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Ionizing radiation effects in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) at different dose rates were investigated. Experimental results show that the base current increases with increasing accumulated dose for the high and low dose rates of irradiation, causing a significant drop in current gain. Besides, the lower the dose rate, the higher the radiation damage, which demonstrates a significantly enhanced low-date-rate sensitivity (ELDRS) effect in the SiGe HBTs. The different degradation behaviors for high and low dose rates of irradiation are compared with each other and discussed; furthermore, the underlying physical mechanisms are analyzed and investigated in detail.
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Keywords:
- silicon-germanium heterojunction bipolar transistor /
- enhanced low dose rate sensitivity /
- irradiation effect
[1] Cressler J D, NIU, G F 2003 Silicon-germanium heterojunction bipolar transistors (Norwood: Artech House)
[2] Babcockt J A, Cressler J D, Vempati L S, Clark S D, Jaeger R C, Haramet D L 1995 IEEE Trans. Nucl. Sci. 42 1558
[3] Li X J, Lan M J, Liu M C, Yang J Q, Sun Z L, Xiao L Y, He S Y 2013 Acta Phys. Sin. 62 098503 (in Chinese) [李兴冀, 兰慕杰, 刘超铭, 杨剑群, 孙中亮, 肖立伊, 何世禹 2013 62 098053]
[4] Jiang N Y, Ma Z Q, Ma P X, Racanelli M 2006 IEEE Trans. Nucl. Sci. 53 2361
[5] Díez S, Lozano M, Pellegrini G, Campabadal F, Mandic’I, Knoll D, Heinemann B, Ullán M 2009 IEEE Trans. Nucl. Sci. 56 1931
[6] Hu T L, Lu W, Xi S B, Guo Q, He C F, Wu X, Wang X 2013 Acta Phys. Sin. 62 076105 (in Chinese) [胡天乐, 陆妩, 席善斌, 郭旗, 何承发, 吴雪, 王信 2013 62 076105]
[7] Diestelhorst R M, Finn S, Jun B, Sutton A K, Cheng P, Marshall P W, Cressler J D, Schrimpf R D, Fleetwood D M, Gustat H, Heinemann B, Fischer G G, Knoll D, Tillack B 2007 IEEE Trans. Nucl. Sci. 54 2190
[8] Gao B, Liu G, Wang L X, Han Z S, Zheng Y F, Wang C L, Wen J C 2012 Acta Phys. Sin. 61 176107 (in Chinese) [高博, 刘刚, 王立新, 韩郑生, 郑彦飞, 王春林, 温景超 2012 61 176107]
[9] Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Bi D W, Chen M, Zou S C 2012 Acta Phys. Sin. 61 050702 (in Chinese) [胡志远, 刘张李, 邵华, 张正选, 宁冰旭, 毕大炜, 陈明, 邹世昌 2012 61 050702]
[10] MIL-STD-883G 2006 Ionizing radiation (Total Dose) test procedure, Method 1019.7 [S]
[11] Banerjeet G, Niu G, Cressler J D, Clark S D, Palmer M J, Ahlgren D C 1999 IEEE Trans. Nucl. Sci. 46 1620
[12] Hjalmarson H P, Pease R L, Hembree C E, Van Ginhoven R M, Schultz P A 2006 Nucl. Instr. Meth. B 250 269
[13] Stesmansa A 2006 Joural of Applied Physics 88 489
[14] Zhang S, Cressler J D, Niu G, Marshall C J, Marshall P W, Kim H S, Reed R A, Palmer M J, Joseph A J, Harame D L 2003 Solid-State Electron. 47 1729
[15] Witczak S C, Schrimpf R D, Fleetwood D M, Galloway K F, Lacoel R C, Mayer D C, Puh1 J M, Pease R L, Suehle J S 1997 IEEE Trans. Nucl. Sci. 44 1989
[16] Tsetseris L, Schrimpf R D, Fleetwood D M, Pease R L, Pantelides S T 2005 IEEE Trans. Nucl. Sci. 52 2265
[17] Benedetto J M, Boesch H E 1986 IEEE Trans. Nucl. Sci. 33 1318
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[1] Cressler J D, NIU, G F 2003 Silicon-germanium heterojunction bipolar transistors (Norwood: Artech House)
[2] Babcockt J A, Cressler J D, Vempati L S, Clark S D, Jaeger R C, Haramet D L 1995 IEEE Trans. Nucl. Sci. 42 1558
[3] Li X J, Lan M J, Liu M C, Yang J Q, Sun Z L, Xiao L Y, He S Y 2013 Acta Phys. Sin. 62 098503 (in Chinese) [李兴冀, 兰慕杰, 刘超铭, 杨剑群, 孙中亮, 肖立伊, 何世禹 2013 62 098053]
[4] Jiang N Y, Ma Z Q, Ma P X, Racanelli M 2006 IEEE Trans. Nucl. Sci. 53 2361
[5] Díez S, Lozano M, Pellegrini G, Campabadal F, Mandic’I, Knoll D, Heinemann B, Ullán M 2009 IEEE Trans. Nucl. Sci. 56 1931
[6] Hu T L, Lu W, Xi S B, Guo Q, He C F, Wu X, Wang X 2013 Acta Phys. Sin. 62 076105 (in Chinese) [胡天乐, 陆妩, 席善斌, 郭旗, 何承发, 吴雪, 王信 2013 62 076105]
[7] Diestelhorst R M, Finn S, Jun B, Sutton A K, Cheng P, Marshall P W, Cressler J D, Schrimpf R D, Fleetwood D M, Gustat H, Heinemann B, Fischer G G, Knoll D, Tillack B 2007 IEEE Trans. Nucl. Sci. 54 2190
[8] Gao B, Liu G, Wang L X, Han Z S, Zheng Y F, Wang C L, Wen J C 2012 Acta Phys. Sin. 61 176107 (in Chinese) [高博, 刘刚, 王立新, 韩郑生, 郑彦飞, 王春林, 温景超 2012 61 176107]
[9] Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Bi D W, Chen M, Zou S C 2012 Acta Phys. Sin. 61 050702 (in Chinese) [胡志远, 刘张李, 邵华, 张正选, 宁冰旭, 毕大炜, 陈明, 邹世昌 2012 61 050702]
[10] MIL-STD-883G 2006 Ionizing radiation (Total Dose) test procedure, Method 1019.7 [S]
[11] Banerjeet G, Niu G, Cressler J D, Clark S D, Palmer M J, Ahlgren D C 1999 IEEE Trans. Nucl. Sci. 46 1620
[12] Hjalmarson H P, Pease R L, Hembree C E, Van Ginhoven R M, Schultz P A 2006 Nucl. Instr. Meth. B 250 269
[13] Stesmansa A 2006 Joural of Applied Physics 88 489
[14] Zhang S, Cressler J D, Niu G, Marshall C J, Marshall P W, Kim H S, Reed R A, Palmer M J, Joseph A J, Harame D L 2003 Solid-State Electron. 47 1729
[15] Witczak S C, Schrimpf R D, Fleetwood D M, Galloway K F, Lacoel R C, Mayer D C, Puh1 J M, Pease R L, Suehle J S 1997 IEEE Trans. Nucl. Sci. 44 1989
[16] Tsetseris L, Schrimpf R D, Fleetwood D M, Pease R L, Pantelides S T 2005 IEEE Trans. Nucl. Sci. 52 2265
[17] Benedetto J M, Boesch H E 1986 IEEE Trans. Nucl. Sci. 33 1318
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