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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica,
2020, 69(4): 047201.
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Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica,
2016, 65(3): 038402.
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Yang Jian-Qun, Li Xing-Ji, Ma Guo-Liang, Liu Chao-Ming, Zou Meng-Nan. Effect of 170 keV proton irradiation on structure and electrical conductivity of multi-walled carbon nanotubes film. Acta Physica Sinica,
2015, 64(13): 136401.
doi: 10.7498/aps.64.136401
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Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng. Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode. Acta Physica Sinica,
2013, 62(21): 217301.
doi: 10.7498/aps.62.217301
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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica,
2013, 62(11): 117103.
doi: 10.7498/aps.62.117103
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Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun. Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica,
2012, 61(22): 227303.
doi: 10.7498/aps.61.227303
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Chen Jun, Fan Guang-Han, Zhang Yun-Yan. The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica,
2012, 61(17): 178504.
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Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica,
2011, 60(7): 078503.
doi: 10.7498/aps.60.078503
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Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen. Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica,
2011, 60(2): 028503.
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Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analysis of failure mechanism of GaN-based white light-emitting diode. Acta Physica Sinica,
2010, 59(7): 5002-5009.
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Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica,
2010, 59(2): 1268-1274.
doi: 10.7498/aps.59.1268
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica,
2009, 58(10): 7189-7193.
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Zhang Lin, Han Chao, Ma Yong-Ji, Zhang Yi-Men, Zhang Yu-Ming. Gamma-ray radiation effect on Ni/4H-SiC SBD. Acta Physica Sinica,
2009, 58(4): 2737-2741.
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Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan. Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate. Acta Physica Sinica,
2008, 57(5): 3176-3181.
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Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2008, 57(1): 472-476.
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Qiao Hui, Liao Yi, Hu Wei-Da, Deng Yi, Yuan Yong-Gang, Zhang Qin-Yao, Li Xiang-Yang, Gong Hai-Mei. Real-time study of γ irradiation on Hg1-xCdxTe focal plane photodiodes. Acta Physica Sinica,
2008, 57(11): 7088-7093.
doi: 10.7498/aps.57.7088
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Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di. Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2007, 56(10): 6003-6007.
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica,
2006, 55(3): 1424-1429.
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Luo Yi, Guo Wen-Ping, Shao Jia-Ping, Hu Hui, Han Yan-Jun, Xue Song, Wang Lai, Sun Chang-Zheng, Hao Zhi-Biao. A study on wavelength stability of GaN-based blue light emitting diodes. Acta Physica Sinica,
2004, 53(8): 2720-2723.
doi: 10.7498/aps.53.2720
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Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia. RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica,
2003, 52(10): 2558-2562.
doi: 10.7498/aps.52.2558
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