Influence of channel length on PD SOI PMOS devices under total dose irradiation

Liu Hong-Xia; Wang Zhi; Zhuo Qing-Qing; Wang Qian-Qiong

doi:10.7498/aps.63.016102

Abstract

This paper mainly investigates the total dose irradiation effects on 0.8 μm PD SOI PMOS devices which are exposed to 60Co γ-rays at a dose rate of 50 rad(Si)/s. The channel length dependence of SOI PMOS devices at total dose irradiation is investigated. The result shows that the threshold voltage shift is only a little larger for shorter channel devices at the same total dose. However, the degradation of maximum transconductance for shorter channel devices is more significant. We found that the oxide-trapped charge is the main factor impacting the threshold drift. We may conclude that a short channel device can produce more interface trapped charges by using the subthreshold separation technology.

Keywords:

Authors and contacts

1.
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076097, 11235008), and the Fundamental Research Funds for the Central Universities of China (Grant No.20110203110012)

References

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Cited By

[1]	Liu Z L, Hu Z Y, Zhang Z X,Shao H, Chen M, Bi D W, Ning B X, Zou S C 2011 Chin. Phys. B 20 070701
[2]	Adell P C, Barnaby H J, Schrimpf R D, Vermeir B 2007 IEEE Trans. Nucl. Sci. 54 2174
[3]	Shang H C, Liu H X, Zhuo Q Q 2012 Acta Phys. Sin. 61 246101 (in Chinese) [商怀超, 刘红侠, 卓青青 2012 61 246101]
[4]	Zheng Z S, Liu Z L, Yu F, Li N 2012 Chin. Phys. B 21 116104
[5]	Peng L, Zhuo Q Q, Liu H X, Cai H M 2012 Acta Phys. Sin. 61 240703(in Chinese) [彭里,卓青青,刘红侠,蔡惠民 2012 61 240703]
[6]	Djezzar B, Smatti A, Amrouche A, Kechouane M 2000 IEEE Trans. Nucl. Sci. 47 1872
[7]	Schrankler J W, Reich R K, Holt M S, Ju D H, Huang T J S, Kirchner G D 1985 IEEE Trans. Nucl. Sci. 32 3988
[8]	Esqueda I S, Barnaby H J, McLatin M L, Adell P C, Mamouni F E, Dixit S K, Schrimpf R D, Xiong W 2009 IEEE Trans. Nucl. Sci. 56 2247
[9]	Schwank J R, Shaneyfelt W R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrios V 2008 IEEE Trans. Nucl. Sci. 55 1833
[10]	Chen W, Balasinski A, Ma T P 1991 IEEE Trans. Nucl. Sci. 38 1126
[11]	Balasinski A, Ma T P 1992 IEEE Trans. Nucl. Sci. 39 2000
[12]	Chin M R, Ma T P 1983 Appl. Phys. Lett. 42 883

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Vol. 63, Issue 1 - 2014-01-05

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