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Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen. Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment. Acta Physica Sinica,
2021, 70(15): 156101.
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Li Zhe-Fu, Jia Yan-Yan, Liu Ren-Duo, Xu Yu-Hai, Wang Guang-Hong, Xia Xiao-Bin. Irradiation effect of Sm2Co17 type permanent magnets. Acta Physica Sinica,
2017, 66(22): 226101.
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Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei. Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica,
2015, 64(13): 136104.
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Chen Hai-Peng, Cao Jun-Sheng, Guo Shu-Xu. Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser. Acta Physica Sinica,
2013, 62(10): 104209.
doi: 10.7498/aps.62.104209
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Liu Yu-An, Zhuang Yi-Qi, Du Lei, Su Ya-Hui. 1/f noise characterization gamma irradiation of GaN-based blue light-emitting diode. Acta Physica Sinica,
2013, 62(14): 140703.
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Wu Shao-Bing, Chen Shi, Li Hai, Yang Xiao-Fei. Researching progress of the 1/f noise in TMR and GMR sensors. Acta Physica Sinica,
2012, 61(9): 097504.
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica,
2012, 61(10): 107803.
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica,
2012, 61(6): 067801.
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Bao Jun-Lin, Lin Li-Yan, He Liang, Du Lei. Noise as a characteriscic for current transmitting rateof optoelectronic coupled devicesfor ionization radiation damage. Acta Physica Sinica,
2011, 60(4): 047202.
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Dai Yu, Zhang Jian-Xun. Reduction of 1/f noise in semiconductor devices based on wavelet transform and Wiener filter. Acta Physica Sinica,
2011, 60(11): 110516.
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica,
2010, 59(2): 1258-1262.
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Zhang Zhen-Guo, Gao Feng-Li, Guo Shu-Xu, Li Xue-Yan, Yu Si-Yao. A novel method to estimate the parameters of 1/f noise of semiconductor laser diodes. Acta Physica Sinica,
2009, 58(4): 2772-2775.
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Chen Wei-Hua, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Zhang Tian-Fu, Zhang Xue. A model considering the ionizing radiation effects in MOS structure. Acta Physica Sinica,
2009, 58(6): 4090-4095.
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Qiao Hui, Liao Yi, Hu Wei-Da, Deng Yi, Yuan Yong-Gang, Zhang Qin-Yao, Li Xiang-Yang, Gong Hai-Mei. Real-time study of γ irradiation on Hg1-xCdxTe focal plane photodiodes. Acta Physica Sinica,
2008, 57(11): 7088-7093.
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Sun Guang-Ai, Hu Gang-Yi, Yang Mo-Hua, Xu Shi-Liu, Zhang Zheng-Fan, Liu Yu-Kui, He Kai-Quan, Zhong Yi. Study of conductive property for a N-VDMOS interface trap under X-ray radiation. Acta Physica Sinica,
2008, 57(3): 1872-1877.
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang. The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica,
2008, 57(9): 5869-5874.
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Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica,
2008, 57(8): 5205-5211.
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Sun Tao, Chen Xing-Guo, Hu Xiao-Ning, Li Yan-Jin. Analysis of surface leakage and 1/f noise on long-wavelength infrared HgCdTe photodiodes. Acta Physica Sinica,
2005, 54(7): 3357-3362.
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Bao Jun-Lin, Zhuang Yi-Qi, Du Lei, Li Wei-Hua, Wan Chang-Xing, Zhang Ping. A unified model for 1/f noise in n-channel and p-channel MOSFETs. Acta Physica Sinica,
2005, 54(5): 2118-2122.
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN. RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica,
2001, 50(12): 2434-2438.
doi: 10.7498/aps.50.2434
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