| [1] |
Wu Peng, Zhu Hong-Yu, Wu Jin-Xing, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode. Acta Physica Sinica,
2023, 72(17): 178501.
doi: 10.7498/aps.72.20230709
|
| [2] |
Wu Peng, Li Ruo-Han, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatment. Acta Physica Sinica,
2023, 72(19): 198501.
doi: 10.7498/aps.72.20230553
|
| [3] |
Wang Hai-Bo, Wan Li-Juan, Fan Min, Yang Jin, Lu Shi-Bin, Zhang Zhong-Xiang. Barrier-tunable gallium oxide Schottky diode. Acta Physica Sinica,
2022, 71(3): 037301.
doi: 10.7498/aps.71.20211536
|
| [4] |
Gao Hui-Fen, Zhou Xiao-Fang, Huang Xue-Qin. Zak phase induced interface states in two-dimensional phononic crystals. Acta Physica Sinica,
2022, 71(4): 044301.
doi: 10.7498/aps.71.20211642
|
| [5] |
Song Jian-Jun, Zhang Long-Qiang, Chen Lei, Zhou Liang, Sun Lei, Lan Jun-Feng, Xi Chu-Hao, Li Jia-Hao. A Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission based on crystal orientation optimization and Sn alloying technology. Acta Physica Sinica,
2021, 70(10): 108401.
doi: 10.7498/aps.70.20201674
|
| [6] |
. Barrier Tunable Gallium oxide Schottky diode. Acta Physica Sinica,
2021, (): .
doi: 10.7498/aps.70.20211536
|
| [7] |
. Zak phase induces interface states in two-dimensional phononic crystals. Acta Physica Sinica,
2021, (): .
doi: 10.7498/aps.70.20211642
|
| [8] |
Li Yu-Chen, Chen Hang-Yu, Song Jian-Jun. Ge Schottky diode for improving energy conversion efficiency of the receiver of microwave wireless power transfer. Acta Physica Sinica,
2020, 69(10): 108401.
doi: 10.7498/aps.69.20191415
|
| [9] |
Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An. Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons. Acta Physica Sinica,
2018, 67(16): 166101.
doi: 10.7498/aps.67.20180829
|
| [10] |
Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei. -ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica,
2016, 65(20): 207301.
doi: 10.7498/aps.65.207301
|
| [11] |
Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei. Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica,
2015, 64(13): 136104.
doi: 10.7498/aps.64.136104
|
| [12] |
Zhai Dong-Yuan, Zhao Yi, Cai Yin-Fei, Shi Yi, Zheng You-Dou. Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode. Acta Physica Sinica,
2014, 63(12): 127201.
doi: 10.7498/aps.63.127201
|
| [13] |
Liu Yu-An, Zhuang Yi-Qi, Du Lei, Su Ya-Hui. 1/f noise characterization gamma irradiation of GaN-based blue light-emitting diode. Acta Physica Sinica,
2013, 62(14): 140703.
doi: 10.7498/aps.62.140703
|
| [14] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica,
2012, 61(6): 067801.
doi: 10.7498/aps.61.067801
|
| [15] |
Liu Yu-Dong, Du Lei, Sun Peng, Chen Wen-Hao. The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes. Acta Physica Sinica,
2012, 61(13): 137203.
doi: 10.7498/aps.61.137203
|
| [16] |
Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2011, 60(6): 068702.
doi: 10.7498/aps.60.068702
|
| [17] |
Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica,
2008, 57(8): 5205-5211.
doi: 10.7498/aps.57.5205
|
| [18] |
Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin. A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica,
2007, 56(6): 3400-3406.
doi: 10.7498/aps.56.3400
|
| [19] |
Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang. Noise as a representation for reliability of light emitting diode. Acta Physica Sinica,
2006, 55(3): 1384-1389.
doi: 10.7498/aps.55.1384
|
| [20] |
Yang Lin-An, Zhang Yi-Men, Yu Chun-Li, Zhang Yu-Ming. Trapping effect modeling for SiC power MESFETs. Acta Physica Sinica,
2003, 52(2): 302-306.
doi: 10.7498/aps.52.302
|
下载:
