2022, 71(14): 146101.
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Li Zhe-Fu, Jia Yan-Yan, Liu Ren-Duo, Xu Yu-Hai, Wang Guang-Hong, Xia Xiao-Bin. Irradiation effect of Sm2Co17 type permanent magnets. Acta Physica Sinica,
2017, 66(22): 226101.
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Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei. Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica,
2015, 64(13): 136104.
doi: 10.7498/aps.64.136104
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Liu Hong-Xia, Wang Zhi, Zhuo Qing-Qing, Wang Qian-Qiong. Influence of channel length on PD SOI PMOS devices under total dose irradiation. Acta Physica Sinica,
2014, 63(1): 016102.
doi: 10.7498/aps.63.016102
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Li Ming-Jie, Gao Hong, Li Jiang-Lu, Wen Jing, Li Kai, Zhang Wei-Guang. Electrical properties of single ZnO nanobelt in low temperature. Acta Physica Sinica,
2013, 62(18): 187302.
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He Yong-Zhou, Zhou Qiao-Gen. Magnetic properties of permanent magnet for cryogenic undulator of permanent Shanghai synchrotron radiation facility. Acta Physica Sinica,
2013, 62(4): 044106.
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica,
2013, 62(19): 196104.
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Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing. Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica,
2012, 61(24): 246101.
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica,
2010, 59(2): 1258-1262.
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He Bao-Ping, Yao Zhi-Bin. Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment. Acta Physica Sinica,
2010, 59(3): 1985-1990.
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Qiao Hui, Liao Yi, Hu Wei-Da, Deng Yi, Yuan Yong-Gang, Zhang Qin-Yao, Li Xiang-Yang, Gong Hai-Mei. Real-time study of γ irradiation on Hg1-xCdxTe focal plane photodiodes. Acta Physica Sinica,
2008, 57(11): 7088-7093.
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang. The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica,
2008, 57(9): 5869-5874.
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Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin. A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica,
2007, 56(6): 3400-3406.
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Xu Geng-Zhao, Liang Hu, Bai Yong-Qiang, Lau Kei-May, Zhu Xing. Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy. Acta Physica Sinica,
2005, 54(11): 5344-5349.
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He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong. Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica,
2004, 53(9): 3125-3129.
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Yang Lin-An, Zhang Yi-Men, Yu Chun-Li, Zhang Yu-Ming. Trapping effect modeling for SiC power MESFETs. Acta Physica Sinica,
2003, 52(2): 302-306.
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia. Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica,
2003, 52(4): 830-833.
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REN HONG-XIA, HAO YUE, XU DONG-GANG. STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica,
2000, 49(7): 1241-1248.
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WANG JIAN-PING, XU NA-JUN, ZHANG TING-QING, TANG HUA-LIAN, LIU JIA-LU, LIU CHUAN -YANG, YAO YU-JUAN, PENG HONG-LUN, HE BAO-PING, ZHANG ZHENG-XUAN. TEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR. Acta Physica Sinica,
2000, 49(7): 1331-1334.
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