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对于相同制作工艺的NPN锗硅异质结双极晶体管(SiGe HBT), 在不同辐照剂量率下进行60Co γ射线的辐照效应与退火特性的研究. 测量结果表明, 两种辐照剂量率下, 随着辐照总剂量增加, 晶体管基极电流增大, 共发射极电流放大倍数降低, 且器件的辐照损伤、性能退化与辐照剂量率相关, 低剂量率下辐照损伤较高剂量率严重. 在经过与低剂量率辐照等时的退火后, 高剂量率下的辐照损伤仍较低剂量率下的损伤低, 即待测SiGeHBT具有明显的低剂量率损伤增强效应(ELDRS). 本文对相关的物理机理进行了探讨分析.
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关键词:
- 锗硅异质结双极晶体管 /
- 低剂量率辐照损伤增强 /
- 辐照效应
Ionizing radiation effects in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) at different dose rates were investigated. Experimental results show that the base current increases with increasing accumulated dose for the high and low dose rates of irradiation, causing a significant drop in current gain. Besides, the lower the dose rate, the higher the radiation damage, which demonstrates a significantly enhanced low-date-rate sensitivity (ELDRS) effect in the SiGe HBTs. The different degradation behaviors for high and low dose rates of irradiation are compared with each other and discussed; furthermore, the underlying physical mechanisms are analyzed and investigated in detail.-
Keywords:
- silicon-germanium heterojunction bipolar transistor /
- enhanced low dose rate sensitivity /
- irradiation effect
[1] Cressler J D, NIU, G F 2003 Silicon-germanium heterojunction bipolar transistors (Norwood: Artech House)
[2] Babcockt J A, Cressler J D, Vempati L S, Clark S D, Jaeger R C, Haramet D L 1995 IEEE Trans. Nucl. Sci. 42 1558
[3] Li X J, Lan M J, Liu M C, Yang J Q, Sun Z L, Xiao L Y, He S Y 2013 Acta Phys. Sin. 62 098503 (in Chinese) [李兴冀, 兰慕杰, 刘超铭, 杨剑群, 孙中亮, 肖立伊, 何世禹 2013 62 098053]
[4] Jiang N Y, Ma Z Q, Ma P X, Racanelli M 2006 IEEE Trans. Nucl. Sci. 53 2361
[5] Díez S, Lozano M, Pellegrini G, Campabadal F, Mandic’I, Knoll D, Heinemann B, Ullán M 2009 IEEE Trans. Nucl. Sci. 56 1931
[6] Hu T L, Lu W, Xi S B, Guo Q, He C F, Wu X, Wang X 2013 Acta Phys. Sin. 62 076105 (in Chinese) [胡天乐, 陆妩, 席善斌, 郭旗, 何承发, 吴雪, 王信 2013 62 076105]
[7] Diestelhorst R M, Finn S, Jun B, Sutton A K, Cheng P, Marshall P W, Cressler J D, Schrimpf R D, Fleetwood D M, Gustat H, Heinemann B, Fischer G G, Knoll D, Tillack B 2007 IEEE Trans. Nucl. Sci. 54 2190
[8] Gao B, Liu G, Wang L X, Han Z S, Zheng Y F, Wang C L, Wen J C 2012 Acta Phys. Sin. 61 176107 (in Chinese) [高博, 刘刚, 王立新, 韩郑生, 郑彦飞, 王春林, 温景超 2012 61 176107]
[9] Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Bi D W, Chen M, Zou S C 2012 Acta Phys. Sin. 61 050702 (in Chinese) [胡志远, 刘张李, 邵华, 张正选, 宁冰旭, 毕大炜, 陈明, 邹世昌 2012 61 050702]
[10] MIL-STD-883G 2006 Ionizing radiation (Total Dose) test procedure, Method 1019.7 [S]
[11] Banerjeet G, Niu G, Cressler J D, Clark S D, Palmer M J, Ahlgren D C 1999 IEEE Trans. Nucl. Sci. 46 1620
[12] Hjalmarson H P, Pease R L, Hembree C E, Van Ginhoven R M, Schultz P A 2006 Nucl. Instr. Meth. B 250 269
[13] Stesmansa A 2006 Joural of Applied Physics 88 489
[14] Zhang S, Cressler J D, Niu G, Marshall C J, Marshall P W, Kim H S, Reed R A, Palmer M J, Joseph A J, Harame D L 2003 Solid-State Electron. 47 1729
[15] Witczak S C, Schrimpf R D, Fleetwood D M, Galloway K F, Lacoel R C, Mayer D C, Puh1 J M, Pease R L, Suehle J S 1997 IEEE Trans. Nucl. Sci. 44 1989
[16] Tsetseris L, Schrimpf R D, Fleetwood D M, Pease R L, Pantelides S T 2005 IEEE Trans. Nucl. Sci. 52 2265
[17] Benedetto J M, Boesch H E 1986 IEEE Trans. Nucl. Sci. 33 1318
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[1] Cressler J D, NIU, G F 2003 Silicon-germanium heterojunction bipolar transistors (Norwood: Artech House)
[2] Babcockt J A, Cressler J D, Vempati L S, Clark S D, Jaeger R C, Haramet D L 1995 IEEE Trans. Nucl. Sci. 42 1558
[3] Li X J, Lan M J, Liu M C, Yang J Q, Sun Z L, Xiao L Y, He S Y 2013 Acta Phys. Sin. 62 098503 (in Chinese) [李兴冀, 兰慕杰, 刘超铭, 杨剑群, 孙中亮, 肖立伊, 何世禹 2013 62 098053]
[4] Jiang N Y, Ma Z Q, Ma P X, Racanelli M 2006 IEEE Trans. Nucl. Sci. 53 2361
[5] Díez S, Lozano M, Pellegrini G, Campabadal F, Mandic’I, Knoll D, Heinemann B, Ullán M 2009 IEEE Trans. Nucl. Sci. 56 1931
[6] Hu T L, Lu W, Xi S B, Guo Q, He C F, Wu X, Wang X 2013 Acta Phys. Sin. 62 076105 (in Chinese) [胡天乐, 陆妩, 席善斌, 郭旗, 何承发, 吴雪, 王信 2013 62 076105]
[7] Diestelhorst R M, Finn S, Jun B, Sutton A K, Cheng P, Marshall P W, Cressler J D, Schrimpf R D, Fleetwood D M, Gustat H, Heinemann B, Fischer G G, Knoll D, Tillack B 2007 IEEE Trans. Nucl. Sci. 54 2190
[8] Gao B, Liu G, Wang L X, Han Z S, Zheng Y F, Wang C L, Wen J C 2012 Acta Phys. Sin. 61 176107 (in Chinese) [高博, 刘刚, 王立新, 韩郑生, 郑彦飞, 王春林, 温景超 2012 61 176107]
[9] Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Bi D W, Chen M, Zou S C 2012 Acta Phys. Sin. 61 050702 (in Chinese) [胡志远, 刘张李, 邵华, 张正选, 宁冰旭, 毕大炜, 陈明, 邹世昌 2012 61 050702]
[10] MIL-STD-883G 2006 Ionizing radiation (Total Dose) test procedure, Method 1019.7 [S]
[11] Banerjeet G, Niu G, Cressler J D, Clark S D, Palmer M J, Ahlgren D C 1999 IEEE Trans. Nucl. Sci. 46 1620
[12] Hjalmarson H P, Pease R L, Hembree C E, Van Ginhoven R M, Schultz P A 2006 Nucl. Instr. Meth. B 250 269
[13] Stesmansa A 2006 Joural of Applied Physics 88 489
[14] Zhang S, Cressler J D, Niu G, Marshall C J, Marshall P W, Kim H S, Reed R A, Palmer M J, Joseph A J, Harame D L 2003 Solid-State Electron. 47 1729
[15] Witczak S C, Schrimpf R D, Fleetwood D M, Galloway K F, Lacoel R C, Mayer D C, Puh1 J M, Pease R L, Suehle J S 1997 IEEE Trans. Nucl. Sci. 44 1989
[16] Tsetseris L, Schrimpf R D, Fleetwood D M, Pease R L, Pantelides S T 2005 IEEE Trans. Nucl. Sci. 52 2265
[17] Benedetto J M, Boesch H E 1986 IEEE Trans. Nucl. Sci. 33 1318
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