| [1] |
Huang Ze-Xin, Sheng Zong-Qiang, Cheng Le-Le, Cao San-Zhu, Chen Hua-Jun, Wu Hong-Wei. Steering non-Hermitian skin states by engineering interface in 1D nonreciprocal acoustic crystal. Acta Physica Sinica,
2024, 73(21): 214301.
doi: 10.7498/aps.73.20241087
|
| [2] |
Gao Hui-Fen, Zhou Xiao-Fang, Huang Xue-Qin. Zak phase induced interface states in two-dimensional phononic crystals. Acta Physica Sinica,
2022, 71(4): 044301.
doi: 10.7498/aps.71.20211642
|
| [3] |
Zhang Hong, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Gu Zhao-Qiao, Liu Yi-Tian, Ju An-An, Ouyang Xiao-Ping. Transport process and energy loss of heavy ions in silicon carbide. Acta Physica Sinica,
2021, 70(16): 162401.
doi: 10.7498/aps.70.20210503
|
| [4] |
. Zak phase induces interface states in two-dimensional phononic crystals. Acta Physica Sinica,
2021, (): .
doi: 10.7498/aps.70.20211642
|
| [5] |
Lu Yuan-Yuan, Lu Gui-Hua, Zhou Heng-Wei, Huang Yi-Neng. Preparation and properties of spodumene/silicon carbide composite ceramic materials. Acta Physica Sinica,
2020, 69(11): 117701.
doi: 10.7498/aps.69.20200232
|
| [6] |
Shen Shuai-Shuai, He Chao-Hui, Li Yong-Hong. Non-ionization energy loss of proton in different regions in SiC. Acta Physica Sinica,
2018, 67(18): 182401.
doi: 10.7498/aps.67.20181095
|
| [7] |
Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong. Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica,
2018, 67(17): 178501.
doi: 10.7498/aps.67.20180474
|
| [8] |
Wang Qing-Hai, Li Feng, Huang Xue-Qin, Lu Jiu-Yang, Liu Zheng-You. The topological phase transition and the tunable interface states in granular crystal. Acta Physica Sinica,
2017, 66(22): 224502.
doi: 10.7498/aps.66.224502
|
| [9] |
Jia Zi-Yuan, Yang Yu-Ting, Ji Li-Yu, Hang Zhi-Hong. Deterministic interface states in photonic crystal with graphene-allotrope-like complex unit cells. Acta Physica Sinica,
2017, 66(22): 227802.
doi: 10.7498/aps.66.227802
|
| [10] |
Fang Chao, Liu Ma-Lin. The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica,
2012, 61(9): 097802.
doi: 10.7498/aps.61.097802
|
| [11] |
Zhou Nai-Gen, Hong Tao, Zhou Lang. A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica,
2012, 61(2): 028101.
doi: 10.7498/aps.61.028101
|
| [12] |
Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang. Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor. Acta Physica Sinica,
2012, 61(17): 177201.
doi: 10.7498/aps.61.177201
|
| [13] |
Chen Shun-Sheng, Yang Chang-Ping, Xiao Hai-Bo, Xu Ling-Fang, Ma Chang. Effect of doping concentration on electric-pulse- induced resistance in Nd1-xSrxMnO3 ceramics. Acta Physica Sinica,
2012, 61(14): 147301.
doi: 10.7498/aps.61.147301
|
| [14] |
Zhang Lin, Han Chao, Ma Yong-Ji, Zhang Yi-Men, Zhang Yu-Ming. Gamma-ray radiation effect on Ni/4H-SiC SBD. Acta Physica Sinica,
2009, 58(4): 2737-2741.
doi: 10.7498/aps.58.2737
|
| [15] |
Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica,
2008, 57(9): 6007-6012.
doi: 10.7498/aps.57.6007
|
| [16] |
Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming, Che Yong, Wang Yue-Hu, Chen Liang. The extraction method for trap parameters in 4H-SiC MESFETs. Acta Physica Sinica,
2008, 57(5): 2871-2874.
doi: 10.7498/aps.57.2871
|
| [17] |
Nie Hai, Zhang Bo, Tang Xian-Zhong. Electroluminescence of polymer doped small-molecules light-emitting diodes and the effects of doping trap. Acta Physica Sinica,
2007, 56(1): 263-267.
doi: 10.7498/aps.56.263
|
| [18] |
Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia. Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica,
2003, 52(4): 830-833.
doi: 10.7498/aps.52.830
|
| [19] |
ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN. RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica,
2001, 50(12): 2434-2438.
doi: 10.7498/aps.50.2434
|
| [20] |
REN HONG-XIA, HAO YUE, XU DONG-GANG. STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica,
2000, 49(7): 1241-1248.
doi: 10.7498/aps.49.1241
|
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