Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate

Shang Huai-Chao; Liu Hong-Xia; Zhuo Qing-Qing

doi:10.7498/aps.61.246101

Abstract

The total dose effect of 0.8 μm SOI NMOS device with H-gate is analyzed. The device is exposed to 60Co γ-ray at low dose rate. The result shows that the irradiation effect is more serious at low dose rate for the same total irradiation dose. The threshold voltage shift in on state is lower than in off state. Irradiation leads to the increased drain voltage VD of kink effect. Because the number of effective interface traps varies with gate bias, interface trap has different influences on sub-threshold slope and transconductance.

Keywords:

Authors and contacts

1.
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076097, 60976068, 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China Program (Grant No. 708083), and the Central university basic research and operating expenses of special funding (Grant No. 20110203110012).

References

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Cited By

[1]	Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Fleetwood D M, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
[2]	Adell P C, Barnaby H J, Schrimpf R D, Vermeir B 2007 IEEE Trans. Nucl. Sci. 54 2174
[3]	Liu Z L, Hu Z X, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 60 116013]
[4]	Jun B, Fleetwood D M, Schrimpf R D, Zhou X, Montes E J, Cristoloveanu S 2003 IEEE Trans. Nucl. Sci. 50 1891
[5]	Flament O, Torres A, Ferlet-Cavrois V 2003 IEEE Trans. Nucl. Sci. 50 2316
[6]	Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, V Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1842
[7]	Torres A, Flament O 2002 IEEE Trans. Nucl. Sci.49 1462
[8]	Huang R, Zhang G Y, Li Y X, Zhang X 2005 SOI CMOS Technology and Its Application (Beijing: Science Press) p179 (in Chinese) [黄如, 张国艳, 李映雪, 张兴 2005 SOI CMOS 技术及其应用 (北京: 科学出版社) 第179页]
[9]	Saks N S, Klein R B, Griscom D L 1988 IEEE Trans. Nucl. Sci. 35 1234

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Catalog

Vol. 61, Issue 24 - 2012-12-20

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